公开(公告)号：US20190067014A1

公开(公告)日：2019-02-28

申请号：US16105761

申请日：2018-08-20

Applicant: ASM IP Holding B.V.

Inventor： Kiran Shrestha ,  Bhushan Zope ,  Shankar Swaminathan ,  Chiyu Zhu ,  Henri Tuomas Antero Jussila ,  Qi Xie

IPC: H01L21/285 ,  H01L21/3213 ,  H01L23/532 ,  C23C16/14 ,  C23C16/455

Abstract: Methods for filling a gap feature on a substrate surface are disclosure. The methods may include: providing a substrate comprising one or more gap features into a reaction chamber; and partially filling the one or more gap features with a molybdenum metal film by a cyclical deposition-etch process, wherein a unit cycle of the cyclical deposition-etch process comprises: partially filling the one or more gap features with a molybdenum metal film by a performing at least one unit cycle of a first cyclical deposition process; and partially etching the molybdenum metal film. The methods may also include: filling the one or more gap features with molybdenum metal film by performing at least one unit cycle of a second cyclical deposition process. Semiconductor device structures including a gap fill molybdenum metal film disposed in one or more gap features in or on a surface of a substrate formed by the methods of the disclosure are also disclosed.

公开(公告)号：US20190043962A1

公开(公告)日：2019-02-07

申请号：US15997520

申请日：2018-06-04

Applicant: ASM IP Holding B.V.

Inventor： Suvi Haukka ,  Michael Givens ,  Eric Shero ,  Jerry Winkler ,  Petri Räisänen ,  Timo Asikainen ,  Chiyu Zhu ,  Jaakko Anttila

IPC: H01L29/49 ,  C23C16/455 ,  H01L21/3205 ,  H01L21/285 ,  C23C16/06 ,  C23C16/34 ,  H01L29/51

Abstract: A process for depositing titanium aluminum or tantalum aluminum thin films comprising nitrogen on a substrate in a reaction space can include at least one deposition cycle. The deposition cycle can include alternately and sequentially contacting the substrate with a vapor phase Ti or Ta precursor and a vapor phase Al precursor. At least one of the vapor phase Ti or Ta precursor and the vapor phase Al precursor may contact the substrate in the presence of a vapor phase nitrogen precursor.

公开(公告)号：US20250154662A1

公开(公告)日：2025-05-15

申请号：US19020594

申请日：2025-01-14

Applicant: ASM IP Holding B.V.

Inventor： Tom E. Blomberg ,  Varun Sharma ,  Suvi Haukka ,  Marko Tuominen ,  Chiyu Zhu

IPC: C23F4/02 ,  C09K13/00 ,  C09K13/08 ,  C09K13/10 ,  C23F1/12 ,  H01J37/32 ,  H01L21/3065 ,  H01L21/311 ,  H01L21/3213

Abstract: Thermal atomic layer etching processes are disclosed. In some embodiments, the methods comprise at least one etch cycle in which the substrate is alternately and sequentially exposed to a first vapor phase halide reactant and a second vapor halide reactant. In some embodiments, the first reactant may comprise an organic halide compound. During the thermal ALE cycle, the substrate is not contacted with a plasma reactant.

公开(公告)号：US12237392B2

公开(公告)日：2025-02-25

申请号：US17465127

申请日：2021-09-02

Applicant: ASM IP Holding B.V.

Inventor： Suvi Haukka ,  Michael Givens ,  Eric Shero ,  Jerry Winkler ,  Petri Räisänen ,  Timo Asikainen ,  Chiyu Zhu ,  Jaakko Anttila

IPC: H01L29/49 ,  C23C16/06 ,  C23C16/34 ,  C23C16/455 ,  H01L21/28 ,  H01L21/285 ,  H01L21/3205 ,  H01L29/51

Abstract: A process for depositing titanium aluminum or tantalum aluminum thin films comprising nitrogen on a substrate in a reaction space can include at least one deposition cycle. The deposition cycle can include alternately and sequentially contacting the substrate with a vapor phase Ti or Ta precursor and a vapor phase Al precursor. At least one of the vapor phase Ti or Ta precursor and the vapor phase Al precursor may contact the substrate in the presence of a vapor phase nitrogen precursor.

公开(公告)号：US20250037970A1

公开(公告)日：2025-01-30

申请号：US18790894

申请日：2024-07-31

Applicant: ASM IP Holding B.V.

Inventor： Tom E. Blomberg ,  Varun Sharma ,  Suvi P. Haukka ,  Marko Tuominen ,  Chiyu Zhu

IPC: H01J37/32 ,  C23F1/12 ,  C23G5/00 ,  H01L21/311 ,  H01L21/3213

Abstract: Atomic layer etching (ALE) processes are disclosed. In some embodiments, the methods comprise at least one etch cycle in which the substrate is alternately and sequentially exposed to a first vapor phase non-metal halide reactant and a second vapor phase halide reactant. In some embodiments both the first and second reactants are chloride reactants. In some embodiments the first reactant is fluorinating gas and the second reactant is a chlorinating gas. In some embodiments a thermal ALE cycle is used in which the substrate is not contacted with a plasma reactant.

公开(公告)号：US20240429055A1

公开(公告)日：2024-12-26

申请号：US18822710

申请日：2024-09-03

Applicant: ASM IP Holding B.V.

Inventor： Chiyu Zhu ,  Henri Jussila ,  Qi Xie

IPC: H01L21/285 ,  C23C16/02 ,  C23C16/04 ,  C23C16/455 ,  H01L21/768

Abstract: There is provided a method of selectively depositing a material on a substrate with a first and second surface, the first surface being different than the second surface. The depositing of the material on the substrate comprises: supplying a bulk precursor comprising metal atoms, halogen atoms and at least one additional atom not being a metal or halogen atom to the substrate; and supplying a reactant to the substrate. The bulk precursor and the reactant have a reaction with the first surface relative to the second surface to form more material on the first surface than on the second surface.

公开(公告)号：US11854876B2

公开(公告)日：2023-12-26

申请号：US17110709

申请日：2020-12-03

Applicant: ASM IP Holding B.V.

Inventor： Chiyu Zhu ,  Shinya Iwashita ,  Jan Willem Maes ,  Jiyeon Kim

IPC: H01L21/768 ,  H01L21/67 ,  C23C16/46 ,  C23C16/455 ,  C23C16/34 ,  C23C16/06 ,  C23C16/52

CPC classification number: H01L21/76876 ,  C23C16/06 ,  C23C16/34 ,  C23C16/45546 ,  C23C16/463 ,  C23C16/52 ,  H01L21/67167 ,  H01L21/76864

Abstract: Systems and methods are described for depositing a TiN liner layer and a cobalt seed layer on a semiconductor wafer in a cobalt metallization process. In some embodiments the wafer is cooled after deposition of the TiN liner layer and/or the cobalt seed layer. In some embodiments the TiN liner layer and cobalt seed layer are deposited in process modules that are part of a semiconductor processing apparatus that also includes one or more modules for cooling the substrate. In some embodiments the cobalt seed layer may comprise a mixture of TiN and cobalt, a nanolaminate of TiN and cobalt layers or a graded TiN/Co layer.

公开(公告)号：US20230352556A1

公开(公告)日：2023-11-02

申请号：US18217739

申请日：2023-07-03

Applicant: ASM IP Holding B.V.

Inventor： Chiyu Zhu ,  Kiran Shrestha ,  Petri Raisanen ,  Michael Eugene Givens

IPC: H01L29/51 ,  H01L21/02 ,  H01L21/28 ,  H01L29/66 ,  C23C16/455 ,  H01L29/49 ,  C23C16/34

CPC classification number: H01L29/517 ,  H01L21/0228 ,  H01L21/28194 ,  H01L21/02205 ,  H01L21/02175 ,  H01L29/66568 ,  C23C16/45525 ,  H01L29/4966 ,  C23C16/34

Abstract: Methods for forming a semiconductor device structure are provided. The methods may include forming a molybdenum nitride film on a substrate by atomic layer deposition by contacting the substrate with a first vapor phase reactant comprising a molybdenum halide precursor, contacting the substrate with a second vapor phase reactant comprise a nitrogen precursor, and contacting the substrate with a third vapor phase reactant comprising a reducing precursor. The methods provided may also include forming a gate electrode structure comprising the molybdenum nitride film, the gate electrode structure having an effective work function greater than approximately 5.0 eV. Semiconductor device structures including molybdenum nitride films are also provided.

公开(公告)号：US11749562B2

公开(公告)日：2023-09-05

申请号：US17379240

申请日：2021-07-19

Applicant: ASM IP Holding B.V.

Inventor： Chiyu Zhu

IPC: H01L21/76 ,  H01L21/768 ,  H01L21/02

CPC classification number: H01L21/7682 ,  H01L21/0228 ,  H01L21/02164 ,  H01L21/02167 ,  H01L21/02175 ,  H01L21/02271 ,  H01L21/76832

Abstract: A method for depositing a film to form an air gap within a semiconductor device is disclosed. An exemplary method comprises pulsing a metal halide precursor onto the substrate and pulsing an oxygen precursor onto a selective deposition surface. The method can be used to form an air gap to, for example, reduce a parasitic resistance of the semiconductor device.

公开(公告)号：US11658030B2

公开(公告)日：2023-05-23

申请号：US16713311

申请日：2019-12-13

Applicant: ASM IP Holding B.V.

Inventor： Tom Blomberg ,  Chiyu Zhu

IPC: H01L21/02 ,  H01L21/28 ,  C23C16/40 ,  C23C16/455

CPC classification number: H01L21/02565 ,  C23C16/401 ,  C23C16/407 ,  C23C16/45523 ,  C23C16/45527 ,  H01L21/0228 ,  H01L21/0257 ,  H01L21/0262 ,  H01L21/28194 ,  H01L21/02592

Abstract: Methods for forming a doped metal oxide film on a substrate by cyclical deposition are provided. In some embodiments, methods may include contacting the substrate with a first reactant comprising a metal halide source, contacting the substrate with a second reactant comprising a hydrogenated source and contacting the substrate with a third reactant comprising an oxide source. In some embodiments, related semiconductor device structures may include a doped metal oxide film formed by cyclical deposition processes.