Abstract:
An on-chip optical phased array includes an array of photonic antenna units connected in series by photonic waveguides and arranged in a two-dimensional array to produce complex still and scanning optical patterns through optical interference effect. Each antenna unit includes an output photonic antenna (e.g. grating antenna), and a waveguide phase shifter for adjusting the optical phase of the optical beam output by the antenna unit. The grating antenna and the waveguide phase shifter are formed in the same optical wave guiding layer which includes a core layer between two cladding layers. The grating antennas may be a shallow-etched structure or a deep-etched edge-modulated grating. The optical phased array, including the array of photonic antenna units and the electrodes that connect and provide electrical power to them, can be made on a single chip of silicon using complementary metal-oxide-semiconductor (CMOS) or compatible fabrication processes.
Abstract:
An electro-holographic light field generator device comprises surface acoustic wave (SAW) optical modulators arranged in different directions. Specifically, some embodiments have SAW modulators arranged in pairs, nose-to-nose with each other, and have output couplers that provide face-fire light emission. These SAW modulators also possibly include SAW sense transducers and/or viscoelastic surface material to reduce crosstalk.
Abstract:
In a terahertz wave generation apparatus including a first non-linear optical crystal 3 on which first laser L1 and second laser L2 from laser generation means 2 are incident to generate terahertz wave TH1, the laser generation means includes a second non-linear optical crystal 7 on which laser having the same wavelength as that of the second laser is incident to generate idler light L1 including a plurality of wavelengths, and makes the idler light L1 generated from the second non-linear optical crystal incident on the first non-linear optical crystal as the first laser L1, to generate terahertz wave including a plurality of wavelengths from the first non-linear optical crystal 3, and wavelength selection means including a transmission section which transmits an idler light having the specific wavelength in the idler light including the plurality of wavelengths can be provided, as needed. Thus, terahertz wave having a high output power and including a plurality of wavelengths can be obtained, and the wavelength selection means easily obtains a required terahertz wave having the specific wavelength.
Abstract:
In a terahertz wave generation apparatus including a first non-linear optical crystal 3 on which first laser L1 and second laser L2 from laser generation means 2 are incident to generate terahertz wave TH1, the laser generation means includes a second non-linear optical crystal 7 on which laser having the same wavelength as that of the second laser is incident to generate idler light L1 including a plurality of wavelengths, and makes the idler light L1 generated from the second non-linear optical crystal incident on the first non-linear optical crystal as the first laser L1, to generate terahertz wave including a plurality of wavelengths from the first non-linear optical crystal 3, and wavelength selection means including a transmission section which transmits an idler light having the specific wavelength in the idler light including the plurality of wavelengths can be provided, as needed. Thus, terahertz wave having a high output power and including a plurality of wavelengths can be obtained, and the wavelength selection means easily obtains a required terahertz wave having the specific wavelength.
Abstract:
An electro-optic device may include a photonic chip having an optical grating coupler at a surface. The optical grating coupler may include a first semiconductor layer having a first base and first fingers extending outwardly from the first base. The optical grating coupler may include a second semiconductor layer having a second base and second fingers extending outwardly from the second base and being interdigitated with the first fingers to define semiconductor junction areas, with the first and second fingers having a non-uniform width. The electro-optic device may include a circuit coupled to the optical grating coupler and configured to bias the semiconductor junction areas and change one or more optical characteristics of the optical grating coupler.
Abstract:
An eye tracker having a waveguide for propagating illumination light towards an eye and propagating image light reflected from at least one surface of an eye, a light source optically coupled to the waveguide, and a detector optically coupled to the waveguide. Disposed in the waveguide is at least one grating lamina for deflecting the illumination light towards the eye along a first waveguide path and deflecting the image light towards the detector along a second waveguide path.
Abstract:
Embodiments of the invention utilize optical structures created by processes in the wafer fabrication foundry to form optical isolators and circulators. Grating coupling structures are utilized to couple light having a chosen polarization component into free space through non-reciprocal rotation material; said light is captured by another set of grating coupling structures after experiencing a 45 degree rotation of the polarization. By non-reciprocally rotating the polarization, the input and output ports of the optical isolator will be different depending on the direction of the light propagation.The amount of non-reciprocal rotation material utilized by embodiments of the invention may be small, and the grating coupling structures may be efficiently made to couple to each other as their field profiles may be matched and their position may be precisely defined by lithographic means.
Abstract:
Systems and methods for generating electromagnetic waves are provided. In one embodiment, a system for generating electromagnetic waves is provided. The system comprises a dielectric column comprising a spherical portion and at least one cylindrical portion, wherein the spherical portion receives a first wave from a first source and a second wave from a second source and generates a resulting electromagnetic wave along the interior of the cylindrical portion having a difference frequency caused by whispering gallery modes of the spherical portion, and the at least one cylindrical portion having at least one output for outputting the resulting electromagnetic wave.
Abstract:
Provided is a semiconductor integrated circuit. The semiconductor integrated circuit includes a semiconductor pattern disposed on a substrate and including an optical waveguide part and a pair of recessed portions. The optical waveguide part has a thickness ranging from about 0.05 m to about 0.5 μm. The recessed portions are disposed on both sides of the optical waveguide part and have a thinner thickness than the optical waveguide part. A first doped region and a second doped region are disposed in the recessed portions, respectively. The first and second doped regions are doped with a first conductive type dopant and a second conductive type dopant, respectively. An intrinsic region is formed in at least the optical waveguide part to contact the first and second doped regions.
Abstract:
Systems and methods for generating electromagnetic waves are provided. In one embodiment, a system for generating electromagnetic waves is provided. The system comprises a dielectric column comprising a spherical portion and at least one cylindrical portion, wherein the spherical portion receives a first wave from a first source and a second wave from a second source and generates a resulting electromagnetic wave along the interior of the cylindrical portion having a difference frequency caused by whispering gallery modes of the spherical portion, and the at least one cylindrical portion having at least one output for outputting the resulting electromagnetic wave.