公开(公告)号：US20220260917A1

公开(公告)日：2022-08-18

申请号：US17176108

申请日：2021-02-15

Applicant: Applied Materials, Inc.

Inventor： Douglas A. BUCHBERGER, JR. ,  Dmitry LUBOMIRSKY ,  John O. DUKOVIC ,  Srinivas D. NEMANI

IPC: G03F7/38

Abstract: A method and apparatus for applying an electric field and/or a magnetic field to a photoresist layer without air gap intervention during photolithography processes is provided herein. The method and apparatus include an electrode assembly and a base assembly. The electrode assembly includes a permeable electrode. The base assembly includes one or more process fluid channels disposed around a circumference of the substrate support surface and configured to fill a process volume with a process fluid. The electrode assembly is configured to apply an electric field to a substrate disposed within the process volume.

公开(公告)号：US20210193461A1

公开(公告)日：2021-06-24

申请号：US17192882

申请日：2021-03-04

Applicant: Applied Materials, Inc.

Inventor： Bhargav S. CITLA ,  Mei-Yee SHEK ,  Srinivas D. NEMANI

IPC: H01L21/02 ,  C23C14/02 ,  C23C14/06 ,  H01L21/033 ,  C23C14/35

Abstract: Embodiments described herein provide for post deposition anneal of a substrate, having an amorphous carbon layer deposited thereon, to desirably reduce variations in local stresses thereacross. In one embodiment, a method of processing a substrate includes positioning a substrate, having an amorphous carbon layer deposited thereon, in a first processing volume, flowing an anneal gas into the first processing volume, heating the substrate to an anneal temperature of not more than about 450° C., and maintaining the substrate at the anneal temperature for about 30 seconds or more. Herein, the amorphous carbon layer was deposited on the substrate using a method which included positioning the substrate on a substrate support disposed in a second processing volume, flowing a processing gas into the second processing volume, applying pulsed DC power to a carbon target disposed in the second processing volume, forming a plasma of the processing gas, and depositing the amorphous carbon layer on the substrate.

公开(公告)号：US20200343103A1

公开(公告)日：2020-10-29

申请号：US16926422

申请日：2020-07-10

Applicant: Applied Materials, Inc.

Inventor： Adib M. KHAN ,  Qiwei LIANG ,  Sultan MALIK ,  Srinivas D. NEMANI

IPC: H01L21/447 ,  C23C16/452 ,  H01L21/67

Abstract: The present disclosure relates to high pressure processing apparatus for semiconductor processing. The apparatus described herein include a high pressure process chamber and a containment chamber surrounding the process chamber. A high pressure fluid delivery module is in fluid communication with the high pressure process chamber and is configured to deliver a high pressure fluid to the process chamber.

公开(公告)号：US20200303183A1

公开(公告)日：2020-09-24

申请号：US16802290

申请日：2020-02-26

Applicant: Applied Materials, Inc.

Inventor： Christopher AHLES ,  Jong CHOI ,  Andrew C. KUMMEL ,  Keith Tatseun WONG ,  Srinivas D. NEMANI

IPC: H01L21/02 ,  C23C16/455 ,  C23C16/40

Abstract: Methods for depositing a metal containing material formed on a certain material of a substrate using an atomic layer deposition process for semiconductor applications are provided. In one example, a method of forming a metal containing material on a substrate comprises pulsing a first gas precursor comprising a metal containing precursor to a surface of a substrate, pulsing a second gas precursor comprising a carboxylic acid to the surface of the substrate, and forming a metal containing material selectively on a first material of the substrate. In another example, a method of forming a metal containing material on a substrate includes selectively forming a metal containing layer on a silicon material or a metal material on a substrate than on an insulating material on the substrate by an atomic layer deposition process by alternatively supplying a metal containing precursor and a water free precursor to the substrate.

公开(公告)号：US20200185260A1

公开(公告)日：2020-06-11

申请号：US16706115

申请日：2019-12-06

Applicant: Applied Materials, Inc.

Inventor： Sultan MALIK ,  Srinivas D. NEMANI ,  Qiwei LIANG ,  Adib M. KHAN

IPC: H01L21/687 ,  H01L21/673

Abstract: Embodiments of the disclosure relate to an apparatus and method for processing semiconductor substrates. In one embodiment, a processing system is disclosed. The processing system includes an outer chamber that surrounds an inner chamber. The inner chamber includes a substrate support upon which a substrate is positioned during processing. The inner chamber is configured to have an internal volume that, when isolated from an internal volume of the outer chamber, is changeable such that the pressure within the internal volume of the inner chamber may be varied.

公开(公告)号：US20200090946A1

公开(公告)日：2020-03-19

申请号：US16132837

申请日：2018-09-17

Applicant: Applied Materials, Inc.

Inventor： Bhargav S. CITLA ,  Jethro TANNOS ,  Jingyi LI ,  Douglas A. BUCHBERGER, JR. ,  Zhong Qiang HUA ,  Srinivas D. NEMANI ,  Ellie Y. YIEH

IPC: H01L21/311 ,  H01L21/762 ,  H01L21/67 ,  H01L21/3065 ,  H01J37/32

Abstract: Embodiments of the present invention provide an apparatus and methods for depositing a dielectric material using RF bias pulses along with remote plasma source deposition for manufacturing semiconductor devices, particularly for filling openings with high aspect ratios in semiconductor applications. In one embodiment, a method of depositing a dielectric material includes providing a gas mixture into a processing chamber having a substrate disposed therein, forming a remote plasma in a remote plasma source and delivering the remote plasma to an interior processing region defined in the processing chamber, applying a RF bias power to the processing chamber in pulsed mode, and forming a dielectric material in an opening defined in a material layer disposed on the substrate in the presence of the gas mixture and the remote plasma.

公开(公告)号：US20190311896A1

公开(公告)日：2019-10-10

申请号：US16354654

申请日：2019-03-15

Applicant: Applied Materials, Inc.

Inventor： Mihaela BALSEANU ,  Srinivas D. NEMANI ,  Mei-Yee SHEK ,  Ellie Y. YIEH

IPC: H01L21/02 ,  H01L29/66 ,  C23C16/455 ,  C23C16/46 ,  C23C16/34 ,  C23C16/36

Abstract: A method for forming a thermally stable spacer layer is disclosed. The method includes first disposing a substrate in an internal volume of a processing chamber. The substrate has a film formed thereon, the film including silicon, carbon, nitrogen, and hydrogen. Next, high pressure steam is introduced into the processing chamber. The film is exposed to the high pressure steam to convert the film to reacted film, the reacted film including silicon, carbon, oxygen, and hydrogen.

公开(公告)号：US20190187563A1

公开(公告)日：2019-06-20

申请号：US16272962

申请日：2019-02-11

Applicant: Applied Materials, Inc.

Inventor： Viachslav BABAYAN ,  Douglas A. BUCHBERGER, JR. ,  Qiwei LIANG ,  Ludovic GODET ,  Srinivas D. NEMANI ,  Daniel J. WOODRUFF ,  Randy HARRIS ,  Robert B. MOORE

IPC: G03F7/20 ,  G03F7/38 ,  H01L21/687 ,  G03F7/16 ,  G03F7/26

CPC classification number: G03F7/2035 ,  G03F7/168 ,  G03F7/26 ,  G03F7/38 ,  H01L21/68764

Abstract: Embodiments described herein relate to methods and apparatus for performing immersion field guided post exposure bake processes. Embodiments of apparatus described herein include a chamber body defining a processing volume. A pedestal may be disposed within the processing volume and a first electrode may be coupled to the pedestal. A moveable stem may extend through the chamber body opposite the pedestal and a second electrode may be coupled to the moveable stem. In certain embodiments, a fluid containment ring may be coupled to the pedestal and a dielectric containment ring may be coupled to the second electrode.

公开(公告)号：US20190103278A1

公开(公告)日：2019-04-04

申请号：US16189429

申请日：2018-11-13

Applicant: Applied Materials, Inc. ,  The Regents of the University of California

Inventor： Raymond HUNG ,  Namsung KIM ,  Srinivas D. NEMANI ,  Ellie Y. YIEH ,  Jong CHOI ,  Christopher AHLES ,  Andrew KUMMEL

IPC: H01L21/285 ,  H01L21/311 ,  H01L21/324 ,  C23C16/42 ,  C23C16/455 ,  C23C16/46

Abstract: Embodiments of the disclosure relate to selective metal silicide deposition methods. In one embodiment, a substrate having a silicon containing surface is heated and the silicon containing surface is hydrogen terminated. The substrate is exposed to sequential cycles of a MoF6 precursor and a Si2H6 precursor which is followed by an additional Si2H6 overdose exposure to selectively deposit a MoSix material comprising MoSi2 on the silicon containing surface of the substrate. Methods described herein also provide for selective native oxide removal which enables removal of native oxide material without etching bulk oxide materials.

公开(公告)号：US20180209035A1

公开(公告)日：2018-07-26

申请号：US15857384

申请日：2017-12-28

Applicant: Applied Materials, Inc.

Inventor： Jingjing LIU ,  Ludovic GODET ,  Srinivas D. NEMANI ,  Yongmei CHEN ,  Anantha K. SUBRAMANI

IPC: C23C14/34 ,  H01L21/265 ,  H01J37/34 ,  H01J37/32 ,  C23C14/50 ,  C23C14/35 ,  C23C14/48

Abstract: Embodiments of the present disclosure provide a sputtering chamber with in-situ ion implantation capability. In one embodiment, the sputtering chamber comprises a target, an RF and a DC power supplies coupled to the target, a support body comprising a flat substrate receiving surface, a bias power source coupled to the support body, a pulse controller coupled to the bias power source, wherein the pulse controller applies a pulse control signal to the bias power source such that the bias power is delivered either in a regular pulsed mode having a pulse duration of about 100-200 microseconds and a pulse repetition frequency of about 1-200 Hz, or a high frequency pulsed mode having a pulse duration of about 100-300 microseconds and a pulse repetition frequency of about 200 Hz to about 20 KHz, and an exhaust assembly having a concentric pumping port formed through a bottom of the processing chamber.