公开(公告)号：US20070202700A1

公开(公告)日：2007-08-30

申请号：US11363789

申请日：2006-02-27

Applicant: Uwe Leucke ,  Meihua Shen ,  Guangxiang Jin ,  Xikun Wang ,  Wei Liu ,  Scott Williams

Inventor： Uwe Leucke ,  Meihua Shen ,  Guangxiang Jin ,  Xikun Wang ,  Wei Liu ,  Scott Williams

IPC: H01L21/302 ,  C23F1/00

CPC classification number: C23F4/00 ,  H01L21/3065 ,  H01L21/3086 ,  H01L21/31116 ,  H01L21/31122 ,  H01L21/32136 ,  H01L21/32137 ,  H01L21/32139

Abstract: Methods for forming anisotropic features for high aspect ratio application in etch process are provided in the present invention. The methods described herein advantageously facilitates profile and dimension control of features with high aspect ratios through a sidewall passivation management scheme. In one embodiment, sidewall passivations are managed by selectively forming an oxidation passivation layer on the sidewall and/or bottom of etched layers. In another embodiment, sidewall passivation is managed by periodically clearing the overburden redeposition layer to preserve an even and uniform passivation layer thereon. The even and uniform passivation allows the features with high aspect ratios to be incrementally etched in a manner that pertains a desired depth and vertical profile of critical dimension in both high and low feature density regions on the substrate without generating defects and/or overetching the underneath layers.

Abstract translation: 在本发明中提供了用于在蚀刻工艺中形成用于高纵横比应用的各向异性特征的方法。 本文描述的方法通过侧壁钝化管理方案有利地促进具有高纵横比的特征的轮廓和尺寸控制。 在一个实施例中，通过在蚀刻层的侧壁和/或底部选择性地形成氧化钝化层来管理侧壁钝化。 在另一个实施例中，通过周期性地清除覆盖层再沉积层以在其上保持均匀且均匀的钝化层来管理侧壁钝化。 均匀和均匀的钝化允许以在衬底上的高和低特征密度区域中具有临界尺寸的期望深度和垂直分布的方式来逐渐蚀刻具有高纵横比的特征，而不产生缺陷和/或过蚀刻下面 层。

公开(公告)号：US20070199922A1

公开(公告)日：2007-08-30

申请号：US11363834

申请日：2006-02-27

Applicant: Meihua Shen ,  Uwe Leucke ,  Guangxiang Jin ,  Xikun Wang ,  Wei Liu ,  Scott Williams

Inventor： Meihua Shen ,  Uwe Leucke ,  Guangxiang Jin ,  Xikun Wang ,  Wei Liu ,  Scott Williams

IPC: H01L21/461 ,  B44C1/22 ,  H01L21/302

CPC classification number: H01L21/76802 ,  H01L21/32137 ,  H01L21/76814

Abstract: Methods for forming anisotropic features for high aspect ratio application in etch process are provided in the present invention. The methods described herein advantageously facilitates profile and dimension control of features with high aspect ratios through a sidewall passivation management scheme. In one embodiment, sidewall passivations are managed by selectively forming an oxidation passivation layer on the sidewall and/or bottom of etched layers. In another embodiment, sidewall passivation is managed by periodically clearing the overburden redeposition layer to preserve an even and uniform passivation layer thereon. The even and uniform passivation allows the features with high aspect ratios to be incrementally etched in a manner that pertains a desired depth and vertical profile of critical dimension in both high and low feature density regions on the substrate without generating defects and/or overetching the underneath layers.

公开(公告)号：US20060106739A1

公开(公告)日：2006-05-18

申请号：US10904493

申请日：2004-11-12

Applicant: Bryan Holzbauer ,  Scott Williams ,  James Maxson ,  Shane Jenkins ,  Stephen Kwan ,  Richard Gomer

Inventor： Bryan Holzbauer ,  Scott Williams ,  James Maxson ,  Shane Jenkins ,  Stephen Kwan ,  Richard Gomer

IPC: G06F17/00

CPC classification number: G06Q10/06 ,  G06Q50/06

Abstract: Methods, apparatus, and articles of manufacture such as software media for creating projected power production data are described herein. The method may comprise storing historical heat rate data for at least one power generation unit in a historical heat rate database. The method may also comprise retrieving the historical heat rate data from the database for a selected time interval and creating a projected cost curve and/or a projected price curve for a future time interval based on the historical heat rate data.

Abstract translation: 本文描述了用于创建投影电力生产数据的方法，装置和制品，例如用于创建投影电力生产数据的软件介质。 该方法可以包括将用于至少一个发电单元的历史热量数据存储在历史热量数据库中。 该方法还可以包括在所选择的时间间隔内从数据库检索历史热量数据，并且基于历史热量数据创建未来时间间隔的预计成本曲线和/或预计价格曲线。

公开(公告)号：US20060106501A1

公开(公告)日：2006-05-18

申请号：US10904491

申请日：2004-11-12

Applicant: Richard Gomer ,  Bryan Holzbauer ,  Scott Williams ,  Shane Jenkins ,  James Maxson ,  Stephen Kwan

Inventor： Richard Gomer ,  Bryan Holzbauer ,  Scott Williams ,  Shane Jenkins ,  James Maxson ,  Stephen Kwan

IPC: G05D11/00

CPC classification number: G05D21/02

Abstract: A method of generating NOx curves over a range of load points includes obtaining current measurements from a respective sensor and validating the current measurements. A plurality of input curves are generated using predefined inputs for each load point. The plurality of input curves include a first set point curve and a second set point curve, where the second setpoint curve includes the first setpoint curve offset with the current measurements. A plurality of NOx curves are generated including a design curve, an adjusted design curve, and a NOx generation curve created by a neural model. The second setpoint curve is passed through the neural model to derive the NOx generation curve. After validating the NOx generation curve and adjusted design curve, one of the plurality of NOx curves is outputted.

Abstract translation: 在一系列负载点上产生NOx曲线的方法包括从相应的传感器获得电流测量值并验证电流测量值。 使用每个负载点的预定义输入生成多个输入曲线。 多个输入曲线包括第一设定点曲线和第二设定点曲线，其中第二设定点曲线包括具有当前测量值的第一设定点曲线偏移。 产生多个NOx曲线，其包括设计曲线，经调整的设计曲线和由神经模型产生的NOx生成曲线。 第二个设定曲线通过神经模型得到NOx生成曲线。 在验证NOx生成曲线和调整后的设计曲线之后，输出多个NOx曲线中的一个。

公开(公告)号：US20060096880A1

公开(公告)日：2006-05-11

申请号：US10984429

申请日：2004-11-08

Applicant: Teresa Zander ,  Scott Williams

Inventor： Teresa Zander ,  Scott Williams

IPC: A61B19/02 ,  B65D73/00

CPC classification number: B65D83/0811 ,  A61F15/001 ,  B65D75/54 ,  B65D85/07 ,  B65D2231/001

Abstract: A dispensing aid is disclosed for facilitating removal of an individual product from a compressed package. The compressed package has multiple sides and contains a plurality of compressed products arranged in a row. Each of the products has first and second major surfaces. An opening is formed in the compressed package and is aligned perpendicular to the major surfaces of at least one of the products. The opening is sized to allow the products to be individually withdrawn. A slip sheet is positioned adjacent to at least the first major surface of the first product to be withdrawn. The slip sheet to the adjacent product has a lower average coefficient of friction value than the average coefficient of friction value of the first major surface of the product being withdrawn to an adjacent product. The slip sheet functions to reduce the force needed to remove the first product from the compressed package.

Abstract translation: 公开了一种用于便于从压缩包装中移除单个产品的分配助剂。 压缩包装具有多个侧面并且包含排列成一排的多个压缩产品。 每个产品都有第一和第二主表面。 开口形成在压缩包装中并且垂直于至少一个产品的主表面对准。 开放的大小允许产品单独撤回。 滑片位于与待取出的第一产品的至少第一主表面相邻的位置。 相邻产品的滑片具有比被抽出到相邻产品的产品的第一主表面的平均摩擦系数值更低的平均摩擦系数值。 滑板用于减少从压缩包装中移除第一产品所需的力。

公开(公告)号：US07008746B2

公开(公告)日：2006-03-07

申请号：US10660686

申请日：2003-09-12

Applicant: Scott Williams ,  Heather Penk ,  Heather Reid

Inventor： Scott Williams ,  Heather Penk ,  Heather Reid

IPC: G03G13/14 ,  G03C1/805 ,  B32B27/00

CPC classification number: B41M5/52 ,  B41M1/06 ,  B41M1/12 ,  B41M5/025 ,  B41M5/0256 ,  B41M5/0355 ,  B41M5/287 ,  B41M5/30 ,  B41M5/504 ,  B41M5/506 ,  B41M5/508 ,  B41M5/5227 ,  B41M5/5254 ,  B41M5/5281 ,  B44C1/1708 ,  D06P5/003 ,  G03C1/49845 ,  G03C11/12 ,  G03G7/002 ,  G03G7/0026 ,  G03G7/004 ,  G03G7/0046 ,  G03G7/0053 ,  Y10S428/914 ,  Y10S430/165 ,  Y10T428/24843 ,  Y10T428/31801 ,  Y10T428/31855 ,  Y10T428/31895 ,  Y10T428/31899 ,  Y10T428/31906 ,  Y10T428/31935 ,  Y10T428/31938

Abstract: A polymeric composition comprising a film-forming binder and a wax emulsion. Optionally included is a retention aid. Also provided is a coated transfer sheet comprising a substrate and at least one release layer comprising the polymeric composition.

Abstract translation: 包含成膜粘合剂和蜡乳液的聚合物组合物。 可选地包括助留剂。 还提供了一种涂覆的转印片，其包含基底和至少一个包含聚合物组合物的释放层。

公开(公告)号：US20050223465A1

公开(公告)日：2005-10-13

申请号：US10821636

申请日：2004-04-09

Applicant: Scott Williams ,  Loren Myhre ,  Ian Muir

Inventor： Scott Williams ,  Loren Myhre ,  Ian Muir

IPC: A41D1/04 ,  A41D13/005

CPC classification number: A41D13/005

Abstract: A article of apparel for moderating the body temperature of an individual is disclosed. The apparel includes a torso region for covering at least a portion of a torso of the individual. A plurality of cavities are distributed throughout the torso region, and a plurality of thermal inserts are positioned within the cavities. The thermal inserts may be bladders that enclose a fluid. A fitting system extends at least partially around the torso region. Instructions for utilizing the article of apparel may also be included, with the instructions being permanently secured to the article of apparel.

Abstract translation: 披露了一种用于调节个体体温的服装用品。 该服装包括用于覆盖个体躯干的至少一部分的躯干区域。 多个空腔分布在整个躯干区域中，并且多个热插入件位于空腔内。 热插入件可以是包围流体的气囊。 装配系统至少部分地围绕躯干区域延伸。 还可以包括使用服装物品的说明书，其中的说明被永久地固定在服装上。

公开(公告)号：US06787054B2

公开(公告)日：2004-09-07

申请号：US10358086

申请日：2003-02-03

Applicant: Xikun Wang ,  Scott Williams ,  Shaoher X. Pan

Inventor： Xikun Wang ,  Scott Williams ,  Shaoher X. Pan

IPC: C23F100

CPC classification number: H01J37/321 ,  H01L21/3065 ,  H01L21/3081 ,  H01L21/31116 ,  H01L21/32137 ,  Y10S134/902 ,  Y10S438/905 ,  Y10S438/906

Abstract: A process for etching a substrate and removing etch residue deposited on the surfaces in the etching chamber has two stages. In the first stage, an energized first process gas is provided in the chamber, and in the second stage, an energized second process gas is provided in the chamber. The energized first process gas comprises SF6 and Ar, the volumetric flow ratio of SF6 to other components of the first process gas being from about 5:1 to about 1:10. The energized second process gas comprises CF4 and Ar, the volumetric flow ratio of CF4 to other components of the second process gas being from about 1:0 to about 1:10.

Abstract translation: 用于蚀刻基板并去除沉积在蚀刻室中的表面上的蚀刻残余物的方法具有两个阶段。 在第一阶段中，在腔室中设置通电的第一处理气体，在第二阶段中，在室中设置通电的第二处理气体。 通电的第一工艺气体包括SF 6和Ar，SF 6与第一工艺气体的其它组分的体积流量比为约5:1至约1:10。 通电的第二工艺气体包括CF 4和Ar，CF 4与第二工艺气体的其它组分的体积流量比为约1:0至约1:10。

公开(公告)号：US06677242B1

公开(公告)日：2004-01-13

申请号：US09637838

申请日：2000-08-12

Applicant: Wei Liu ,  Scott Williams ,  Stephen Yuen ,  David Mui

Inventor： Wei Liu ,  Scott Williams ,  Stephen Yuen ,  David Mui

IPC: H01L21302

CPC classification number: H01J37/32082 ,  G03F7/427 ,  H01J37/32935 ,  H01L21/0273 ,  H01L21/3065 ,  H01L21/3081

Abstract: A method for processing a silicon substrate disposed in a substrate process chamber includes transferring the substrate into the substrate process chamber. The substrate having a hard mask formed thereon and a patterned photoresist overlying the hard mask to expose portions of the hard mask. The chamber being the type having a source power system and a bias power system. The method further includes etching the exposed portions of the hard mask to expose portions of the silicon substrate underlying the hard mask. Thereafter, the patterned photoresist is exposed to a first plasma formed from a first process gas to remove the photoresist from the hard mask. Thereafter, the exposed silicon substrate is etched by exposing the substrate to a second plasma formed from a second process gas by applying RF energy from the source power system and biasing the plasma toward the substrate. The substrate is transferred out of the substrate processing chamber.

Abstract translation: 设置在基板处理室中的处理硅基板的方法包括将基板转移到基板处理室中。 具有形成在其上的硬掩模的衬底和覆盖在硬掩模上的图案化光刻胶以暴露硬掩模的部分。 该室是具有源电力系统和偏置电力系统的类型。 该方法还包括蚀刻硬掩模的暴露部分以暴露位于硬掩模下方的硅衬底的部分。 此后，将图案化的光致抗蚀剂暴露于由第一工艺气体形成的第一等离子体以从硬掩模中除去光致抗蚀剂。 此后，通过从源电力系统施加RF能量并将等离子体偏压到衬底，将衬底暴露于由第二工艺气体形成的第二等离子体上来蚀刻暴露的硅衬底。 将衬底转移出衬底处理室。

公开(公告)号：US06527968B1

公开(公告)日：2003-03-04

申请号：US09536057

申请日：2000-03-27

Applicant: Xikun Wang ,  Scott Williams ,  Shaoher X. Pan

Inventor： Xikun Wang ,  Scott Williams ,  Shaoher X. Pan

IPC: B44C122

CPC classification number: H01J37/321 ,  H01L21/3065 ,  H01L21/3081 ,  H01L21/31116 ,  H01L21/32137 ,  Y10S134/902 ,  Y10S438/905 ,  Y10S438/906

Abstract: A process for etching a substrate 25 in an etching chamber 105, and simultaneously removing etch residue deposited on the surfaces of the walls 110 and components of the etching chamber 105. In one version, a two-stage method of opening a nitride mask layer on the substrate includes a first stage of providing a highly chemically reactive process gas in the chamber 105 to etch the nitride layer 32 and/or an underlying oxide layer 34, and a second stage of providing a less chemically reactive process gas in the chamber to etch the nitride layer 32 and/or the oxide layer 34 at a slower rate than the first stage. The first and second stage process gases may each comprise a fluorine containing gas, with the fluorine ratio of the first gas higher than the fluorine ratio of the second gas.

Abstract translation: 用于在蚀刻室105中蚀刻基板25并同时去除沉积在壁110的表面上的蚀刻残留物和蚀刻室105的部件的方法。在一种形式中，将氮化物掩模层打开的两阶段方法 衬底包括在室105中提供高度化学反应的工艺气体以蚀刻氮化物层32和/或下面的氧化物层34的第一阶段，以及在室中提供较少化学反应性工艺气体以蚀刻的第二阶段 氮化物层32和/或氧化物层34的速度比第一级慢。 第一和第二阶段工艺气体可以各自包含含氟气体，其中第一气体的氟比率高于第二气体的氟比率。