公开(公告)号：US06515293B1

公开(公告)日：2003-02-04

申请号：US09671207

申请日：2000-09-28

Applicant: Chung-sam Jun ,  Sang-mun Chon ,  Sang-bong Choi ,  Hyun-suk Cho ,  Pil-sik Hyun

Inventor： Chung-sam Jun ,  Sang-mun Chon ,  Sang-bong Choi ,  Hyun-suk Cho ,  Pil-sik Hyun

IPC: G01N2186

CPC classification number: H01L22/26 ,  G01B11/0625 ,  H01L22/12

Abstract: A method of measuring the thickness of a thin layer, by which the thickness of a top layer formed on the surface of a wafer can be detected in real time, and an apparatus therefor. This method includes irradiating light onto a cell and obtaining luminance from reflected light, detecting the thickness of a thin layer in an oxide site which is adjacent to the cell, repeating the irradiating and detecting steps to obtain a plurality of luminance values from cells formed on the wafer and a plurality of thickness values of thin layers in oxide sites that are adjacent to the cells, and employing a thickness calculation formula for calculating the thickness of a top layer using the plurality of luminance values and plurality of thickness values obtained in the prior steps. The thickness of a thin layer is directly detected from the luminance of light reflected by the cell, so that it can be precisely detected in a non-destructive manner, thus making it possible to detect the thickness of a thin layer in real time during the manufacture of a semiconductor device.

Abstract translation: 测量薄层厚度的方法，通过该厚度可以实时检测在晶片表面上形成的顶层的厚度及其装置。 该方法包括将光照射到电池上并从反射光获得亮度，检测与电池相邻的氧化物部位中的薄层的厚度，重复照射和检测步骤，从而形成多个亮度值 所述晶片和与所述单元相邻的氧化物部位中的薄层的多个厚度值，并且使用使用所述多个亮度值和在先前获得的多个厚度值来计算顶层的厚度的厚度计算公式 脚步。 从单元反射的光的亮度直接检测薄层的厚度，从而可以以非破坏性的方式精确地检测薄层的厚度，从而使得可以实时地检测薄层的厚度 制造半导体器件。

公开(公告)号：US09678020B2

公开(公告)日：2017-06-13

申请号：US14795396

申请日：2015-07-09

Applicant: Joon-Seo Song ,  Woo-seok Ko ,  Ji-Young Shin ,  Seong-Jin Yun ,  Yu-Sin Yang ,  Sang-Kil Lee ,  Chung-Sam Jun

Inventor： Joon-Seo Song ,  Woo-seok Ko ,  Ji-Young Shin ,  Seong-Jin Yun ,  Yu-Sin Yang ,  Sang-Kil Lee ,  Chung-Sam Jun

IPC: G01N21/95 ,  G01N21/88 ,  G01N21/956

CPC classification number: G01N21/9505 ,  G01N21/8806 ,  G01N21/9501 ,  G01N21/95692 ,  G01N2201/061

Abstract: Example embodiments relate to an apparatus and method for inspecting a substrate defect. The substrate defect inspecting apparatus includes a substrate, a light source emitting an infrared beam to the substrate, a detector detecting the infrared beam reflected from the substrate, and a defect analyzer receiving first information and second information from the detector and analyzing defects existing in the substrate. According to at least one example embodiment, the second information is acquired during a later process than the first information.

公开(公告)号：US09455206B2

公开(公告)日：2016-09-27

申请号：US14796478

申请日：2015-07-10

Applicant: Seong-Jin Yun ,  Woo-Seok Ko ,  Yu-Sin Yang ,  Sang-Kil Lee ,  Chung-Sam Jun

Inventor： Seong-Jin Yun ,  Woo-Seok Ko ,  Yu-Sin Yang ,  Sang-Kil Lee ,  Chung-Sam Jun

IPC: H01L21/66 ,  H01J37/22

CPC classification number: H01L22/20 ,  H01J37/222 ,  H01J2237/221 ,  H01J2237/2617 ,  H01J2237/2817

Abstract: An overlay measuring method includes irradiating an electron beam onto a sample, including a multi-layered structure of overlapped upper and lower patterns formed thereon, to obtain an actual image of the upper and lower patterns. A first image representing the upper pattern and a second image representing the lower pattern are obtained from the actual image. A reference position for the upper and lower patterns is determined from a design image of the upper and lower patterns. A position deviation of the upper pattern with respect to the reference position in the first image and a position deviation of the lower pattern with respect to the reference position in the second image are calculated to determine an overlay between the upper pattern and the lower pattern.

Abstract translation: 覆盖测量方法包括将电子束照射到样品上，包括形成在其上的重叠的上下图案的多层结构，以获得上下图案的实际图像。 从实际图像中获得代表上部图案的第一图像和表示较低图案的第二图像。 根据上下图案的设计图像确定上下图案的参考位置。 计算上部图形相对于第一图像中的基准位置的位置偏差和下部图形相对于第二图像中的基准位置的位置偏差，以确定上部图案和下部图案之间的叠加。

公开(公告)号：US08184899B2

公开(公告)日：2012-05-22

申请号：US12383017

申请日：2009-03-19

Applicant: Yu-Sin Yang ,  Kyung-Suk Song ,  Ji-Hae Kim ,  Chung-Sam Jun

Inventor： Yu-Sin Yang ,  Kyung-Suk Song ,  Ji-Hae Kim ,  Chung-Sam Jun

IPC: G06K9/00

CPC classification number: G06T7/0004 ,  G06T2207/30148

Abstract: In a method of detecting a defect on an object, a preliminary reference image can be obtained from a plurality of comparison regions defined on the object. The preliminary reference image is divided into reference zones by a similar brightness. Each of the reference zones is provided with substantially the same gray level, respectively, to obtain a reference image. Whether a defect exists in an inspection region in the comparison regions is determined using the reference image. Thus, defects in the inspection regions having different brightnesses can be detected using the properly obtained reference image.

Abstract translation: 在检测物体上的缺陷的方法中，可以从对象上定义的多个比较区域中获得初步参考图像。 初步参考图像以相似的亮度分为参考区域。 每个参考区分别具有基本上相同的灰度级，以获得参考图像。 使用参考图像确定在比较区域中的检查区域中是否存在缺陷。 因此，可以使用适当地获得的参考图像来检测具有不同亮度的检查区域中的缺陷。

公开(公告)号：US08126258B2

公开(公告)日：2012-02-28

申请号：US11979776

申请日：2007-11-08

Applicant: Yu-Sin Yang ,  Chung-Sam Jun ,  Jong-An Kim ,  Moon-Shik Kang ,  Ji-Hye Kim

Inventor： Yu-Sin Yang ,  Chung-Sam Jun ,  Jong-An Kim ,  Moon-Shik Kang ,  Ji-Hye Kim

IPC: G06K9/00

CPC classification number: G06T7/001 ,  G06T2207/10056 ,  G06T2207/20056 ,  G06T2207/30148

Abstract: In a method of detecting defects in patterns and an apparatus for performing the method, a first image of a detection region on a semiconductor substrate may be acquired. A second image may be acquired from the first image by performing a Fourier transform and performing a low pass filtering. The second image may be compared with a reference image so that the defects of the detection region are detected. Existence of the defect of the second image is determined using a relation value between a grey level of each of pixels of the second image and the reference image, respectively. When a defect exists, the horizontal and the vertical positions of the pixel where the relation value is minimum are combined to determine the position of the defect.

Abstract translation: 在检测图案中的缺陷的方法和执行该方法的装置中，可以获取半导体衬底上的检测区域的第一图像。 可以通过执行傅里叶变换并执行低通滤波从第一图像获取第二图像。 可以将第二图像与参考图像进行比较，从而检测出检测区域的缺陷。 使用第二图像的每个像素的灰度级与参考图像之间的关系值来确定第二图像的缺陷的存在。 当存在缺陷时，组合关系值最小的像素的水平和垂直位置以确定缺陷的位置。

公开(公告)号：US08055056B2

公开(公告)日：2011-11-08

申请号：US11934972

申请日：2007-11-05

Applicant: Jong-An Kim ,  Yu-Sin Yang ,  Chung-Sam Jun ,  Moon-Shik Kang ,  Ji-Hye Kim

Inventor： Jong-An Kim ,  Yu-Sin Yang ,  Chung-Sam Jun ,  Moon-Shik Kang ,  Ji-Hye Kim

IPC: G06K9/00 ,  G01N21/00

CPC classification number: G06T7/0004 ,  G06T2207/30148

Abstract: In a method of detecting defects of patterns on a semiconductor substrate and an apparatus for performing the method information on positions of reference defects influencing an operation of a circuit including the patterns when the patterns are formed on the semiconductor substrate is acquired in advance. Preliminary defects of the patterns formed on the semiconductor substrate are detected. Positions of the preliminary defects of the patterns are compared with positions of the reference defects. The preliminary defects having the positions substantially the same as the positions of the reference defects are set to be defects of the patterns so that the actual defects are detected.

Abstract translation: 在半导体衬底上检测图案的缺陷的方法以及当在半导体衬底上形成图案时影响包括图案的电路的工作的参考缺陷的位置执行方法信息的装置的方法被预先获取。 检测在半导体衬底上形成的图案的初步缺陷。 将模式的初步缺陷的位置与参考缺陷的位置进行比较。 具有与参考缺陷的位置基本相同的位置的初步缺陷被设置为图案的缺陷，从而检测到实际的缺陷。

公开(公告)号：US20110097829A1

公开(公告)日：2011-04-28

申请号：US12911190

申请日：2010-10-25

Applicant: Woo-seok KO ,  Chung-sam JUN ,  Hyung-su SON ,  Yu-sin YANG

Inventor： Woo-seok KO ,  Chung-sam JUN ,  Hyung-su SON ,  Yu-sin YANG

IPC: H01L21/66 ,  G01Q10/00

CPC classification number: G01Q60/30 ,  H01L22/12 ,  H01L22/14

Abstract: A method for inspection of defects on a substrate includes positioning a probe of a scanning probe microscopy (SPM) over and spaced apart from a substrate, includes scanning the substrate by changing a relative position of the probe with respect to the substrate on a plane spaced apart from and parallel to the substrate, and includes measuring a value of an induced current generated via the probe in at least two different regions of the substrate. The value of the induced current is variable according to at least a shape and a material of the substrate. The method further includes determining whether a defect exists by comparing the values of the induced currents measured in the at least two different regions of the substrate.

Abstract translation: 一种用于检查衬底上的缺陷的方法，包括将扫描探针显微镜（SPM）的探针定位在衬底之上并与衬底间隔开的步骤，包括通过在相隔的平面上改变探针相对于衬底的相对位置来扫描衬底 除了并且平行于衬底，并且包括测量在衬底的至少两个不同区域中经由探针产生的感应电流的值。 感应电流的值根据至少衬底的形状和材料是可变的。 该方法还包括通过比较在衬底的至少两个不同区域中测量的感应电流的值来确定是否存在缺陷。

公开(公告)号：US07646478B2

公开(公告)日：2010-01-12

申请号：US11703095

申请日：2007-02-07

Applicant: Koung-Su Shin ,  Dong-Su Ha ,  Chung-Sam Jun

Inventor： Koung-Su Shin ,  Dong-Su Ha ,  Chung-Sam Jun

IPC: G01N21/00

CPC classification number: G01J3/10 ,  G01J3/02 ,  G01J3/0267 ,  G01J3/0291 ,  G01N21/255

Abstract: An apparatus for examining spectral characteristics of an object may include a chuck configured to support and releasably fix the object, wherein the chuck is larger than the object, a first light source assembly integral with the chuck and configured to illuminate a bottom surface of the object with light having a predetermined spectrum and intensity, and a transmission analysis unit for collecting and analyzing light transmitted through the object. The first light source assembly may include multiple and/or adjustable light sources. A second light source assembly may illuminate a top surface of the object, and a reflection analysis unit may collect resultant reflected light.

Abstract translation: 用于检查物体的光谱特性的装置可以包括配置成支撑和可释放地固定物体的卡盘，其中卡盘大于物体;第一光源组件，与卡盘一体并且被构造成照射物体的底面 具有预定的光谱和强度的光，以及用于收集和分析透过物体的光的透射分析单元。 第一光源组件可以包括多个和/或可调光源。 第二光源组件可以照亮物体的顶表面，并且反射分析单元可以收集所得到的反射光。

公开(公告)号：US07626164B2

公开(公告)日：2009-12-01

申请号：US11564726

申请日：2006-11-29

Applicant: Young-Jee Yoon ,  Jung-Taek Lim ,  Tae-Sung Kim ,  Chung-Sam Jun ,  Sung-Hong Park

Inventor： Young-Jee Yoon ,  Jung-Taek Lim ,  Tae-Sung Kim ,  Chung-Sam Jun ,  Sung-Hong Park

IPC: G01N23/00

CPC classification number: G01N23/203

Abstract: In an embodiment, a method of scanning a substrate, and a method and an apparatus for analyzing crystal characteristics are disclosed. A sequential scan on the scan areas using a first electron beam and a second electron beam are repeatedly performed. The electrons accumulated in the scan areas by the first electron beam are removed from the scan areas by the second electron beam. When a size of the scan area is substantially the same as a spot size of the first electron beam, adjacent scan areas partially overlap each other. When each of the scan areas is larger than a spot size of the first electron beam, the adjacent scan areas do not overlap each other. Images of the scan areas are generated using back-scattered electrons emitted from each of the scan areas by irradiating the first electron beam to analyze crystal characteristics of circuit patterns on the substrate.

Abstract translation: 在一个实施例中，公开了一种扫描衬底的方法，以及用于分析晶体特性的方法和装置。 使用第一电子束和第二电子束对扫描区域进行顺序扫描。 通过第二电子束从扫描区域去除由第一电子束累积在扫描区域中的电子。 当扫描区域的尺寸与第一电子束的光斑尺寸基本相同时，相邻的扫描区域彼此部分重叠。 当每个扫描区域大于第一电子束的光斑尺寸时，相邻的扫描区域彼此不重叠。 通过照射第一电子束来分析从每个扫描区域发射的背散射电子来分析扫描区域的图像，以分析衬底上的电路图案的晶体特性。

公开(公告)号：US07446865B2

公开(公告)日：2008-11-04

申请号：US11421019

申请日：2006-05-30

Applicant: Ki-Suk Chung ,  Chung-Sam Jun ,  Yu-Sin Yang ,  Byung-Sug Lee ,  Ji-Young Shin ,  Tae-Sung Kim

Inventor： Ki-Suk Chung ,  Chung-Sam Jun ,  Yu-Sin Yang ,  Byung-Sug Lee ,  Ji-Young Shin ,  Tae-Sung Kim

IPC: G01N21/00

CPC classification number: G06T7/0004

Abstract: A method of classifying defects of an object includes irradiating multi-wavelength light onto the object, splitting light reflected from the object into light beams, each of the light beams having different wavelengths, obtaining image information of the object based on each of the light beams, forming a characteristic matrix that represent the wavelengths and the image information, and analyzing the characteristic matrix to determine types of the defects on the object. Thus, the defects may be accurately classified using a difference between reactivity of each of the defects in accordance with variations of the wavelengths and inspection conditions.

Abstract translation: 对物体的缺陷进行分类的方法包括将多波长光照射到物体上，将从物体反射的光分成光束，每个光束具有不同的波长，基于每个光束获得物体的图像信息 ，形成表示波长和图像信息的特征矩阵，并且分析特征矩阵以确定对象上的缺陷的类型。 因此，可以使用根据波长的变化和检查条件的每个缺陷的反应性之间的差异来精确地分类缺陷。