公开(公告)号：US20170102924A1

公开(公告)日：2017-04-13

申请号：US15290491

申请日：2016-10-11

Applicant: Renesas Electronics America Inc.

Inventor： Brandon Cranford Hussey ,  Bhupesh Kharwa ,  Jon Matthew Brabender ,  Kristine M. Jassmann

IPC: G06F9/44 ,  G06F9/45

CPC classification number: G06F8/33 ,  G06F8/315 ,  G06F8/41 ,  G06F8/60 ,  G06F8/654 ,  G06F8/71 ,  G06F9/44505

Abstract: Provided herein are various systems, methods and architectures for enabling a microcontroller manufacturer to provide certain modification functionality to product vendors, while still maintaining the level of control needed to ensure that a product vendor does not inadvertently (or otherwise) create code that causes the microcontroller to not work properly. In one embodiment, this functionality can be performed through the steps of displaying an initial stack of software modules to a user, receiving instructions to modify the initial stack of software modules to create a modified stack of software modules, compiling the modified stack of software modules to produce compiled computer instructions, and flashing the embedded memory of the microcontroller with the compiled computer instructions.

公开(公告)号：US20160357562A1

公开(公告)日：2016-12-08

申请号：US14732044

申请日：2015-06-05

Applicant: Renesas Electronics America Inc.

Inventor： Jon Matthew Brabender

IPC: G06F9/30 ,  G06F9/54

CPC classification number: G06F9/30087 ,  G06F9/30145 ,  G06F9/46 ,  G06F9/542

Abstract: An apparatus and method for dynamically controlling functional aspects of an MCU. In one embodiment an MCU includes a central processing unit (CPU), a memory for storing instructions executable by the CPU, and a T/C channel coupled to receive control values generated by CPU and M event signals, wherein M is an integer greater than 1. The T/C channel is configured to select one or more of the M event signals based on the one or more of the control values. The T/C channel is configured to generate a control signal as a function of the selected one or more of the M event signals. A function of the T/C channel can be controlled by the control signal.

Abstract translation: 一种用于动态控制MCU功能方面的装置和方法。 在一个实施例中，MCU包括中央处理单元（CPU），用于存储可由CPU执行的指令的存储器和耦合以接收由CPU和M事件信号产生的控制值的T / C信道，其中M是大于 T / C信道被配置为基于一个或多个控制值来选择一个或多个M个事件信号。 T / C信道被配置为产生作为所选择的一个或多个M个事件信号的函数的控制信号。 T / C通道的功能可由控制信号控制。

公开(公告)号：US20160322901A1

公开(公告)日：2016-11-03

申请号：US15206990

申请日：2016-07-11

Applicant: Renesas Electronics America Inc.

Inventor： Tetsuo Sato ,  Tomoaki Uno ,  Hirokazu Kato ,  Nobuyoshi Matsuura

IPC: H02M3/158 ,  H01L29/423 ,  H02M1/08 ,  H01L29/40 ,  H03K7/08 ,  H01L29/78 ,  H01L29/49

CPC classification number: H02M3/158 ,  H01L27/0629 ,  H01L28/10 ,  H01L29/407 ,  H01L29/41766 ,  H01L29/42336 ,  H01L29/4916 ,  H01L29/7803 ,  H01L29/7813 ,  H02M1/08 ,  H02M1/44 ,  H03K7/08 ,  H03K17/162 ,  H03K17/165 ,  H03K2017/6878 ,  H03K2217/0036

Abstract: A trench MOSFET is disclosed that includes a semiconductor substrate having a vertically oriented trench containing a gate. The trench MOSFET further includes a source, a drain, and a conductive element. The conductive element, like the gate is contained in the trench, and extends between the gate and a bottom of the trench. The conductive element is electrically isolated from the source, the gate, and the drain. When employed in a device such as a DC-DC converter, the trench MOSFET may reduce power losses and electrical and electromagnetic noise.

公开(公告)号：US09401644B2

公开(公告)日：2016-07-26

申请号：US14666503

申请日：2015-03-24

Applicant: Renesas Electronics America Inc.

Inventor： Tetsuo Sato ,  Tomoaki Uno ,  Hirokazu Kato ,  Nobuyoshi Matsuura

IPC: H01L29/76 ,  H01L29/66 ,  H01L21/02 ,  H01L21/31 ,  H02M3/158 ,  H01L29/40 ,  H01L29/417 ,  H01L29/78 ,  H01L27/06 ,  H01L49/02 ,  H02M1/44 ,  H03K17/16 ,  H03K17/687

CPC classification number: H02M3/158 ,  H01L27/0629 ,  H01L28/10 ,  H01L29/407 ,  H01L29/41766 ,  H01L29/42336 ,  H01L29/4916 ,  H01L29/7803 ,  H01L29/7813 ,  H02M1/08 ,  H02M1/44 ,  H03K7/08 ,  H03K17/162 ,  H03K17/165 ,  H03K2017/6878 ,  H03K2217/0036

Abstract: A trench MOSFET is disclosed that includes a semiconductor substrate having a vertically oriented trench containing a gate. The trench MOSFET further includes a source, a drain, and a conductive element. The conductive element, like the gate is contained in the trench, and extends between the gate and a bottom of the trench. The conductive element is electrically isolated from the source, the gate, and the drain. When employed in a device such as a DC-DC converter, the trench MOSFET may reduce power losses and electrical and electromagnetic noise.

公开(公告)号：US20150077062A1

公开(公告)日：2015-03-19

申请号：US14552894

申请日：2014-11-25

Applicant: Renesas Electronics America Inc.

Inventor： Tetsuo Sato ,  Tsutomu Kawano ,  Koji Kashimoto ,  Takao Hidaka ,  Tsuyoshi Otal ,  Ryoji Kato

IPC: H02J7/00

CPC classification number: H02J7/0047 ,  G01R19/0092 ,  G01R31/3606 ,  G01R31/3686 ,  H02J7/00 ,  H02J7/0031 ,  H02J7/0068 ,  H02J2007/0037 ,  H02J2007/004

Abstract: A battery management method and apparatus. In one embodiment of the method, a source current is divided into Ic and Icr. Ic is transmitted to and charges a battery. A first voltage is generated that is related to Icr. The first voltage is converted into a first digital signal. A processing unit receives and processes the first digital signal in accordance with instructions stored in a memory. The transmission of Ic to the battery is interrupted in response to the processing unit processing the first digital signal. Current provided by the battery is divided into Idc and Idcr. Idc is transmitted to a device. A second voltage is generated that is related to Idcr. The second voltage is converted into a second digital signal. The processing unit receives and processes the second digital signal in accordance with instructions stored in the memory. The transmission of Idc to the battery is interrupted in response to the processing unit processing the second digital signal.

Abstract translation: 一种电池管理方法和装置。 在该方法的一个实施例中，源电流被分为Ic和Icr。 Ic被传输到电池并对其充电。 产生与Icr有关的第一个电压。 第一电压被转换成第一数字信号。 处理单元根据存储在存储器中的指令接收并处理第一数字信号。 响应于处理单元处理第一数字信号，Ic对电池的传输中断。 电池提供的电流分为Idc和Idcr。 Idc被发送到设备。 产生与Idcr相关的第二电压。 第二电压被转换为第二数字信号。 处理单元根据存储在存储器中的指令接收和处理第二数字信号。 响应于处理单元处理第二数字信号，Idc到电池的传输被中断。

公开(公告)号：US12301217B2

公开(公告)日：2025-05-13

申请号：US18064340

申请日：2022-12-12

Applicant: RENESAS ELECTRONICS AMERICA INC.

Inventor： Tetsuo Sato

IPC: H03K17/082 ,  H03K17/042 ,  H02M1/08

Abstract: Semiconductor devices for driving transistors in a power device are described. A semiconductor device can include a voltage source configured to provide a fixed bias voltage to a first device implemented as a common gate device. The semiconductor device can further include a second device connected in series with the first device. The current output of the second device can be connected to a source terminal of the first device. The semiconductor device can further include a driver configured to drive the second device to perform current control on the first device.

公开(公告)号：US12289193B2

公开(公告)日：2025-04-29

申请号：US18320570

申请日：2023-05-19

Applicant: Renesas Electronics America Inc.

Inventor： Damla Solmaz Acar ,  Mihail Jefremow ,  Jure Menart ,  Pooja Agrawal ,  Amit Bavisi ,  Gustavo James Mehas

IPC: H04L1/02 ,  H04B5/79 ,  H04L27/36 ,  H04B5/24

Abstract: Systems and methods for demodulating a signal is described. A device can receive a modulated signal that encodes data. The device can sample a voltage of the modulated signal to generate a plurality of samples in digital domain. The device can determine in-phase data and quadrature data of the plurality of samples. The device can determine amplitude data and phase data based on the in-phase data and the quadrature data. The device can decode the amplitude data and phase data into digital symbols that represent the data encoded in the modulated signal.

公开(公告)号：US12278508B2

公开(公告)日：2025-04-15

申请号：US16901673

申请日：2020-06-15

Applicant: Renesas Electronics America Inc.

Inventor： Yen-Mo Chen ,  Sungkeun Lim ,  Qian Sun

IPC: H02J7/00 ,  H02J3/38

Abstract: A battery charger is described that can support multiple battery applications with a single USB type-C port. An architecture can include a single charger transferring power to multiple battery stacks. The architecture can include a plurality of battery stacks each respectively housed in a distinct electronic device. The architecture is expandable from one charger with one USB type-C port coupled to a plurality of battery stacks, to a plurality of chargers with respective USB type-C ports all coupled to a plurality of battery stacks respectively housed in distinct electronic devices.

公开(公告)号：US12276532B2

公开(公告)日：2025-04-15

申请号：US17319659

申请日：2021-05-13

Applicant: Renesas Electronics America Inc.

Inventor： Gustavo James Mehas ,  Damla Acar ,  Ashley De Wolfe ,  Pooja Agrawal ,  Nicholaus Wayne Smith

IPC: G01D5/20 ,  G06F3/03 ,  H04M1/02

Abstract: A method and a system may inductively determine a position of a display screen of a computing device. Associated processes may generate a magnetic field by providing an alternating current to a driver coil, and may generate a voltage at a sensor coil in response to the magnetic field. The system and method may additionally include determining a linear position of the display screen by executing an algorithm at a processor. An input to the algorithm may include voltage data associated with the voltage generated at the sensor coil. The linear position of the display screen may correspond to a size of the display screen between a minimum size and a maximum size.

公开(公告)号：US20250088182A1

公开(公告)日：2025-03-13

申请号：US18463717

申请日：2023-09-08

Applicant: Renesas Electronics America Inc.

Inventor： Steven Ernest FINN ,  Chan Youn WON ,  Suresh ATLURI

IPC: H03K5/04 ,  H03K17/687

Abstract: Systems and methods for operating a driver circuit are described. In a first region of a transition from an input signal to an output signal, a circuit can control a slew rate of the output signal to a first rate. The first region can terminate prior to the output signal reaching a predefined threshold voltage. In a second region of the transition, the circuit can reduce the slew rate of the output signal to a second rate lower than the first rate. The output signal crosses the predefined threshold voltage in the second region. In a third region of the transition, the circuit can increase the slew rate of the output signal to a third rate greater than the second rate. The transition can complete in the third region. The circuit can output the output signal to drive a transistor in an output drive stage of the driver circuit.