Thin-film resistor, wiring substrate, and method for manufacturing the same
    61.
    发明申请
    Thin-film resistor, wiring substrate, and method for manufacturing the same 审中-公开
    薄膜电阻器,布线基板及其制造方法

    公开(公告)号:US20020030577A1

    公开(公告)日:2002-03-14

    申请号:US09951666

    申请日:2001-09-12

    Abstract: A thin-film resistor that enables a pattern to be simply formed by means of wet etching, that has an excellent resistance temperature characteristic, and that can be easily manufactured, and a method for manufacturing this thin-film resistor, as well as a wiring substrate with this thin-film resistor formed therein. A thin resistor film according to this invention has a structure in which crystal grains deposit in the matrix of amorphous titanium nitride. The thin resistor film is formed on a substrate. The crystal grains includes at least one of crystal titanium nitride and crystal titanium. The thin resistor film can be manufactured using a simple process and can provide a wide range of resistance values with a small tolerance and a temperature coefficient of resistance close to zero.

    Abstract translation: 一种薄膜电阻器,其能够通过湿法蚀刻简单地形成图案,具有优异的电阻温度特性,并且可以容易地制造,以及制造该薄膜电阻器的方法以及布线 基板上形成有该薄膜电阻。 根据本发明的薄电阻膜具有其中晶粒沉积在非晶氮化钛基体中的结构。 薄电阻膜形成在基板上。 晶粒包括晶体氮化钛和晶体钛中的至少一种。 可以使用简单的工艺制造薄电阻膜,并且可以提供具有小公差和电阻温度系数接近于零的宽范围的电阻值。

    Thin integral resistor/capacitor/inductor package, method of manufacture
    62.
    发明授权
    Thin integral resistor/capacitor/inductor package, method of manufacture 失效
    薄集成电阻/电容/电感封装,制造方法

    公开(公告)号:US06356455B1

    公开(公告)日:2002-03-12

    申请号:US09404496

    申请日:1999-09-23

    Abstract: A thin electrical circuitry structure is formed which contains conductive circuitry traces, integral capacitors and integral resistors. A first laminate structure comprises a conductive foil having a layer of embeddable dielectric material laminated thereto. A second laminate structure comprises a conductive foil having a layer of resistive material on one side, the thickness of the resistive material layer being less than that of the layer of embeddable dielectric material. The resistive material layer is circuitized to produce resistive patches, and the two structures are laminated together, embedding the resistive patches in the dielectric material layer. One of the foils is circuitized providing circuitry traces, optional inductor coils, and capacitor plates. That foil embedded in dielectric laminate to support the structure for further processing. The other foil is then circuitized providing circuitry traces, optional inductor coils and capacitor plates. Traces on one side connector with the resistive material patches to provide the resistors.

    Abstract translation: 形成薄电路结构,其包含导电电路迹线,集成电容器和积分电阻器。 第一层压结构包括具有层压在其上的可嵌入介质材料层的导电箔。 第二层压结构包括在一侧具有电阻材料层的导电箔,电阻材料层的厚度小于可嵌入介电材料层的厚度。 电阻材料层被电路化以产生电阻贴片,并且将两个结构层压在一起,将电阻贴片嵌入电介质材料层中。 其中一个箔被电路化,提供电路迹线,可选的电感线圈和电容器板。 该箔片嵌入电介质层压板中以支撑结构进行进一步处理。 然后将另一片电路电路化,提供电路迹线,可选的电感线圈和电容器板。 在一侧连接器上跟踪电阻材料贴片以提供电阻。

    Method of manufacture of integral low and high value resistors on a printed circuit board
    63.
    发明申请
    Method of manufacture of integral low and high value resistors on a printed circuit board 审中-公开
    在印刷电路板上制造集成的低和高值电阻器的方法

    公开(公告)号:US20020013997A1

    公开(公告)日:2002-02-07

    申请号:US09957747

    申请日:2001-09-21

    Abstract: Printed circuit boards with integral high and low value resistors are efficiently produced. The method of their manufacture entails applying a first layer of a low resistance material onto a dielectric substrate in a predetermined thickness and pattern. The pattern defines the electrical lengths and widths of low value resistors, as well as pairs of terminal electrode pads for the high value resistors. A second layer of a high resistance material is applied between and in contact with the top surfaces of the facing ends of each member of the terminal pad pairs. The fixed lengths, widths and thicknesses of the patterned high resistance material determine the values of the high value resistors. Conductive metal terminals are provided at the ends of the low value resistors and at the distal ends of the high value resistor pad pairs to complete the resistors.

    Abstract translation: 具有集成高,低值电阻器的印刷电路板得到有效的生产。 其制造方法需要以预定的厚度和图案将第一层低电阻材料施加到电介质基板上。 该模式定义了低值电阻器的电气长度和宽度,以及用于高值电阻器的一对端子电极焊盘。 将高电阻材料的第二层施加在端子垫对的每个构件的面对端的顶表面之间并与之接触。 图案化高电阻材料的固定长度,宽度和厚度决定了高值电阻器的值。 导电金属端子设置在低值电阻的两端,并在高电阻焊盘对的末端设置,以完成电阻。

    Fabricating high-Q RF components
    66.
    发明授权
    Fabricating high-Q RF components 有权
    制造高Q射频元件

    公开(公告)号:US06232047B1

    公开(公告)日:2001-05-15

    申请号:US09261093

    申请日:1999-03-02

    Abstract: The specification describes method for improving the edge acuity of conductive metal strips formed by thick film paste techniques. The advantages of the bulk properties of strips formed using thick film technology are realized while the drawback of poor edge definition is overcome using a thin film trim strip at the edge of the conductive strip.

    Abstract translation: 该说明书描述了用于改善由厚膜糊技术形成的导电金属条的边缘敏锐度的方法。 实现了使用厚膜技术形成的条的体积特性的优点,同时利用在导电条的边缘处的薄膜修剪带克服了差的边缘限定的缺点。

    Nanolaminated thin film circuitry materials
    67.
    发明授权
    Nanolaminated thin film circuitry materials 有权
    纳米层压薄膜电路材料

    公开(公告)号:US06212078B1

    公开(公告)日:2001-04-03

    申请号:US09427767

    申请日:1999-10-27

    Abstract: Nanolaminates are formed by alternating deposition, e.g., by combustion chemical vapor deposition (CCVD), layers of resistive material and layers of dielectric material. Outer resistive material layers are patterned to form discrete patches of resistive material. Electrical pathways between opposed patches of resistive material on opposite sides of the laminate act as capacitors. Electrical pathways horizontally through resistive material layers, which may be connected by via plated holes, act as resistors.

    Abstract translation: 通过交替沉积,例如通过燃烧化学气相沉积(CCVD),电阻材料层和电介质材料层形成纳米级氨酸盐。 外部电阻材料层被图案化以形成电阻材料的离散贴片。 在层压板相对两侧的相对电阻材料片之间的电气通路用作电容器。 通过可通过电镀孔连接的电阻材料层的电路径用作电阻。

    Method of preparing metal thin film having excellent transferability
    70.
    发明授权
    Method of preparing metal thin film having excellent transferability 失效
    制备转印性优异的金属薄膜的方法

    公开(公告)号:US6007652A

    公开(公告)日:1999-12-28

    申请号:US26208

    申请日:1993-03-02

    Abstract: A metal thin film having excellent transferability onto a ceramic sheet is provided in order to facilitate formation of an internal electrode for a multilayer ceramic capacitor, for example, by a technique of transferring a metal thin film. A first metal layer (2) of nickel or copper or another metal is formed on a film (1) by vapor deposition, and then a second metal layer (3) of nickel or copper or another metal is formed on the first metal layer (2) by wet plating such as electroplating or electroless plating, thereby providing a metal thin film constituted by the first and second metal layers (2 and 3) having excellent transferability.

    Abstract translation: 提供了具有优异的陶瓷片转印性的金属薄膜,以便于例如通过转印金属薄膜的技术形成多层陶瓷电容器的内部电极。 通过气相沉积在膜(1)上形成镍或铜或其他金属的第一金属层(2),然后在第一金属层上形成镍或铜或其他金属的第二金属层(3) 2)通过电镀或化学镀等湿法镀覆,由此提供由具有优异转印性的第一和第二金属层(2和3)构成的金属薄膜。

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