公开(公告)号：US09637379B2

公开(公告)日：2017-05-02

申请号：US14909105

申请日：2014-07-02

Applicant: EPCOS AG

Inventor： Marcel Giesen ,  Thomas Metzger ,  Phillip Ekkels ,  Ansgar Schäufele

IPC: B81C1/00 ,  G01L9/00 ,  H04R31/00 ,  B81C99/00

CPC classification number: B81C1/00682 ,  B81B2201/0257 ,  B81B2201/0264 ,  B81B2203/0127 ,  B81C1/00666 ,  B81C99/004 ,  G01L9/0073 ,  H04R31/003

Abstract: A method can be used for producing a microelectromechanical transducer. A plurality of microelectromechanical transducers are produced on a single wafer. Each transducer includes a diaphragm. The wafer is divided into at least a first and a second region. The mechanical tensions of a random sample of diaphragms of the first region are established and the values are compared with a predetermined desired value. The mechanical tensions of a random sample of diaphragms of the second region are established and the values are compared with the predetermined desired value. The tensions of the diaphragms in the first region are adjusted to the predetermined desired value, and the tensions of the diaphragms in the second region are adjusted to the predetermined desired value.

公开(公告)号：US20170087411A1

公开(公告)日：2017-03-30

申请号：US15230250

申请日：2016-08-05

Applicant: Chris Norcross Bender ,  Kay Daniel Vetter

Inventor： Chris Norcross Bender ,  Kay Daniel Vetter

IPC: A63B24/00 ,  G08B21/18 ,  G01L19/08 ,  G01L19/12 ,  A43B5/04 ,  A63B69/18

CPC classification number: A63B24/0062 ,  A43B3/0005 ,  A43B3/0015 ,  A43B3/0021 ,  A43B5/04 ,  A43B5/0415 ,  A63B69/18 ,  A63B2220/56 ,  A63C11/003 ,  A63C2203/18 ,  B81B2201/0264 ,  G01L19/083 ,  G01L19/12 ,  G09B19/0038 ,  H04W4/00 ,  H04W4/80

Abstract: A sport-boot pressure monitoring system and method of use. The system includes a left boot sensor having a left flexible fluid-containing bladder shaped to fit between a user's left leg and an interior surface of a left boot worn by the user and a left pressure sense element in pressure-sensing communication with the left flexible fluid-containing bladder, a right boot sensor that is similar to the left one, and a controller to provide a pressure alert if pressure between one of the user's legs and the interior surface of the boot worn on that leg violates a predetermined pressure threshold and to provide a proximity alert if a distance between the left and right boots violates a predetermined proximity threshold.

公开(公告)号：US20170081175A1

公开(公告)日：2017-03-23

申请号：US15248651

申请日：2016-08-26

Applicant: Infineon Technologies AG

Inventor： Matthias Steiert ,  Kok Yau Chua ,  Chu Hua Goh ,  Woon Yau Lim ,  Christina Yeong

IPC: B81B7/00 ,  B81C1/00

CPC classification number: B81B7/007 ,  B81B2201/0264 ,  B81C1/00301 ,  B81C1/00309 ,  B81C2203/0154 ,  H01L2224/16245 ,  H01L2924/1815

Abstract: The electronic device comprises a semiconductor chip comprising a first main face, a second main face opposite to the first main face, side faces connecting the first and second main faces, and a sensor element or actuator element disposed at the first main face, and a substrate, wherein the semiconductor chip is disposed above the substrate, the first main face of the semiconductor chip facing the substrate, wherein the substrate comprises a substrate opening, the substrate opening permitting passage of signals to the sensor element or from the actuator element.

公开(公告)号：US09598276B2

公开(公告)日：2017-03-21

申请号：US14645741

申请日：2015-03-12

Applicant: Semiconductor Manufacturing International (Shanghai) Corporation

Inventor： Wei Xu ,  Guoan Liu

IPC: B81B7/02 ,  B81B7/00 ,  B81C1/00 ,  G01P15/125 ,  G01L9/00 ,  G01P15/08

CPC classification number: B81B7/007 ,  B81B7/02 ,  B81B2201/0235 ,  B81B2201/0264 ,  B81B2207/07 ,  B81B2207/096 ,  B81C1/0038 ,  B81C2203/01 ,  G01L9/0042 ,  G01P15/0802 ,  G01P15/125

Abstract: The present disclosure provides MEMS devices and their fabrication methods. A first dielectric layer is formed on a substrate including integrated circuits therein. One or more first metal connections and second metal connections are formed in the first dielectric layer and are electrically connected to the integrated circuits. A second dielectric layer is formed on the first dielectric layer. An acceleration sensor is formed in the second dielectric layer to electrically connect to the one or more first metal connections. One or more first metal vias are formed in the second dielectric layer to electrically connect to the second metal connections. A pressure sensor is formed on the second dielectric layer to electrically connect to the first metal vias. The MEMS devices provided by the present disclosure are compact in size through the integration of the acceleration sensor and the pressure sensor.

公开(公告)号：US09598275B2

公开(公告)日：2017-03-21

申请号：US14596967

申请日：2015-01-14

Applicant: MiraMEMS Sensing Technology Co., Ltd.

Inventor： Yu-Hao Chien ,  Li-Tien Tseng

IPC: B81B7/02 ,  B81C1/00 ,  H01L23/10 ,  B81B7/00

CPC classification number: B81B7/0041 ,  B81B7/02 ,  B81B2201/0264 ,  B81B2203/0315 ,  B81B2203/033 ,  B81B2207/012 ,  B81B2207/07 ,  B81B2207/094 ,  B81C1/00238 ,  B81C1/00293 ,  B81C2201/112 ,  B81C2203/0172 ,  B81C2203/0792 ,  H01L23/10 ,  H01L2924/1461

Abstract: A pressure sensor using the MEMS device comprises an airtight ring surrounding a chamber defined by the first substrate and the second substrate. The airtight ring extends from the upper surface of the second substrate to the surface between the first substrate and the second substrate and further breaks out the surface. The pressure sensor utilizes the airtight ring to retain the airtightness of the chamber. The manufacture method of the pressure sensor is also disclosed.

公开(公告)号：US20170073220A1

公开(公告)日：2017-03-16

申请号：US15074755

申请日：2016-03-18

Applicant: STMICROELECTRONICS S.R.L.

Inventor： Enri DUQI ,  Sebastiano CONTI

IPC: B81B7/00

CPC classification number: B81B7/0054 ,  B81B3/0051 ,  B81B7/0048 ,  B81B7/008 ,  B81B2201/0264 ,  B81C1/00325 ,  H01L2224/48091 ,  H01L2924/00014

Abstract: A MEMS device is provided with: a supporting base, having a bottom surface in contact with an external environment; a sensor die, which is of semiconductor material and integrates a micromechanical detection structure; a sensor frame, which is arranged around the sensor die and is mechanically coupled to a top surface of the supporting base; and a cap, which is arranged above the sensor die and is mechanically coupled to a top surface of the sensor frame, a top surface of the cap being in contact with an external environment. The sensor die is mechanically decoupled from the sensor frame.

Abstract translation: MEMS装置设置有：支撑基座，其具有与外部环境接触的底面; 传感器芯片，其是半导体材料并且集成了微机械检测结构; 传感器框架，其布置在所述传感器模具周围并且机械地联接到所述支撑基座的顶表面; 以及盖，其布置在传感器模具的上方并且机械地联接到传感器框架的顶表面，盖的顶表面与外部环境接触。 传感器模具与传感器框架机械分离。

公开(公告)号：US09593009B2

公开(公告)日：2017-03-14

申请号：US14515304

申请日：2014-10-15

Applicant: Infineon Technologies AG

Inventor： Edward Fuergut ,  Horst Theuss ,  Rainer Leuschner

IPC: B81B7/00 ,  H04R19/00 ,  H04R31/00 ,  B81C1/00 ,  B81B3/00 ,  H01L23/00

CPC classification number: B81B7/0041 ,  B81B3/0021 ,  B81B2201/0257 ,  B81B2201/0264 ,  B81B2203/0127 ,  B81C1/00253 ,  H01L24/19 ,  H01L24/96 ,  H01L2224/04105 ,  H01L2224/12105 ,  H01L2224/24137 ,  H01L2924/12042 ,  H01L2924/1301 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2924/1461 ,  H01L2924/181 ,  H04R19/005 ,  H04R31/006 ,  H04R2201/003 ,  H01L2924/00

Abstract: A system and a method for forming a packaged MEMS device are disclosed. In one embodiment a packaged MEMS device includes a MEMS device having a first main surface with a first area along a first direction and a second direction, a membrane disposed on the first main surface of the MEMS device and a backplate adjacent to the membrane. The packaged MEMS device further includes an encapsulation material that encapsulates the MEMS device and that defines a back volume, the back volume having a second area along the first direction and the second direction, wherein the first area is smaller than the second area.

Abstract translation: 公开了一种用于形成封装的MEMS器件的系统和方法。 在一个实施例中，封装的MEMS器件包括具有第一主表面的MEMS器件，第一主表面具有沿着第一方向的第一区域和第二方向，设置在MEMS器件的第一主表面上的膜和邻近膜的背板。 封装的MEMS器件还包括封装MEMS器件并且限定后部体积的封装材料，后部体积具有沿第一方向和第二方向的第二区域，其中第一区域小于第二区域。

公开(公告)号：US09586813B2

公开(公告)日：2017-03-07

申请号：US14804691

申请日：2015-07-21

Applicant: Fairchild Semiconductor Corporation

Inventor： Janusz Bryzek ,  John Gardner Bloomsburgh ,  Cenk Acar

IPC: B81B7/00 ,  B81C1/00 ,  H01L23/48 ,  H05K1/18

CPC classification number: B81B7/008 ,  B81B2201/0235 ,  B81B2201/0242 ,  B81B2201/0264 ,  B81B2207/07 ,  B81C1/0023 ,  H01L23/481 ,  H01L2224/131 ,  H01L2924/1461 ,  H05K1/18 ,  H01L2924/014 ,  H01L2924/00

Abstract: This document refers to multi-die micromechanical system (MEMS) packages. In an example, a multi-die MEMS package can include a controller integrated circuit (IC) configured to couple to a circuit board, a MEMS IC mounted to a first side of the controller IC, a through silicon via extending through the controller IC between the first side and a second side of the controller IC, the second side opposite the first side, and wherein the MEMS IC is coupled to the through silicon via.

Abstract translation: 本文件涉及多模微机械系统（MEMS）封装。 在一个示例中，多管芯MEMS封装可以包括被配置为耦合到电路板的控制器集成电路（IC），安装到控制器IC的第一侧的MEMS IC，穿过控制器IC的贯穿硅通孔 控制器IC的第一侧和第二侧，与第一侧相对的第二侧，并且其中MEMS IC耦合到通过硅通孔。

公开(公告)号：US20170057815A1

公开(公告)日：2017-03-02

申请号：US14833871

申请日：2015-08-24

Applicant: Infineon Technologies AG

Inventor： Klaus Elian ,  Horst Theuss

IPC: B81C1/00 ,  B81B7/00 ,  H01L21/56

CPC classification number: H01L21/563 ,  B81B7/0038 ,  B81B7/0058 ,  B81B2201/0264 ,  B81B2207/012 ,  B81C1/00285 ,  B81C2203/0118 ,  H01L2224/48091 ,  H01L2924/00014

Abstract: A first semiconductor substrate having at least one integrated semiconductor device is provided. A lift-off layer is formed on a main surface of the first semiconductor substrate. The lift-off layer is patterned so as to form openings in the lift-off layer that are arranged on either side of a first portion of the lift-off layer. The first substrate is connected together with a second substrate by an interconnect structure to form an assembly with the main surface of the first semiconductor substrate being exposed. Exposed surfaces of the assembly are coated with a parylene coating, with a first portion of the parylene coating being supported by the first portion of the lift-off layer. The first portion of the parylene coating is selectively removed using a lift-off technique that removes the first portion of the lift-off layer. The lift-off technique is performed after connecting the first substrate and second substrates together.

Abstract translation: 提供具有至少一个集成半导体器件的第一半导体衬底。 在第一半导体衬底的主表面上形成剥离层。 剥离层被图案化以在剥离层中形成布置在剥离层的第一部分的任一侧上的开口。 第一衬底通过互连结构与第二衬底连接在一起，以形成暴露第一半导体衬底的主表面的组件。 组件的暴露表面涂覆有聚对二甲苯涂层，聚对二甲苯涂层的第一部分由剥离层的第一部分支撑。 使用去除剥离层的第一部分的剥离技术选择性地除去聚对二甲苯涂层的第一部分。 在将第一基板和第二基板连接在一起之后进行剥离技术。

公开(公告)号：US20170057814A1

公开(公告)日：2017-03-02

申请号：US15170154

申请日：2016-06-01

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chun-Wen Cheng ,  Chia-Hua Chu ,  Jung-Huei Peng

IPC: B81C1/00 ,  B81B7/00

CPC classification number: B81C1/00238 ,  B81B3/001 ,  B81B7/007 ,  B81B2201/0235 ,  B81B2201/0242 ,  B81B2201/0264 ,  B81B2203/0315 ,  B81B2207/012 ,  B81B2207/07 ,  B81C2201/0132 ,  B81C2203/035 ,  B81C2203/037 ,  B81C2203/0792 ,  H01L2224/16

Abstract: The present disclosure relates an integrated chip having one or more MEMS devices. In some embodiments, the integrated chip has a carrier substrate with one or more cavities disposed within a first side of the carrier substrate. A dielectric layer is disposed between the first side of the carrier substrate and a first side of a micro-electromechanical system (MEMS) substrate. The dielectric layer has sidewalls that are laterally set back from sidewalls of openings extending through the MEMs substrate to the one or more cavities. A bonding structure, including an intermetallic compound having a plurality of metallic elements, abuts a second side of the MEMS substrate and is electrically connected to a metal interconnect layer within a dielectric structure disposed over a CMOS substrate.

Abstract translation: 本公开涉及具有一个或多个MEMS器件的集成芯片。 在一些实施例中，集成芯片具有载体衬底，其具有设置在载体衬底的第一侧内的一个或多个空腔。 电介质层设置在载体衬底的第一侧和微机电系统（MEMS）衬底的第一侧之间。 电介质层具有侧壁，该侧壁从延伸穿过MEM衬底的开口的侧壁横向设置到一个或多个空腔。 包括具有多个金属元素的金属间化合物的接合结构邻接在MEMS基板的第二面上，并且电连接到设置在CMOS基板上的电介质结构内的金属互连层。