Abstract:
The present invention is directed to a method and apparatus for forming soot used in making glass, and in particular, optical waveguides. A liquid precursor (66) is first fed into orifice (52) of a liquid orifice insert (48) within an injector (44) positioned within an atomizing burner assembly, and is thereafter discharged from the injector into a pressurization chamber (56). An atomization gas (70) is also fed into the pressurization chamber (56) to mix with the liquid precursor liquid stream (68) which breaks into droplets (76). The liquid precursor and atomization gas arm forced under pressure out of an atomization orifice (32) on the face of the burner (30) assembly. Flame gas (74), reaction gas (84) and shield gas (82) are ejected from burner orifices (40, 38, 36 and 34) to produce the flame. The atomized liquid precursor thus discharged is fed into the flame (72) produced at the face of the burner assembly where the atomized liquid precursor reacts with the flame to form soot (78) on a rotating mandrel (80).
Abstract:
An infrared absorption filter consisting of 70 to 98 mol % of SiO2, 1 to 12 mol % of CuO and 1 to 18 mol % of a network modifier oxide than CuO or CdO is provided. A process of fabricating an infrared absorption filter is also provided. The process comprises introducing a divalent copper compound and a compound of a metal species acting as a network modifier oxide in the form of metal ions into a wet gel. The wet gel can be dipped in a dipping solution to precipitate the divalent copper compound and the compound of a metal species acting as the network modifier oxide in the wet gel. The wet gel can be dried and heated, thereby obtaining an infrared absorption glass. The infrared absorption glass can be cut and polished, thereby fabricating a filter.
Abstract:
High index-contrast fiber waveguides, materials for forming high index-contrast fiber waveguides, and applications of high index-contrast fiber waveguides are disclosed.
Abstract:
A method of making fused silica includes generating a plasma, delivering reactants comprising a silica precursor into the plasma to produce silica particles, and depositing the silica particles on a deposition surface to form glass.
Abstract:
An object of the present invention is to provide a quartz glass body, especially a quartz glass jig for plasma reaction in producing semiconductors having excellent resistance against plasma corrosion, particularly, excellent corrosion resistance against F-based gaseous plasma; and a method for producing the same. A body made of quartz glass containing a metallic element and having an improved resistance against plasma corrosion is provided that contains bubbles and crystalline phase at an amount expressed by projected area of less than 100 mm2 per 100 cm3.
Abstract:
This ultralow-loss glass is characterized in that high purity silica glass contains 1 to 500 wt.ppm of at least one network modifying oxide. It is assumed that the network modifying oxide appropriately loosens the tetrahedral network structure of silica and hence Rayleigh scattering is decreased. Examples of the network modifying oxide include Na.sub.2 O, K.sub.2 O, Li.sub.2 O, MgO, CaO, and PbO. Since Rayleigh scattering losses are minimal in comparison with those of high purity silica glass, this impurity-added silica glass is excellent as a base material of a glass fiber for a long-distance transmission.
Abstract:
A non-phase separable glass material for fabricating a GRIN lens comprises 5-20 mole % boron oxide and ratio R of network modifiers in mole % to the network former boron oxide in mole % is in the range of about 1-1.5. The melted preform of such glass material is extruded through an opening to form a glass rod where the extrusion process eliminates bubbles that may be present in the preform. Neodymium oxide may be added in the frit material for forming the preform to reduce friction forces in the extrusion process and reduces the stress in the glass rod. Centerless grinding may be performed to control the diameter and roughness of the surface of the rod to control the diffusion parameters during the subsequent ion-exchange.
Abstract:
Large sol-gel derived silicon-containing monoliths are prepared with the use of drying control chemical additives selected from the group consisting of glycerol, formamide, oxalic acid and acids of the formula C.sub.n H.sub.2(n-1) O.sub.2 N to control the ultrastructure of the gel solid and pore phases. Gelation, aging, drying, and densification of the sol-gel derived monoliths may be performed rapidly in tens of hours instead of tens of days without cracking, final densification at temperature of 800.degree. C. to 1200.degree. C. or less being possible. The silicon-containing monolith comprises a ternary SiO.sub.2 --B.sub.2 O.sub.3 --Na.sub.2 O system.
Abstract:
A glass body having a graded (substantially Gaussian) index profile is produced by a process that comprises providing a doped porous body (e.g., having a uniform dopant distribution), heat treating the porous body in a halogen-containing atmosphere, and consolidating the porous body into the glass body. The heat treatment removes a predetermined portion of the dopant from the porous body, such that the radial dopant profile in the glass body differs from the initial profile in the porous body, and such that the Gaussian index profile results. Exemplarily, the porous body is a uniformly germania-doped, VAD-produced, high-silica rod having radially decreasing density, and the heat treatment comprises an 8-hour densification soak at 1300.degree. C. in 20% Cl, 80% He. In a preferred embodiment, silica overcladding is deposited on a graded index core rod produced according to the invention, and fiber drawn from the resulting composite glass body.
Abstract:
Silica-based optical fiber comprising at least a core and a cladding surrounding the core, both core and cladding material produced by a vapor phase deposition process. The core and/or the cladding comprise at least two substituents, one chosen from Li, Na, K, Rb, Cs, Be, Mg, Ca, Sr, Ba, and the 4f-type rare earths (the "modifiers"), and the other chosen from B, Al, Ga, In, P, As, and Sb (the "homogenizers"). The maximum concentration of the substituents in the fiber is such that 3