公开(公告)号：US20020109105A1

公开(公告)日：2002-08-15

申请号：US09782424

申请日：2001-02-13

Inventor： Chien-Chih Lin ,  Michael WC Huang ,  Tien-Chang Chang

IPC: G21K005/10 ,  H01J037/08

CPC classification number: H01L21/2652

Abstract: The invention provides a method of ion implantation, comprising forming a shield layer over a provided substrate. After forming the shield layer, a photoresist layer is formed over the substrate and then patterned by photolithography and etching. Using the patterned photoresist layer as a mask, an ion implantation step is performed with a tilt angle of zero degree. Next, the shield layer can be removed simultaneously during the process of removing the photoresist layer.

Abstract translation: 本发明提供一种离子注入的方法，包括在所提供的衬底上形成屏蔽层。 在形成屏蔽层之后，在衬底上形成光致抗蚀剂层，然后通过光刻和蚀刻进行图案化。 使用图案化的光致抗蚀剂层作为掩模，以0度的倾斜角度进行离子注入步骤。 接下来，在去除光致抗蚀剂层的过程中可以同时去除屏蔽层。

公开(公告)号：US20020094483A1

公开(公告)日：2002-07-18

申请号：US10072880

申请日：2002-02-12

Applicant: Hitachi, Ltd.

Inventor： Takashi Hattori ,  Yasuko Gotoh ,  Hidetoshi Satoh ,  Toshihiko Tanaka ,  Hiroshi Shiraishi

IPC: H01J037/08 ,  G21K005/10 ,  G03C005/00 ,  G03F009/00

CPC classification number: G03F1/32 ,  G03F1/26 ,  G03F1/30 ,  G03F1/56

Abstract: To develop a small quantity of various kinds of semiconductor devices in a short time and to realize a photomask suitable to be manufactured at a low cost. A shade pattern of a photomask is constituted by containing nanoparticles such as carbon in an organic film such as a photoresist film. A pattern is transferred to a photoresist on a semiconductor wafer by means of the reduction projection exposure using the photomask. At the time of the above exposure, it is possible to select exposure light within a range of wide wavelengths including i-line, KrF excimer laser beam, ArF excimer laser beam, or the like.

Abstract translation: 为了在短时间内开发少量的各种半导体器件，并且实现了适合以低成本制造的光掩模。 光掩模的阴影图案通过在诸如光致抗蚀剂膜的有机膜中含有诸如碳的纳米颗粒而构成。 通过使用光掩模的还原投影曝光将图案转印到半导体晶片上的光刻胶上。 在上述曝光时，可以选择宽波长范围内的曝光光，包括i线，KrF准分子激光束，ArF准分子激光束等。

公开(公告)号：US20020050574A1

公开(公告)日：2002-05-02

申请号：US09882974

申请日：2001-06-15

Applicant: Board of Trustrees operating Michigan State University

Inventor： Lawrence T. Drzal ,  Michael J. Rich

IPC: G21K005/10 ,  H01J037/08

CPC classification number: D06M10/001 ,  B01J19/123 ,  B01J2219/0879 ,  B01J2219/0886 ,  B05D3/062 ,  B05D3/063 ,  B05D3/064 ,  B05D3/101 ,  B05D3/102 ,  B05D3/104 ,  B29C59/16 ,  B29C2035/0827 ,  C03C25/6226 ,  C04B41/0045 ,  C04B41/009 ,  D01F11/122 ,  D06M10/06 ,  D06M11/34 ,  G21K5/10 ,  H01B1/04 ,  C04B41/4519 ,  C04B41/4584 ,  C04B14/386

Abstract: A process using ultraviolet light having a wavelength of 160 to 500 nanometers without higher wavelengths and a high intensity between about 1 and 40 watts/cm2 to surface treat a carbon containing fiber is described. The treated fiber contains an enhanced amount of oxygen on the surface which significantly improves the bondability of the fiber in composites.

Abstract translation: 描述了使用波长为160-500纳米而不具有较高波长和约1-40瓦特/平方厘米之间的高强度的紫外光的表面处理含碳纤维的方法。 经处理的纤维在表面上含有增加的氧量，这显着提高了复合材料中纤维的粘合性。

公开(公告)号：US20020015900A1

公开(公告)日：2002-02-07

申请号：US09843622

申请日：2001-04-26

Applicant: Petersen Advanced Lithography, Inc.

Inventor： John S. Petersen

IPC: H01J037/08 ,  G21K005/10 ,  G06F017/50 ,  G03F009/00

CPC classification number: G03F1/32 ,  G03F1/29 ,  G03F1/30 ,  G03F1/36

Abstract: A system and method of strong phase-shifting a beam from an actinic light source in a lithographic process includes focusing a beam from the electromagnetic beam source onto a mask adapted to selectively phase-shift at least a portion of the beam according to a predetermined pattern. The beam is passed from the actinic light source through the mask producing a phase-shifted beam, and the phase-shifted beam is directed at a substrate such as a semiconductor wafer adapted to be selectively etched according to the predetermined pattern. The strong phase-shift serves to substantially eliminate zero-order light in the phase-shifted beam. Strong phase-shift mask techniques, through a two electromagnetic beam interference imaging process, are known in the art of microlithography to form imaging results for features of a size well below the limit of conventional prior art imaging.

Abstract translation: 在光刻工艺中将来自光化光源的光强相移的系统和方法包括将来自电磁光束源的光束聚焦到适于根据预定图案选择性地相移光束的至少一部分的掩模 。 光束从光化光源通过掩模产生相移光束，并且相移光束被引导到诸如半导体晶片的衬底，其适于根据预定图案被选择性地蚀刻。 强相移用于基本上消除相移光束中的零级光。 通过两个电磁束干涉成像过程的强相移掩模技术在微光刻技术中是已知的，以形成远远低于传统现有技术成像极限的特征的成像结果。

公开(公告)号：US20020000523A1

公开(公告)日：2002-01-03

申请号：US09252845

申请日：1999-02-19

Inventor： CHE-HOO NG ,  EMI ISHIDA ,  JAIME M. REYES ,  JINNING LIU ,  SANDEEP MEHTA

IPC: G21K005/10 ,  H01J037/08

CPC classification number: H01J27/08 ,  H01J37/08 ,  H01J2237/31701

Abstract: A method of increasing ion source lifetime in an ion implantation system uses the introduction of an inert gas, such as argon or xenon, into the halide-containing source gas. Inert gas constituents have a cleansing effect in the plasma ambient by enhancing sputtering.

Abstract translation: 在离子注入系统中增加离子源寿命的方法使用惰性气体（例如氩或氙）引入含卤素源气体中。 惰性气体组分通过增强溅射在等离子体环境中具有清洁效果。

公开(公告)号：US20010048083A1

公开(公告)日：2001-12-06

申请号：US09805223

申请日：2001-03-14

Applicant: NIKON CORPORATION

Inventor： Shigeru Hagiwara

IPC: G21K005/10 ,  H01J037/08

CPC classification number: G03F7/70883 ,  G03F7/70025 ,  G03F7/70575

Abstract: In the present invention, a light source portion including a laser resonator of a laser unit is housed in an environment control chamber where the main body of the exposure apparatus including a projection optical system is also housed, and temperature control of the main body of the exposure apparatus and the light source portion is performed so as to maintain the temperature of the entire optical system within the chamber uniform. Thus, the footprint of the apparatus can be reduced compared with when the whole laser unit is arranged separately from the main body of the exposure apparatus. Shift of the center wavelength and change in the spectral half-width and the degree of energy concentration can be avoided, and variation of image forming characteristics including the chromatic aberration of the projection optical system due to the wavelength shift can be suppressed to a minimum. Accordingly, with the exposure apparatus in the present invention, the productivity when producing a microdevice can be improved, and the production cost reduced.

Abstract translation: 在本发明中，包括激光单元的激光谐振器的光源部被容纳在也容纳投影光学系统的曝光装置的主体的环境控制室中，并且控制主体的温度 执行曝光装置和光源部分以将整个光学系统的温度保持在室内均匀。 因此，与将整个激光单元与曝光装置的主体分开布置时，可以减少装置的占地面积。 可以避免中心波长的偏移和光谱半宽度和能量集中度的变化，并且可以将包括由于波长偏移引起的投影光学系统的色像差的图像形成特性的变化抑制到最小。 因此，利用本发明的曝光装置，可以提高微型装置的生产率，降低生产成本。

公开(公告)号：US20010028981A1

公开(公告)日：2001-10-11

申请号：US09764162

申请日：2001-01-19

Inventor： Tomoyuki Okada ,  Yoshimasa Iiduka ,  Kazuhiko Takahashi ,  Masahiko Minemura

IPC: G03F009/00 ,  G21K005/10 ,  H01J037/08 ,  G21G005/00 ,  A61N005/00 ,  G03B027/58

CPC classification number: G03F1/36 ,  G03F7/70441 ,  H01J37/3026 ,  H01J2237/31769

Abstract: Provided is a computer 15 for producing corrected pattern data which includes corrected features each obtained by adding auxiliary features (serifs) to the right-angle corners of an original feature to compensate for the photo proximity effect. The computer performs the step of: (S1) inputting an original pattern data; (S2) adding triangle or rectangle serifs to right-angle corners of original features, each serif having a side which is an extension of a first side of a corresponding original feature and another side which is a portion of the side adjacent to the first side; (S3) performing a geometric OR operation on the original feature and the serifs to obtain a synthesized feature; and (S4) decomposing the synthesized feature into basic figures which can be processed in an electron beam exposure apparatus.

Abstract translation: 提供了一种用于产生校正图案数据的计算机15，其包括通过将原始特征的直角角添加辅助特征（衬线）而获得的校正特征，以补偿照片邻近效应。 计算机执行以下步骤：（S1）输入原始图案数据; （S2）向原始特征的直角角添加三角形或矩形衬线，每个衬线具有作为相应原始特征的第一侧的延伸的一侧，作为与第一侧相邻的一侧的一部分的另一侧 ; （S3）对原始特征和衬线执行几何或运算以获得合成特征; 和（S4）将合成特征分解为可在电子束曝光装置中处理的基本图形。

公开(公告)号：US20010008273A1

公开(公告)日：2001-07-19

申请号：US09758172

申请日：2001-01-12

Inventor： Rogier H.M. Groeneveld ,  Erik R. Loopstra ,  Jacobus Burghoom ,  Leon M. Levasier ,  Alexander Straaijer

IPC: G21K007/00 ,  G01N023/00 ,  G21K005/10 ,  H01J037/08

CPC classification number: G03F9/7019 ,  F41H7/04 ,  G03F9/7011 ,  G03F9/7034

Abstract: In a lithographic apparatus, a reference grating 11 mounted on the wafer table WT is illuminated with a measurement beam 20 incident in a direction independent of wafer table tilt. The diffraction orders are detected by detector 30 and used to determine the lateral shift in the wafer table resulting from a non-zero Abbe arm, and hence the Abbe arm, for calibration purposes. The detector 30 may be a detector also used for off-axis alignment of the wafer and wafer table.

Abstract translation: 在光刻设备中，安装在晶片台WT上的参考光栅11用独立于晶片台倾斜的方向入射的测量光束20照射。 衍射级由检测器30检测，用于确定由非零的阿贝臂以及因此用于校准目的的阿贝臂产生的晶片台中的横向偏移。 检测器30可以是也用于晶片和晶片台的离轴对准的检测器。

公开(公告)号：US20040224237A1

公开(公告)日：2004-11-11

申请号：US10431858

申请日：2003-05-08

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Tzy-Ying Lin ,  Chue-San Yoo ,  Chin-Wang Hu ,  Ming-Chih Hsieh ,  Ming-Feng Ho ,  Cheng-Hung Kung

IPC: G01B007/00 ,  G03F009/00 ,  G21K005/10 ,  G06F015/00 ,  G01B015/00 ,  H01J037/08

CPC classification number: G03F1/72

Abstract: A method for repairing a defective photomask having contained therein a minimum of one defect first provides forming a masking layer upon the defective photomask such as to leave exposed the minimum of one defect. Within the invention the minimum of one defect within the defective photomask may be repaired while employing the masking layer as a defect repair masking layer, to thus form a repaired photomask from the defective photomask. The method provides for efficient repairing of the defective photomask, absent transparent substrate damage.

Abstract translation: 在其中容纳最少一个缺陷的缺陷光掩模的修复方法首先提供在缺陷光掩模上形成掩模层，以便露出最小的一个缺陷。 在本发明中，可以在使用掩模层作为缺陷修复掩蔽层的同时修复缺陷光掩模内的一个缺陷的最小值，从而从有缺陷的光掩模形成修复的光掩模。 该方法提供了有缺陷的光掩模的有效修复，没有透明的基底损伤。

公开(公告)号：US20040188631A1

公开(公告)日：2004-09-30

申请号：US10825339

申请日：2004-04-15

Applicant: SemEquip, Inc.

Inventor： Thomas Neil Horsky ,  John Noel Williams

IPC: H01J027/02 ,  H01J037/08

CPC classification number: H01J37/3171 ,  C23C14/48 ,  H01J27/205 ,  H01J37/08 ,  H01J2237/047 ,  H01J2237/049 ,  H01J2237/063 ,  H01J2237/0812 ,  H01J2237/0815 ,  H01J2237/082 ,  H01J2237/083 ,  H01J2237/0835 ,  H01J2237/31701 ,  H01J2237/31703 ,  H01J2237/31705 ,  H01L21/26513 ,  H01L21/2658 ,  H01L21/823814

Abstract: Various aspects of the invention provide improved approaches and methods for efficiently: Vaporizing decaborane and other heat-sensitive materials via a novel vaporizer and vapor delivery system; Delivering a controlled, low-pressure drop flow of vapors, e.g. decaborane, into the ion source; Ionizing the decaborane into a large fraction of B10Hxnull; Preventing thermal dissociation of decaborane; Limiting charge-exchange and low energy electron-induced fragmentation of B10Hxnull; Operating the ion source without an arc plasma, which can improve the emittance properties and the purity of the beam; Operating the ion source without use of a strong applied magnetic field, which can improve the emittance properties of the beam; Using a novel approach to produce electron impact ionizations without the use of an arc discharge, by incorporation of an externally generated, broad directional electron beam which is aligned to pass through the ionization chamber to a thermally isolated beam dump; Providing production-worthy dosage rates of boron dopant at the wafer; Providing a hardware design that enables use also with other dopants, especially using novel hydride, dimer-containing, and indium- or antimony-containing temperature-sensitive starting materials, to further enhance the economics of use and production worthiness of the novel source design and in many cases, reducing the presence of contaminants; Matching the ion optics requirements of the installed base of ion implanters in the field; Eliminating the ion source as a source of transition metals contamination, by using an external and preferably remote cathode and providing an ionization chamber and extraction aperture fabricated of non-contaminating material, e.g. graphite, silicon carbide or aluminum; Enabling retrofit of the new ion source into the ion source design space of existing Bernas source-based ion implanters and the like or otherwise enabling compatibility with other ion source designs; Using a control system in retrofit installations that enables retention of the installed operator interface and control techniques with which operators are already familiar; Enabling convenient handling and replenishment of the solid within the vaporizer without substantial down-time of the implanter; Providing internal adjustment and control techniques that enable, with a single design, matching the dimensions and intensity of the zone in which ionization occurs to the beam line of the implanter and the requirement of the process at hand; Providing novel approaches, starting materials and conditions of operation that enable the making of future generations of semiconductor devices and especially CMOS source/drains and extensions, and doping of silicon gates.