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    General strength and sensitivity enhancement method for micromachined device
    62.
    发明申请
    General strength and sensitivity enhancement method for micromachined device 审中-公开
    微加工装置的一般强度和灵敏度增强方法

    公开(公告)号：US20110115035A1

    公开(公告)日：2011-05-19

    申请号：US12807658

    申请日：2010-09-13

    Applicant: Jung-Tang Huang ,  Ming-Jhe Lin ,  Hou-Jun Hsu

    Inventor： Jung-Tang Huang ,  Ming-Jhe Lin ,  Hou-Jun Hsu

    IPC: H01L23/14 ,  H01L21/445

    CPC classification number: B81B3/0086 ,  B81B2201/0235 ,  B81B2201/0242 ,  B81B2203/0136 ,  B81B2207/015 ,  B81C2201/0167 ,  B81C2201/0197 ,  B81C2203/0714

    Abstract: This invention disclosed a method to strengthen structure and enhance sensitivity for CMOS-MEMS micro-machined devices which include micro-motion sensor, micro-actuator and RF switch. The steps of the said method contain defining deposited region by metal and passivation layer, forming a cavity for depositing metal structure by lithography process, depositing metal structure on the top metal layer of micromachined structure by Electroless plating, polishing process and etching process. The method aims at strengthening structures and minimizing CMOS-MEMS device size. Furthermore, this method can also be applied to inertia sensors such as accelerometer or gyroscope, which can enhance sensitivity and capacitive value, and deal with curl issues for suspended CMOS-MEMS devices.

    Abstract translation: 本发明公开了一种加强结构并增强CMOS-MEMS微加工器件的灵敏度的方法，包括微运动传感器，微执行器和RF开关。 所述方法的步骤包括通过金属和钝化层定义沉积区域，通过光刻工艺形成用于沉积金属结构的空腔，通过无电镀，抛光工艺和蚀刻工艺在金属微结构的顶部金属层上沉积金属结构。 该方法旨在加强结构并使CMOS-MEMS器件尺寸最小化。 此外，该方法还可以应用于诸如加速度计或陀螺仪的惯性传感器，其可以增强灵敏度和电容值，并且处理悬挂的CMOS-MEMS器件的卷曲问题。

    MEMS device having support structures configured to minimize stress-related deformation and methods for fabricating same
    65.
    发明授权
    MEMS device having support structures configured to minimize stress-related deformation and methods for fabricating same 有权
    具有构造成使应力相关变形最小化的支撑结构的MEMS器件及其制造方法

    公开(公告)号：US07747109B2

    公开(公告)日：2010-06-29

    申请号：US11506594

    申请日：2006-08-18

    Applicant: Fan Zhong ,  Lior Kogut

    Inventor： Fan Zhong ,  Lior Kogut

    IPC: G02F1/01

    CPC classification number: G02B26/0841 ,  B81B3/0072 ,  B81B2201/047 ,  B81B2203/0163 ,  B81B2203/019 ,  B81B2203/0307 ,  B81B2203/053 ,  B81C1/00142 ,  B81C1/00666 ,  B81C2201/0167 ,  G02B26/001 ,  Y10S359/90

    Abstract: Embodiments of MEMS devices include a movable layer supported by overlying support structures, and may also include underlying support structures. In one embodiment, the residual stresses within the overlying support structures and the movable layer are substantially equal. In another embodiment, the residual stresses within the overlying support structures and the underlying support structures are substantially equal. In certain embodiments, substantially equal residual stresses are be obtained through the use of layers made from the same materials having the same thicknesses. In further embodiments, substantially equal residual stresses are obtained through the use of support structures and/or movable layers which are mirror images of one another.

    Abstract translation: MEMS器件的实施例包括由上覆的支撑结构支撑的可移动层，并且还可以包括下面的支撑结构。 在一个实施例中，覆盖的支撑结构和可移动层内的残余应力基本相等。 在另一个实施例中，上覆支撑结构和下面的支撑结构内的残余应力基本相等。 在某些实施例中，通过使用由具有相同厚度的相同材料制成的层，可以获得基本相等的残余应力。 在另外的实施例中，通过使用作为彼此的镜像的支撑结构和/或可移动层来获得基本相等的残余应力。

    Ceramic components, coated structures and methods for making same
    66.
    发明申请
    Ceramic components, coated structures and methods for making same 审中-公开
    陶瓷部件，涂层结构及其制造方法

    公开(公告)号：US20100032857A1

    公开(公告)日：2010-02-11

    申请号：US11068520

    申请日：2005-02-28

    Applicant: Alain Izadnegahdar ,  Yeshwanth Narendar

    Inventor： Alain Izadnegahdar ,  Yeshwanth Narendar

    IPC: C23C16/01 ,  C23C16/32 ,  C04B35/565

    CPC classification number: B81C99/0085 ,  B81C2201/0167 ,  C23C16/01 ,  C23C16/325

    Abstract: Methods of forming ceramic components are disclosed. One method calls for chemical vapor depositing a ceramic material over a substrate having first and second opposite surfaces to define a coated structure, the ceramic material forming a layer overlying both the first and second opposite surfaces. The layer and the substrate have a difference in thermal expansion coefficients of at least 0.5 ppm/K. The substrate is removed, leaving behind the layer. Ceramic components and coated structures are also disclosed.

    Abstract translation: 公开了形成陶瓷部件的方法。 一种方法要求在具有第一和第二相对表面的衬底上化学气相沉积陶瓷材料以限定涂覆结构，陶瓷材料形成覆盖第一和第二相对表面的层。 该层和基底的热膨胀系数差异至少为0.5ppm / K。 去除衬底，留下该层。 还公开了陶瓷组分和涂层结构。

    Methods for etching layers within a MEMS device to achieve a tapered edge
    67.
    发明授权
    Methods for etching layers within a MEMS device to achieve a tapered edge 失效
    用于蚀刻MEMS器件内的层以实现锥形边缘的方法

    公开(公告)号：US07660058B2

    公开(公告)日：2010-02-09

    申请号：US11506770

    申请日：2006-08-18

    Applicant: Chengbin Qiu ,  Teruo Sasagawa ,  Ming-Hau Tung ,  Chun-Ming Wang ,  Stephen Zee

    Inventor： Chengbin Qiu ,  Teruo Sasagawa ,  Ming-Hau Tung ,  Chun-Ming Wang ,  Stephen Zee

    IPC: H01L21/302 ,  B44C1/22

    CPC classification number: G02B26/0841 ,  B81B3/0072 ,  B81B2201/047 ,  B81B2203/0163 ,  B81B2203/019 ,  B81B2203/0307 ,  B81B2203/053 ,  B81C1/00142 ,  B81C1/00666 ,  B81C2201/0167 ,  G02B26/001 ,  Y10S359/90

    Abstract: Certain MEMS devices include layers patterned to have tapered edges. One method for forming layers having tapered edges includes the use of an etch leading layer. Another method for forming layers having tapered edges includes the deposition of a layer in which the upper portion is etchable at a faster rate than the lower portion. Another method for forming layers having tapered edges includes the use of multiple iterative etches. Another method for forming layers having tapered edges includes the use of a liftoff mask layer having an aperture including a negative angle, such that a layer can be deposited over the liftoff mask layer and the mask layer removed, leaving a structure having tapered edges.

    Abstract translation: 某些MEMS器件包括被图案化以具有渐缩边缘的层。 用于形成具有渐缩边缘的层的一种方法包括使用蚀刻引导层。 用于形成具有锥形边缘的层的另一种方法包括沉积一层，其中上部可以比下部更快的速度进行刻蚀。 用于形成具有渐缩边缘的层的另一种方法包括使用多个迭代蚀刻。 用于形成具有锥形边缘的层的另一种方法包括使用具有包括负角度的孔的剥离掩模层，使得可以在剥离掩模层上沉积一层，并且去除掩模层，留下具有渐缩边缘的结构。

    METHOD OF MANUFACTURING MEMS DEVICES PROVIDING AIR GAP CONTROL
    68.
    发明申请
    METHOD OF MANUFACTURING MEMS DEVICES PROVIDING AIR GAP CONTROL 有权

    公开(公告)号：US20090213451A1

    公开(公告)日：2009-08-27

    申请号：US12436059

    申请日：2009-05-05

    Applicant: Ming-Hau Tung ,  Lior Kogut

    Inventor： Ming-Hau Tung ,  Lior Kogut

    IPC: G02B26/00

    CPC classification number: B81B3/0072 ,  B81B2201/042 ,  B81C1/00047 ,  B81C2201/0167

    Abstract: Methods and apparatus are provided for controlling a depth of a cavity between two layers of a light modulating device. A method of making a light modulating device includes providing a substrate, forming a sacrificial layer over at least a portion of the substrate, forming a reflective layer over at least a portion of the sacrificial layer, and forming one or more flexure controllers over the substrate, the flexure controllers configured so as to operably support the reflective layer and to form cavities, upon removal of the sacrificial layer, of a depth measurably different than the thickness of the sacrificial layer, wherein the depth is measured perpendicular to the substrate.

    Method to control residual stress in a film structure and a system thereof
    69.
    发明授权
    Method to control residual stress in a film structure and a system thereof 有权
    控制膜结构中的残余应力的方法及其系统

    公开(公告)号：US07470462B2

    公开(公告)日：2008-12-30

    申请号：US11061429

    申请日：2005-02-18

    Applicant: Michael J. Parthum, Sr.

    Inventor： Michael J. Parthum, Sr.

    IPC: B32B7/02 ,  B32B33/00

    CPC classification number: B81C1/00666 ,  B81C2201/0167 ,  Y10T428/24942 ,  Y10T428/2495 ,  Y10T428/31504

    Abstract: A method for controlling residual stress in a structure in a MEMS device and a structure thereof includes selecting a total thickness and an overall equivalent stress for the structure. A thickness for each of at least one set of alternating first and second layers is determined to control an internal stress with respect to a neutral axis for each of the at least alternating first and second layers and to form the structure based on the selected total thickness and the selected overall equivalent stress. Each of the at least alternating first and second layers is deposited to the determined thickness for each of the at least alternating first and second layers to form the structure.

    Abstract translation: 一种用于控制MEMS器件中的结构中的残余应力的方法及其结构包括为该结构选择总厚度和总体等效应力。 确定至少一组交替的第一和第二层中的每一个的厚度以控制至少交替的第一和第二层中的每一个相对于中性轴线的内部应力，并且基于所选择的总厚度形成结构 和所选择的整体等效应力。 至少交替的第一和第二层中的每一个被沉积到所确定的至少交替的第一和第二层中的每一个的厚度以形成该结构。

    Method of fabricating silicon-based MEMS devices
    70.
    发明授权
    Method of fabricating silicon-based MEMS devices 有权
    制造硅基MEMS器件的方法

    公开(公告)号：US07459329B2

    公开(公告)日：2008-12-02

    申请号：US11254774

    申请日：2005-10-21

    Applicant: Luc Ouellet ,  Robert Antaki

    Inventor： Luc Ouellet ,  Robert Antaki

    IPC: H01L21/00

    CPC classification number: B81C1/00666 ,  B81B2207/015 ,  B81C2201/0167

    Abstract: A method of fabricating a silicon-based microstructure is disclosed, which involves depositing electrically conductive amorphous silicon doped with first and second dopants to produce a structure having a residual mechanical stress of less than +/=100 Mpa. The dopants can either be deposited in successive layers to produce a laminated structure with a residual mechanical stress of less than +/=100Mpa or simultaneously to produce a laminated structure having a mechanical stress of less than +/=100Mpa.

    Abstract translation: 公开了一种制造硅基微结构的方法，其包括沉积掺杂有第一和第二掺杂剂的导电非晶硅，以产生具有小于+ / = 100Mpa的残余机械应力的结构。 掺杂剂可以连续沉积以产生具有小于+ 100 = 100Mpa的残余机械应力或同时产生机械应力小于+ 100％的层压结构。

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