公开(公告)号：US10274370B2

公开(公告)日：2019-04-30

申请号：US14825728

申请日：2015-08-13

Applicant: ASML Netherlands B.V.

Inventor： Arie Jeffrey Den Boef

IPC: G01J3/00 ,  G03F5/00 ,  G03F7/00 ,  G01N21/00 ,  G01J3/44 ,  G03F7/20 ,  G02B5/20 ,  G03F9/00 ,  G01N21/956 ,  G01N21/95 ,  G01N21/47

Abstract: A spectroscopic scatterometer detects both zero order and higher order radiation diffracted from an illuminated spot on a target grating. The apparatus forms and detects a spectrum of zero order (reflected) radiation, and separately forms and detects a spectrum of the higher order diffracted radiation. Each spectrum is formed using a symmetrical phase grating, so as to form and detect a symmetrical pair of spectra. The pair of spectra can be averaged to obtain a single spectrum with reduced focus sensitivity. Comparing the two spectra can yield information for improving height measurements in a subsequent lithographic step. The target grating is oriented obliquely so that the zero order and higher order radiation emanate from the spot in different planes. Two scatterometers can operate simultaneously, illuminating the target from different oblique directions. A radial transmission filter reduces sidelobes in the spot and reduces product crosstalk.

公开(公告)号：US20190107781A1

公开(公告)日：2019-04-11

申请号：US16150879

申请日：2018-10-03

Applicant: Stichting VU ,  Stichting Nederlandse Wetenschappelijk Onderzoek Instituten ,  Universiteit van Amsterdam ,  ASML Netherlands B.V.

Inventor： Patricius Aloysius Jacobus TINNEMANS ,  Arie Jeffrey Den Boef ,  Armand Eugene Albert Koolen ,  Nitesh Pandey ,  Vasco Tomas Tenner ,  Willem Marie Julia Marcel Coene ,  Patrick Warnaar

IPC: G03F7/20 ,  G03F9/00 ,  G01N21/47 ,  G01N21/95

Abstract: Described is a metrology system for determining a characteristic of interest relating to at least one structure on a substrate, and associated method. The metrology system comprises a processor being configured to computationally determine phase and amplitude information from a detected characteristic of scattered radiation having been reflected or scattered by the at least one structure as a result of illumination of said at least one structure with illumination radiation in a measurement acquisition, and use the determined phase and amplitude to determine the characteristic of interest.

公开(公告)号：US20190004437A1

公开(公告)日：2019-01-03

申请号：US16010320

申请日：2018-06-15

Applicant: ASML NETHERLANDS B.V.

Inventor： Kaustuve Bhattacharyya ,  Simon Gijsbert Josephus Mathijssen ,  Marc Johannes Noot ,  Arie Jeffrey Den Boef ,  Mohammadreza Hajiahmadi ,  Farzad Farhadzadeh

IPC: G03F7/20 ,  G01B11/27

CPC classification number: G03F7/70625 ,  G01B11/272 ,  G01B2210/56 ,  G03F7/70058 ,  G03F7/70633

Abstract: A method including: for a metrology target, having a first biased target structure and a second differently biased target structure, created using a patterning process, obtaining metrology data including signal data for the first target structure versus signal data for the second target structure, the metrology data being obtained for a plurality of different metrology recipes and each metrology recipe specifying a different parameter of measurement; determining a statistic, fitted curve or fitted function through the metrology data for the plurality of different metrology recipes as a reference; and identifying at least two different metrology recipes that have a variation of the collective metrology data of the at least two different metrology recipes from a parameter of the reference that crosses or meets a certain threshold.

公开(公告)号：US10133188B2

公开(公告)日：2018-11-20

申请号：US15387431

申请日：2016-12-21

Applicant: ASML NETHERLANDS B.V.

Inventor： Martin Jacobus Johan Jak ,  Arie Jeffrey Den Boef ,  Martin Ebert

IPC: G03F7/20 ,  G01B11/26 ,  G01N21/95 ,  G01N21/21 ,  G01N21/47 ,  G02B5/18 ,  G03F9/00

Abstract: A method, involving illuminating at least a first periodic structure of a metrology target with a first radiation beam having a first polarization, illuminating at least a second periodic structure of the metrology target with a second radiation beam having a second different polarization, combining radiation diffracted from the first periodic structure with radiation diffracted from the second periodic structure to cause interference, detecting the combined radiation using a detector, and determining a parameter of interest from the detected combined radiation.

公开(公告)号：US10067068B2

公开(公告)日：2018-09-04

申请号：US15388463

申请日：2016-12-22

Applicant: ASML Netherlands B.V.

Inventor： Arie Jeffrey Den Boef ,  Simon Gijsbert Josephus Mathijssen ,  Nan Lin ,  Sander Bas Roobol

IPC: G03F7/20 ,  G03F9/00 ,  G01N21/88

Abstract: A lithographic apparatus is a machine that applies a desired pattern onto a substrate, usually onto a target portion of the substrate. A lithographic apparatus can be used, for example, in the manufacture of integrated circuits (ICs). The lithographic apparatus has an inspection apparatus with an illumination system that utilizes illuminating radiation with a wavelength of 2-40 nm. The illumination system includes an optical element that splits the illuminating radiation into a first and a second illuminating radiation and induces a time delay to the first or the second illuminating radiation. A detector detects the radiation that has been scattered by a target structure. The inspection apparatus has a processing unit operable to control a time delay between the first scattered radiation and the second scattered radiation so as to optimize a property of the combined first and second scattered radiation.

公开(公告)号：US20180195857A1

公开(公告)日：2018-07-12

申请号：US15913253

申请日：2018-03-06

Applicant: ASML Netherlands B.V.

Inventor： Henricus Petrus Maria Pellemans ,  Arie Jeffrey Den Boef

IPC: G01B11/24 ,  G03F7/20

CPC classification number: G01B11/24 ,  G03F7/70191 ,  G03F7/70633 ,  G03F7/7085

Abstract: A device manufacturing method is disclosed. A radiated spot is directed onto a target pattern formed on a substrate. The radiated spot is moved along the target pattern in a series of discrete steps, each discrete step corresponding to respective positions of the radiated spot on the target pattern. Measurement signals are generated that correspond to respective ones of the positions of the radiated spot on the target pattern. A single value is determined that is based on the measurement signals and that is representative of the property of the substrate.

公开(公告)号：US09990462B2

公开(公告)日：2018-06-05

申请号：US15339669

申请日：2016-10-31

Applicant: ASML NETHERLANDS B.V.

Inventor： Christophe David Fouquet ,  Bernardo Kastrup ,  Arie Jeffrey Den Boef ,  Johannes Catharinus Hubertus Mulkens ,  James Benedict Kavanagh ,  James Patrick Koonmen ,  Neal Patrick Callan

IPC: G06F17/50 ,  H01L21/66 ,  G03F7/20 ,  G06N7/00

CPC classification number: G06F17/5081 ,  G03F7/705 ,  G03F7/70525 ,  G03F7/7065 ,  G06F17/5009 ,  G06N7/005 ,  H01L22/20

Abstract: Disclosed herein is a computer-implemented defect prediction method for a device manufacturing process involving processing a portion of a design layout onto a substrate, the method comprising: identifying a hot spot from the portion of the design layout; determining a range of values of a processing parameter of the device manufacturing process for the hot spot, wherein when the processing parameter has a value outside the range, a defect is produced from the hot spot with the device manufacturing process; determining an actual value of the processing parameter; determining or predicting, using the actual value, existence, probability of existence, a characteristic, or a combination thereof, of a defect produced from the hot spot with the device manufacturing process.

公开(公告)号：US09952518B2

公开(公告)日：2018-04-24

申请号：US15105339

申请日：2014-11-14

Applicant: ASML Netherlands B.V.

Inventor： Arie Jeffrey Den Boef

IPC: G03F7/20 ,  G01N21/956 ,  G01N21/47 ,  G01N21/88

CPC classification number: G03F7/70625 ,  G01B2210/56 ,  G01N21/4788 ,  G01N21/956 ,  G01N2021/8845 ,  G03F7/70616

Abstract: Disclosed are an inspection method and apparatus and an associated lithographic apparatus. The inspection method comprises illuminating a structure with inspection radiation of a selected wavelength, the structure being of a type comprising a plurality of layers (for example a 3D memory structure). The resultant diffraction signal is detected a physical property of a subset of said layers is determined from said diffraction signal. The subset of layers for which said physical property is determined is dependent upon the selected wavelength of the inspection radiation.

公开(公告)号：US09927726B2

公开(公告)日：2018-03-27

申请号：US15023075

申请日：2014-09-11

Applicant: ASML Netherlands B.V. ,  ASML Holding N.V.

Inventor： Patricius Aloysius Jacobus Tinnemans ,  Arie Jeffrey Den Boef ,  Justin Lloyd Kreuzer ,  Simon Gijsbert Josephus Mathijssen

IPC: G01B11/00 ,  G03F9/00 ,  G01B9/02 ,  G01B11/27

CPC classification number: G03F9/7069 ,  G01B9/02011 ,  G01B9/02015 ,  G01B11/272 ,  G01B2290/70 ,  G03F9/7049 ,  G03F9/7088

Abstract: Apparatus, systems, and methods are used for detecting the alignment of a feature on a substrate using a polarization independent interferometer. The apparatus, system, and methods include optical elements that receive light that has diffracted or scattered from a mark on a substrate. The optical elements may split the diffracted light into multiple subbeams of light which are detected by one or more detectors. The diffracted light may be combined optically or during processing after detection. The system may determine alignment and/or overlay based on the received diffracted light having any polarization angle or state.

公开(公告)号：US09857703B2

公开(公告)日：2018-01-02

申请号：US15328194

申请日：2015-07-07

Applicant: ASML Netherlands B.V. ,  ASML Holding N.V.

Inventor： Simon Gijsbert Josephus Mathijssen ,  Arie Jeffrey Den Boef ,  Justin Lloyd Kreuzer ,  Patricius Aloysius Jacobus Tinnemans

IPC: G03B27/54 ,  G03F9/00

CPC classification number: G03F9/7088 ,  G03F9/7065 ,  G03F9/7069

Abstract: An alignment sensor for a lithographic apparatus is arranged and constructed to measure an alignment of a movable part of the lithographic apparatus in respect of a stationary part of the lithographic apparatus. The alignment sensor comprises a light source configured to generate a pulse train at a optical wavelength and a pulse repetition frequency, a non-linear optical element, arranged in an optical propagation path of the pulse train, the non-linear optical element configured to transform the pulse train at the optical wavelength into a transformed pulse train in an optical wavelength range, an optical imaging system configured to project the transformed pulse train onto an alignment mark comprising a diffraction grating; a detector to detect a diffraction pattern as diffracted by the diffraction grating, and a data processing device configured to derive alignment data from the detected diffraction pattern as detected by the detector.