中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

68 records (took 0.015 seconds)

    Method for manufacturing single crystal
    1.
    发明授权
    Method for manufacturing single crystal 有权

    公开(公告)号：US09863060B2

    公开(公告)日：2018-01-09

    申请号：US15036095

    申请日：2014-11-12

    Applicant: SHIN-ETSU HANDOTAI CO., LTD.

    Inventor： Yuuichi Miyahara ,  Shou Takashima ,  Yasuhiko Sawazaki ,  Atsushi Iwasaki

    IPC: C30B15/10 ,  C30B29/06 ,  C03C3/04 ,  C30B15/30 ,  C30B30/04

    CPC classification number: C30B15/10 ,  C03C3/04 ,  C03C2201/30 ,  C03C2201/32 ,  C30B15/30 ,  C30B29/06 ,  C30B30/04

    Abstract: Method for manufacturing a single crystal according to a CZ method, including: pre-examining a correlation between an Al/Li ratio in a quartz raw material powder used for producing the quartz crucible, a use time of the crucible, a devitrification ratio at the use time, and occurrence or nonoccurrence of melt leakage attributable to the devitrification part; setting a range of the devitrification ratio of the quartz crucible in order not to generate the melt leakage, and determining a maximum use time of the quartz crucible according to the Al/Li ratio so as to fall within the set range of the ratio, on the basis of the correlation; and growing the single crystal by using the quartz crucible in the range of the maximum use time. This provides a manufacturing method which can efficiently use a quartz crucible to grow a single crystal while preventing occurrence of melt leakage.

    OPTICAL FILTER MATERIAL MADE OF GALLIUM-DOPED QUARTZ GLASS, FILTER COMPONENT AND METHOD FOR IRRADIATION BY MEANS OF A UV RADIATION SOURCE
    3.
    发明申请
    OPTICAL FILTER MATERIAL MADE OF GALLIUM-DOPED QUARTZ GLASS, FILTER COMPONENT AND METHOD FOR IRRADIATION BY MEANS OF A UV RADIATION SOURCE 有权
    玻璃珠光玻璃的滤光片材料，过滤元件和紫外线辐射源辐射的方法

    公开(公告)号：US20120056106A1

    公开(公告)日：2012-03-08

    申请号：US13262298

    申请日：2010-03-11

    Applicant: Christian Neumann

    Inventor： Christian Neumann

    IPC: G21K5/00 ,  C03C3/06 ,  C03C3/04

    CPC classification number: G02B5/208 ,  C03C3/06 ,  C03C4/0085 ,  C03C2201/30 ,  C03C2201/42 ,  C03C2203/10 ,  G02B5/226

    Abstract: The invention relates to an optical filter material made of doped quartz glass, which at a low dopant concentration exhibits spectral transmission as high as possible of at least 80% cm−1 for operating radiation of 254 nm, transmission as low as possible in the wave range below approximately 250 nm, and an edge wavelength λc within the wave range of 230 to 250 nm. It was found that this aim is achieved by doping comprising a gallium compound, which in the wave range below 250 nm has a maximum of an absorption band and thus determines the edge wave range λc.

    Abstract translation: 本发明涉及由掺杂石英玻璃制成的滤光材料，其在低掺杂浓度下表现出尽可能高的至少80％cm -1的光谱透射率，用于操作254nm的辐射，在波中尽可能低的透射 范围在250nm以下，边缘波长λc在230〜250nm的波长范围内。 发现该目的通过掺杂包括镓化合物来实现，该镓化合物在250nm以下的波长范围内具有最大吸收带，从而确定边缘波长λc。

    Fused silica glass crucible
    8.
    发明授权
    Fused silica glass crucible 失效
    熔融石英玻璃坩埚

    公开(公告)号：US5730800A

    公开(公告)日：1998-03-24

    申请号：US768282

    申请日：1996-12-17

    Applicant: Wataru Sato ,  Masahiro Sakurada ,  Ohta Tomohiko ,  Katsuhiko Kemmochi

    Inventor： Wataru Sato ,  Masahiro Sakurada ,  Ohta Tomohiko ,  Katsuhiko Kemmochi

    IPC: C03C3/06 ,  C30B15/00 ,  C30B15/10 ,  C30B35/00

    CPC classification number: C30B29/06 ,  C03C3/06 ,  C30B15/10 ,  C30B35/002 ,  C03C2201/30 ,  C03C2201/32

    Abstract: An improved method is proposed for the preparation of a semiconductor silicon single crystal of N-type by the Czochralski process, which is free from the problem of occurrence of delayed OSFs as defects in the single crystal even after prolonged storage at room temperature based on the discovery that presence of a certain amount of aluminum in the melt of silicon contained in a fused silica glass crucible acts to suppress occurrence of delayed OSFs as a type of defects in the single crystal while copper as an impurity acts adversely in this regard. With a known fact that an about 30 .mu.m thick inner surface layer of the crucible is melted down into the silicon melt during the single crystal pulling-up process, namely, the invention proposes use of a crucible of which the inner surface layer of 30 .mu.m thickness contains aluminum in an average concentration of 40 to 500 ppm by weight while the content of copper is as low as possible not to exceed 0.5 ppb by weight. Alternatively, when the fused silica glass crucible is deficient in the content of aluminum, an amount of aluminum is introduced as a dopant into the melt of silicon in the crucible to supplement the content of aluminum in order to be sufficient to suppress delayed OSFs.

    Abstract translation: 提出了一种通过Czochralski工艺制备N型半导体硅单晶的改进方法，其即使在室温下长时间储存​​之后也不会出现延迟OSF作为单晶的缺陷的问题，基于 发现在熔融石英玻璃坩埚中含有的硅熔体中存在一定量的铝作为抑制作为单晶中的缺陷的延迟OSF的发生，而作为杂质的铜在这方面起不利影响。 在已知的事实中，在单晶提拉过程中坩埚的内表面层约30μm的内表面层熔化成硅熔体，即本发明提出使用内表面层为30的坩埚 平均浓度为40〜500ppm的铝，而铜的含量尽可能低，不超过0.5ppb（重量）。 或者，当熔融石英玻璃坩埚的铝含量不足时，将铝的量作为掺杂剂引入到坩埚中的硅熔体中，以补充铝的含量，以足以抑制延迟的OSF。

    Method for the preparation of silicon single crystal
    9.
    发明授权
    Method for the preparation of silicon single crystal 失效
    硅单晶的制备方法

    公开(公告)号：US5609682A

    公开(公告)日：1997-03-11

    申请号：US498894

    申请日：1995-07-06

    Applicant: Wataru Sato ,  Masahiro Sakurada ,  Ohta Tomohiko ,  Katsuhiko Kemmochi

    Inventor： Wataru Sato ,  Masahiro Sakurada ,  Ohta Tomohiko ,  Katsuhiko Kemmochi

    IPC: C03C3/06 ,  C30B15/00 ,  C30B15/10 ,  C30B35/00

    CPC classification number: C30B29/06 ,  C03C3/06 ,  C30B15/10 ,  C30B35/002 ,  C03C2201/30 ,  C03C2201/32

    Abstract: An improved method is proposed for the preparation of a semiconductor silicon single crystal of N-type by the Czochralski process, which is free from the problem of occurrence of delayed OSFs as defects in the single crystal even after prolonged storage at room temperature based on the discovery that presence of a certain amount of aluminum in the melt of silicon contained in a fused silica glass crucible acts to suppress occurrence of delayed OSFs as a type of defects in the single crystal while copper as an impurity acts adversely in this regard. With a known fact that an about 30 .mu.m thick inner surface layer of the crucible is melted down into the silicon melt during the single crystal pulling-up process, namely, the invention proposes use of a crucible of which the inner surface layer of 30 .mu.m thickness contains aluminum in an average concentration of 40 to 500 ppm by weight while the content of copper is as low as possible not to exceed 0.5 ppb by weight. Alternatively, when the fused silica glass crucible is deficient in the content of aluminum, an amount of aluminum is introduced as a dopant into the melt of silicon in the crucible to supplement the content of aluminum in order to be sufficient to suppress delayed OSFs.

    Abstract translation: 提出了一种通过Czochralski工艺制备N型半导体硅单晶的改进方法，其即使在室温下长时间储存​​之后也不会出现延迟OSF作为单晶的缺陷的问题，基于 发现在熔融石英玻璃坩埚中含有的硅熔体中存在一定量的铝作为抑制作为单晶中的缺陷的延迟OSF的发生，而作为杂质的铜在这方面起不利影响。 在已知的事实中，在单晶提拉过程中坩埚的内表面层约30μm的内表面层熔化成硅熔体，即本发明提出使用内表面层为30的坩埚 平均浓度为40〜500ppm的铝，而铜的含量尽可能低，不超过0.5ppb（重量）。 或者，当熔融石英玻璃坩埚的铝含量不足时，将铝的量作为掺杂剂引入到坩埚中的硅熔体中，以补充铝的含量，以足以抑制延迟的OSF。

    Fabrication methods of doped silica glass and optical fiber preform by using the doped silica glass
    10.
    发明授权
    Fabrication methods of doped silica glass and optical fiber preform by using the doped silica glass 失效
    通过掺杂石英玻璃制备掺杂石英玻璃和光纤预制棒的方法

    公开(公告)号：US4414012A

    公开(公告)日：1983-11-08

    申请号：US300296

    申请日：1981-09-08

    Applicant: Shoichi Suto ,  Hiroyuki Suda ,  Fumiaki Hanawa ,  Motohiro Nakahara ,  Nobuo Inagaki

    Inventor： Shoichi Suto ,  Hiroyuki Suda ,  Fumiaki Hanawa ,  Motohiro Nakahara ,  Nobuo Inagaki

    IPC: C03B20060101 ,  C03B19/10 ,  C03B37/014 ,  C03C3/06 ,  C03C13/04 ,  C03B19/06 ,  C03B20/00

    CPC classification number: C03B19/106 ,  C03B19/102 ,  C03B37/01413 ,  C03B37/0142 ,  C03B37/01486 ,  C03C13/045 ,  C03C3/06 ,  C03B2203/24 ,  C03B2203/26 ,  C03B2207/06 ,  C03B2207/20 ,  C03B2207/28 ,  C03B2207/50 ,  C03B2207/64 ,  C03B2207/87 ,  C03C2201/30 ,  C03C2201/40 ,  C03C2203/40

    Abstract: Manufacturing method of doped silica glass suitable for optical fiber wherein quartz powder or SiO.sub.2 glass fine particles are exposed to a gas for producing the doped silica glass containing SiCl.sub.4, a gaseous additive and water vapor (H.sub.2 O) to add the dopant to the glass body, and then the resulting glass body is fused at a high temperature, thereby producing a transparent doped silica glass in which the production of the glass particles, the addition of the dopant, and the vitrification of the glass body are carried out by separate steps under respective suitable conditions. The manufacturing speed is remarkably increased because of the separate steps. The content of the dopant is not limited, but can be adjusted with any desired amount by changing the reaction time of dissolution. Dopant components like PbO.sub.2, SnO.sub.2, ZnO which were typically not added to the glass body can now be added thereto. Also, a method of manufacturing an optical fiber preform is disclosed wherein the doped silica glass is deposited and fused on a starting material which is inclined by an angle within a range of 5.degree.-90.degree. with respect to a blow-off direction of the flow of the doped silica glass to form a transparent doped silica glass body having a uniform outer diameter and a uniform boundary surface at a high synthesizing speed. This latter method aids mass production of optical fibers at low cost.

    Abstract translation: 适用于光纤的掺杂二氧化硅玻璃的制造方法，其中将石英粉末或SiO 2玻璃微粒暴露于用于生产含SiCl4，气态添加剂和水蒸汽（H 2 O）的掺杂石英玻璃的气体中以将掺杂剂添加到玻璃体中， 然后将所得的玻璃体在高温下熔融，由此制备透明掺杂的石英玻璃，其中玻璃颗粒的产生，掺杂剂的添加和玻璃体的玻璃化在各自的步骤下通过各自的步骤进行 适合条件。 由于单独的步骤，制造速度显着增加。 掺杂剂的含量没有限制，但可以通过改变溶解的反应时间以任何所需的量进行调节。 现在可以向其中加入通常不加入到玻璃体中的掺杂剂组分如PbO 2，SnO 2，ZnO。 此外，公开了一种制造光纤预制棒的方法，其中将掺杂的石英玻璃沉积并熔合在起始材料上，所述起始材料相对于所述材料的吹出方向倾斜5°-90°的范围内的角度 掺杂石英玻璃的流动，以形成具有均匀外径和高合成速度的均匀边界表面的透明掺杂石英玻璃体。 后一种方法有助于以低成本大量生产光纤。

Patent Agency Ranking