公开(公告)号：US20240355581A1

公开(公告)日：2024-10-24

申请号：US18383422

申请日：2023-10-24

Applicant: Integrated Dynamic Electron Solutions, Inc. ,  The Provost, Fellows, Foundation Scholars, and the other members of Board, of the College of the Hol

Inventor： Bryan Walter REED ,  Lewys JONES

IPC: H01J37/28 ,  H01J37/147 ,  H01J37/22 ,  H01J37/244

CPC classification number: H01J37/28 ,  H01J37/1477 ,  H01J37/222 ,  H01J37/244 ,  H01J2237/24495 ,  H01J2237/24535 ,  H01J2237/2802

Abstract: A method for measuring an electron signal or an electron induced signal may be provided. The method may include providing a threshold number of events or a threshold event rate for a pixel on a detector. The method may include collecting from the detector the threshold number of events or determining that the threshold event rate is achieved, wherein a signal at the detector is an electron signal or an electron induced signal from a sample. The method may include modulating an intensity of an electron source directed to the sample in response.

公开(公告)号：US12100574B2

公开(公告)日：2024-09-24

申请号：US16918242

申请日：2020-07-01

Applicant: KLA CORPORATION

Inventor： Nadav Gutman ,  Oliver Ache ,  Carey Phelps

IPC: H01J37/22 ,  G03F7/00 ,  H01J37/20 ,  H01J37/244 ,  H01J37/28

CPC classification number: H01J37/222 ,  G03F7/70633 ,  G03F7/70683 ,  H01J37/20 ,  H01J37/244 ,  H01J37/28 ,  H01J2237/24475 ,  H01J2237/24578

Abstract: An overlay target includes a grating-over-grating structure with a bottom grating structure disposed on a specimen and a top grating structure disposed on the bottom grating structure. The overlay target further includes a calibration scan location including the bottom grating structure but not the top grating structure and an overlay scan location including the top grating structure and the bottom grating structure.

公开(公告)号：US20240304413A1

公开(公告)日：2024-09-12

申请号：US18597676

申请日：2024-03-06

Applicant: IMS Nanofabrication GmbH

Inventor： Christoph Spengler ,  Michael Haberler

IPC: H01J37/304 ,  H01J37/04 ,  H01J37/153 ,  H01J37/22 ,  H01J37/302 ,  H01J37/317

CPC classification number: H01J37/304 ,  H01J37/045 ,  H01J37/153 ,  H01J37/222 ,  H01J37/3023 ,  H01J37/3177 ,  H01J2237/0435 ,  H01J2237/31777

Abstract: The invention proposes adjusting the optical imaging system of a charged-particle multi-beam processing apparatus with regard to spatial and angular image distortion of the beam field, which describes the deviation of landing positions and landing angles of beamlets from respective nominal values within the beam field. Starting from a determination of the image distortion, so-called fingerprints are determined, which represent the change of image distortion effected by a unit change of a respective operating parameter of a component of the projection optics; then values of operating parameters are obtained which optimize a corrected distortion obtained from a superposition of the image distortion and a change of operating parameters that causes a variation of the image distortion, as expressed by a linear combination of said fingerprints. The optimizing values thus obtained are applied to the respective optical elements of the projection optics. The procedure may suitable be iterated until the distortion is suitably optimized.

公开(公告)号：US12080513B2

公开(公告)日：2024-09-03

申请号：US17633176

申请日：2020-08-08

Applicant: ASML Netherlands B.V.

Inventor： Wei Fang ,  Lingling Pu ,  Bo Wang ,  Zhonghua Dong ,  Yongxin Wang

IPC: H01J37/22 ,  G01N23/2251 ,  G06T5/50 ,  G06T5/77 ,  G06T5/80 ,  H01J37/24 ,  H01J37/244 ,  H01J37/28

CPC classification number: H01J37/222 ,  G01N23/2251 ,  G06T5/50 ,  G06T5/77 ,  G06T5/80 ,  H01J37/244 ,  H01J37/28 ,  G01N2223/07 ,  G01N2223/401 ,  G01N2223/418 ,  G01N2223/507 ,  G06T2207/10061 ,  G06T2207/20081 ,  H01J2237/2448 ,  H01J2237/2806 ,  H01J2237/2809 ,  H01J2237/2817

Abstract: An improved apparatus and method for enhancing an image, and more particularly an apparatus and method for enhancing an image through cross-talk cancellation in a multiple charged-particle beam inspection are disclosed. An improved method for enhancing an image includes acquiring a first image signal of a plurality of image signals from a detector of a multi-beam inspection system. The first image signal corresponds to a detected signal from a first region of the detector on which electrons of a first secondary electron beam and of a second secondary electron beam are incident. The method includes reducing, from the first image signal, cross-talk contamination originating from the second secondary electron beam using a relationship between the first image signal and beam intensities associated with the first secondary electron beam and the second secondary electron beam. The method further includes generating a first image corresponding to first secondary electron beam after reduction.

公开(公告)号：US12073541B2

公开(公告)日：2024-08-27

申请号：US17633133

申请日：2020-08-10

Applicant: THE BOARD OF REGENTS OF THE UNIVERSITY OF TEXAS SYSTEM

Inventor： Zbyszek Otwinowski ,  Raquel Bromberg ,  Dominika Borek

IPC: G06T5/80 ,  H01J37/22

CPC classification number: G06T5/80 ,  H01J37/222 ,  G06T2207/10061 ,  H01J2237/223 ,  H01J2237/2826

Abstract: Methods for correcting one or more image aberrations in an electron microscopy image, including cryo-EM images, are provided. The method includes obtaining a plurality of electron microscope (EM) images of an internal reference grid sample having one or more known properties, the plurality of electron microscope images obtained for a plurality of optical conditions and for a plurality of coordinated beam-image shifts. The method may also include, among other features, determining an aberration correction function that predicts aberrations for every point in the imaged area using kernel canonical correlation analysis (KCCA).

公开(公告)号：US20240249909A1

公开(公告)日：2024-07-25

申请号：US18099169

申请日：2023-01-19

Applicant: Applied Materials Israel Ltd.

Inventor： Yehuda Zur ,  Konstantin Chirko

IPC: H01J37/28 ,  H01J37/20 ,  H01J37/22 ,  H01J37/305

CPC classification number: H01J37/28 ,  H01J37/20 ,  H01J37/222 ,  H01J37/3056 ,  H01J2237/31749

Abstract: A method of evaluating, with an evaluation tool that includes a first charged particle column, a region of interest on a sample that includes an array of holes separated by solid portions, the method comprising: positioning the sample such that the region of interest is under a field of view of the first charged particle column; and locally depositing material within the array of holes in the region of interest by: pulsing a flow of deposition gas to the region of interest by turning the flow of the deposition gas ON and then OFF; thereafter, scanning a charged particle beam generated by the first charged particle column across the region of interest; and iteratively repeating the pulsing and scanning steps a plurality of times to locally deposit material within the array of holes in the region of interest.

公开(公告)号：US12046445B2

公开(公告)日：2024-07-23

申请号：US17625501

申请日：2020-06-29

Applicant: NuFlare Technology, Inc.

Inventor： Takuro Nagao

IPC: H01J37/22 ,  G06T3/40 ,  G06T7/00 ,  H01J37/28

CPC classification number: H01J37/222 ,  G06T3/40 ,  G06T7/001 ,  H01J37/28 ,  G06T2207/10061 ,  G06T2207/30148

Abstract: An electron beam inspection apparatus according to one aspect of the present invention includes an image acquisition mechanism to acquire a secondary electron image by scanning a substrate, on which a figure pattern is formed, with an electron beam, and detecting a secondary electron emitted due to irradiation with the electron beam by the scanning, a resize processing unit to perform, using design pattern data being a basis of the figure pattern, resize processing on the figure pattern to enlarge its size in a scan direction of the electron beam, a first developed image generation unit to generate, using the design pattern data which has not been resized, a first developed image by developing an image of a design pattern of a region corresponding to the secondary electron image, a second developed image generation unit to generate, using partial patterns enlarged by the resize processing in the figure pattern having been resized, a second developed image by developing an image of partial patterns in a region corresponding to the secondary electron image, a map generation unit to generate a pseudo defect candidate pixel map which can identify a pseudo defect candidate pixel that has no pattern in the first developed image and has a pattern in the second developed image, a reference image generation unit to generate a reference image of the region corresponding to the second electron image, and a comparison unit to compare, using the pseudo defect candidate pixel map, the second electron image with the reference image of the region corresponding to the second electron image.

公开(公告)号：US20240222064A1

公开(公告)日：2024-07-04

申请号：US18390046

申请日：2023-12-20

Applicant: Hitachi High-Tech Corporation

Inventor： Mayuka OSAKI ,  Shgunki Tsuboya ,  Hajime Kawano

IPC: H01J37/153 ,  H01J37/22 ,  H01J37/244 ,  H01J37/285 ,  H01J37/30 ,  H01J37/304

CPC classification number: H01J37/153 ,  H01J37/222 ,  H01J37/226 ,  H01J37/244 ,  H01J37/3005 ,  H01J37/3045 ,  H01J37/285 ,  H01J2229/507 ,  H01J2231/50047

Abstract: A multi-beam charged-particle microscope apparatus 100 includes an irradiation system 104 that irradiates a plurality of regions on a surface of a sample 9 with a plurality of beams, a detection system 125 (correction detector 132 and imaging detector 131) that detects emitted electrons from the surface of the sample 9, and a controller 102 that generates a first brightness of a first pixel in a first region based on a first signal of a first detector of a multi-detector 123 and generates a second brightness of a second pixel in a second region based on a second signal of a second detector. A processor of a processor system 103 that can communicate with the charged-particle microscope apparatus 100 specifies a first crosstalk amount from a second emitted electron to the first signal based on the first brightness obtained from the charged-particle microscope apparatus 100 and an output of the correction detector 132 and corrects the first brightness based on the first crosstalk amount.

公开(公告)号：US12001521B2

公开(公告)日：2024-06-04

申请号：US17285368

申请日：2019-09-09

Applicant: Hitachi High-Tech Corporation

Inventor： Heita Kimizuka ,  Natsuki Tsuno ,  Muneyuki Fukuda

IPC: G06F18/40 ,  G06T5/50 ,  G06T5/92 ,  G06T7/00 ,  H01J37/22 ,  H01J37/28

CPC classification number: G06F18/40 ,  G06T5/50 ,  G06T5/92 ,  G06T7/0004 ,  H01J37/222 ,  H01J37/28 ,  G06T2207/10061 ,  G06T2207/30148

Abstract: The present disclosure hereinafter proposes a charged particle beam device and a method for adjusting a charged particle beam device which aim to appropriately set device conditions independently of a state of a sample. The present disclosure proposes a method and a system for adjusting contrast and brightness of an image, comprising: adjusting offset (step 112) of a signal processing device of the charged particle beam device so that the brightness of a pattern in an image obtained by scanning with a first charged particle beam (first intermittent condition beam) becomes a predetermined value; and adjusting a gain (step 114) of the signal processing device so that the brightness of a pattern in an image obtained by scanning with a second charged particle beam, which is a pulse beam (second intermittent condition beam) different from the first charged particle beam in at least one of irradiation time, irradiation distance, interval time between irradiation points, and distance between irradiation points, becomes a predetermined value.

公开(公告)号：US20240177966A1

公开(公告)日：2024-05-30

申请号：US18432838

申请日：2024-02-05

Applicant: FIBICS INCORPORATED

Inventor： Michael William PHANEUF ,  Ken Guillaume LAGAREC

IPC: H01J37/26 ,  H01J37/22 ,  H01J37/28 ,  H01J37/30 ,  H01J37/304 ,  H01J37/305

CPC classification number: H01J37/26 ,  H01J37/222 ,  H01J37/28 ,  H01J37/3005 ,  H01J37/304 ,  H01J37/3045 ,  H01J37/3056 ,  G06T2207/10061 ,  H01J2237/226 ,  H01J2237/2811 ,  H01J2237/3174 ,  H01J2237/31749

Abstract: Linear fiducials with known angles relative to each other are formed such that their structures appear in a cross-sectional face of the sample as a distinct structure. Therefore, when imaging the cross-section face during the cross-sectioning operation, the distance between the identified structures allows unique identification of the position of the cross-section plane along the Z axis. Then a direct measurement of the actual position of each slice can be calculated, allowing for dynamic repositioning to account for drift in the plane of the sample and also dynamic adjustment of the forward advancement rate of the FIB to account for variations in the sample, microscope, microscope environment, etc. that contributes to drift. An additional result of this approach is the ability to dynamically calculate the actual thickness of each acquired slice as it is acquired.