公开(公告)号：US20190333761A1

公开(公告)日：2019-10-31

申请号：US16504861

申请日：2019-07-08

Applicant: ASM IP HOLDING B.V.

Inventor： Eva E. Tois ,  Hidemi Suemori ,  Viljami J. Pore ,  Suvi P. Haukka ,  Varun Sharma

IPC: H01L21/02 ,  H01L21/285 ,  H01L21/768 ,  H01L21/3065 ,  C23C16/56 ,  B05D1/00 ,  C23C16/04 ,  C23C16/455

Abstract: Processes are provided herein for deposition of organic films. Organic films can be deposited, including selective deposition on one surface of a substrate relative to a second surface of the substrate. For example, polymer films may be selectively deposited on a first metallic surface relative to a second dielectric surface. Selectivity, as measured by relative thicknesses on the different layers, of above about 50% or even about 90% is achieved. The selectively deposited organic film may be subjected to an etch process to render the process completely selective. Processes are also provided for particular organic film materials, independent of selectivity.

公开(公告)号：US10373820B2

公开(公告)日：2019-08-06

申请号：US15170769

申请日：2016-06-01

Applicant: ASM IP HOLDING B.V.

Inventor： Eva E. Tois ,  Hidemi Suemori ,  Viljami J. Pore ,  Suvi P. Haukka ,  Varun Sharma

IPC: H01L21/02 ,  H01L21/768 ,  H01L21/3065 ,  H01L21/285 ,  C23C16/04 ,  B05D1/00 ,  C23C16/455 ,  C23C16/56

Abstract: Processes are provided herein for deposition of organic films. Organic films can be deposited, including selective deposition on one surface of a substrate relative to a second surface of the substrate. For example, polymer films may be selectively deposited on a first metallic surface relative to a second dielectric surface. Selectivity, as measured by relative thicknesses on the different layers, of above about 50% or even about 90% is achieved. The selectively deposited organic film may be subjected to an etch process to render the process completely selective. Processes are also provided for particular organic film materials, independent of selectivity.

公开(公告)号：US20190043711A1

公开(公告)日：2019-02-07

申请号：US15996062

申请日：2018-06-01

Applicant: ASM IP Holding B.V.

Inventor： Viljami J. Pore ,  Seiji Okura ,  Hidemi Suemori

IPC: H01L21/02 ,  H01L21/311 ,  C23C16/30 ,  H01L21/033 ,  C23C16/455 ,  H01L21/28

CPC classification number: H01L21/02186 ,  C23C16/308 ,  C23C16/45525 ,  C23C16/45527 ,  C23C16/45531 ,  C23C16/45534 ,  C23C16/45536 ,  C23C16/4554 ,  C23C16/45542 ,  C23C16/45553 ,  H01L21/02249 ,  H01L21/02271 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/0337 ,  H01L21/28202 ,  H01L21/31111

Abstract: A process is provided for depositing a substantially amorphous titanium oxynitride thin film that can be used, for example, in integrated circuit fabrication, such as in forming spacers in a pitch multiplication process. The process comprises contacting the substrate with a titanium reactant and removing excess titanium reactant and reaction byproducts, if any. The substrate is then contacted with a second reactant which comprises reactive species generated by plasma, wherein one of the reactive species comprises nitrogen. The second reactant and reaction byproducts, if any, are removed. The contacting and removing steps are repeated until a titanium oxynitride thin film of desired thickness has been formed.

公开(公告)号：US20180197733A1

公开(公告)日：2018-07-12

申请号：US15707749

申请日：2017-09-18

Applicant: ASM IP Holding B.V.

Inventor： Toshiya Suzuki ,  Viljami J. Pore

IPC: H01L21/02

Abstract: Methods for depositing silicon oxycarbonitride (SiOCN) thin films on a substrate in a reaction space are provided. The methods can include at least one plasma enhanced atomic layer deposition (PEALD) cycle including alternately and sequentially contacting the substrate with a silicon precursor and a second reactant that does not include oxygen. In some embodiments the methods allow for the deposition of SiOCN films having improved acid-based wet etch resistance.

公开(公告)号：US20170323782A1

公开(公告)日：2017-11-09

申请号：US15588026

申请日：2017-05-05

Applicant: ASM IP Holding B.V.

Inventor： Toshiya Suzuki ,  Viljami J. Pore ,  Hannu Huotari

IPC: H01L21/02 ,  C23C16/455 ,  C23C16/32 ,  C23C16/44 ,  C23C16/40

Abstract: Methods for depositing silicon oxycarbide (SiOC) thin films on a substrate in a reaction space are provided. The methods can include at least one plasma enhanced atomic layer deposition (PEALD) cycle including alternately and sequentially contacting the substrate with a silicon precursor that does not comprise nitrogen and a second reactant that does not include oxygen. In some embodiments the methods allow for the deposition of SiOC films having improved acid-based wet etch resistance.

公开(公告)号：US20170140925A1

公开(公告)日：2017-05-18

申请号：US15342943

申请日：2016-11-03

Applicant: ASM IP Holding B.V.

Inventor： Toshiya Suzuki ,  Viljami J. Pore

IPC: H01L21/02 ,  H01L21/311

CPC classification number: H01L21/02126 ,  H01L21/02216 ,  H01L21/02219 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/0337 ,  H01L21/31105 ,  H01L21/31111

Abstract: Methods for depositing silicon oxycarbonitride (SiOCN) thin films on a substrate in a reaction space are provided. The methods can include at least one plasma enhanced atomic layer deposition (PEALD) cycle including alternately and sequentially contacting the substrate with a silicon precursor and a second reactant that does not include oxygen. In some embodiments the methods allow for the deposition of SiOCN films having improved acid-based wet etch resistance.

公开(公告)号：US20170100743A1

公开(公告)日：2017-04-13

申请号：US15070594

申请日：2016-03-15

Applicant: ASM IP HOLDING B.V.

Inventor： Viljami J. Pore ,  Marko Tuominen ,  Hannu Huotari

IPC: B05D1/00

CPC classification number: B05D1/60 ,  B05D1/36 ,  B05D3/145 ,  B05D2505/50 ,  C23C16/30 ,  C23C16/45523 ,  C23C16/45525 ,  H01L21/02118 ,  H01L21/02271 ,  H01L21/0228 ,  H01L21/0234

Abstract: Methods and apparatus for vapor deposition of an organic film are configured to vaporize an organic reactant at a first temperature, transport the vapor to a reaction chamber housing a substrate, and maintain the substrate at a lower temperature than the vaporization temperature. Alternating contact of the substrate with the organic reactant and a second reactant in a sequential deposition sequence can result in bottom-up filling of voids and trenches with organic film in a manner otherwise difficult to achieve. Deposition reactors conducive to depositing organic films are provided.

公开(公告)号：US09523148B1

公开(公告)日：2016-12-20

申请号：US14835465

申请日：2015-08-25

Applicant: ASM IP Holding B.V.

Inventor： Viljami J. Pore ,  Seiji Okura ,  Hidemi Suemori

IPC: C23C16/30 ,  H01L21/02 ,  H01L21/311 ,  C23C16/455 ,  H01L21/28

CPC classification number: H01L21/02186 ,  C23C16/308 ,  C23C16/45525 ,  C23C16/45527 ,  C23C16/45531 ,  C23C16/45534 ,  C23C16/45536 ,  C23C16/4554 ,  C23C16/45542 ,  C23C16/45553 ,  H01L21/02249 ,  H01L21/02271 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/0337 ,  H01L21/28202 ,  H01L21/31111

Abstract: A process is provided for depositing a substantially amorphous titanium oxynitride thin film that can be used, for example, in integrated circuit fabrication, such as in forming spacers in a pitch multiplication process. The process comprises contacting the substrate with a titanium reactant and removing excess titanium reactant and reaction byproducts, if any. The substrate is then contacted with a second reactant which comprises reactive species generated by plasma, wherein one of the reactive species comprises nitrogen. The second reactant and reaction byproducts, if any, are removed. The contacting and removing steps are repeated until a titanium oxynitride thin film of desired thickness has been formed.

Abstract translation: 提供了用于沉积可用于例如集成电路制造中的基本上无定形的氮氧化钛薄膜的方法，例如在间距倍增过程中形成间隔物。 该方法包括使底物与钛反应物接触并除去过量的钛反应物和反应副产物（如果有的话）。 然后将衬底与包含由等离子体产生的反应物质的第二反应物接触，其中一个反应性物质包含氮。 第二反应物和反应副产物（如果有的话）被除去。 重复接触和除去步骤，直至形成所需厚度的氮氧化钛薄膜。

公开(公告)号：US20150217330A1

公开(公告)日：2015-08-06

申请号：US14612784

申请日：2015-02-03

Applicant: ASM IP Holding B.V.

Inventor： Suvi P. Haukka ,  Raija H. Matero ,  Eva Tois ,  Antti Niskanen ,  Marko Tuominen ,  Hannu Huotari ,  Viljami J. Pore ,  Ivo Raaijmakers

IPC: B05D3/10 ,  C23C26/00

CPC classification number: B05D3/107 ,  C23C16/02 ,  C23C16/045 ,  C23C16/14 ,  C23C16/18 ,  C23C16/28 ,  C23C16/40 ,  C23C16/402 ,  C23C16/403 ,  C23C18/06 ,  C23C18/1208 ,  C23C18/1212 ,  C23C18/1216 ,  C23C18/122 ,  C23C18/1225 ,  C23C18/1245

Abstract: Methods are provided for selectively depositing a material on a first surface of a substrate relative to a second, different surface of the substrate. The selectively deposited material can be, for example, a metal, metal oxide, or dielectric material.

Abstract translation: 提供了用于相对于基板的第二不同表面在基板的第一表面上选择性地沉积材料的方法。 选择性沉积的材料可以是例如金属，金属氧化物或介电材料。

公开(公告)号：US12134108B2

公开(公告)日：2024-11-05

申请号：US18300748

申请日：2023-04-14

Applicant: ASM IP HOLDING B.V.

Inventor： Viljami J. Pore ,  Marko Tuominen ,  Hannu Huotari

IPC: C23C16/455 ,  B05D1/00 ,  H10K71/16

Abstract: Methods and apparatus for vapor deposition of an organic film are configured to vaporize an organic reactant at a first temperature, transport the vapor to a reaction chamber housing a substrate, and maintain the substrate at a lower temperature than the vaporization temperature. Alternating contact of the substrate with the organic reactant and a second reactant in a sequential deposition sequence can result in bottom-up filling of voids and trenches with organic film in a manner otherwise difficult to achieve.