公开(公告)号：US20040195521A1

公开(公告)日：2004-10-07

申请号：US10221545

申请日：2003-10-21

Inventor： Valery V. Alekseev ,  Vsevolod V. Zelenkov ,  Mark M. Krivoruchko ,  John E. Keem

IPC: H01J027/02

CPC classification number: H01J27/143

Abstract: A closed loop exit hole is formed in a magnetically permeable end wall (2) of an enclosure (1) of a closed electron drift ion source. Parts of this end wall separated by the exit hole serve as pole pieces (7 and 8) of the magnetic system and define the first pole gap. The magnetic system includes pole pieces (9 and 10), which define the second pole gap made in the form of a closed loop exit hole and arranged along the direction of ion emission. Magnetomotive force sources (5 and 6) are located in space between two groups of magnetic terminals. The ratio of width of each pole gap and distance between pole pieces of the first (7 and 8) and second (9 and 10) magnetic gaps along the direction of ion emission is not less than 0.05. The invention allows the intensity of the generated ion beam and the energy of ions to be increased, and this is provided by the homogeneous distribution of ion current density across the ion beam section.

Abstract translation: 在闭合电子漂移离子源的封闭体（1）的导磁性端壁（2）中形成闭环出口孔。 由出口孔分隔的端壁的部分用作磁性系统的极片（7和8）并限定第一极间隙。 磁性系统包括极片（9和10），其限定以闭环出口孔形式并沿着离子发射方向布置的第二极间隙。 磁动势源（5和6）位于两组磁性端子之间的空间中。 第一（7和8）和第二（9和10）磁隙的磁极间距离沿离子发射方向的每个磁极间隙的宽度与极片之间的距离比不小于0.05。 本发明允许产生的离子束的强度和离子的能量增加，并且这是通过离子束部分上的离子电流密度的均匀分布来提供的。

公开(公告)号：US20040079881A1

公开(公告)日：2004-04-29

申请号：US10640176

申请日：2003-08-13

Inventor： Steven M. Fischer ,  Darrell L. Gourley ,  James L. Bertsch

IPC: H01J049/10 ,  H01J027/02

CPC classification number: H01J49/107 ,  H01J49/0445 ,  H01J49/162 ,  H01J49/165 ,  H01J49/168

Abstract: The present invention provides an apparatus and method for use with a mass spectrometer. The multimode ionization source of the present invention provides one or more atmospheric pressure ionization sources (e.g., electrospray, atmospheric pressure chemical ionization and/or atmospheric pressure photoionization) for ionizing molecules. A method of producing ions using the multimode ionization source is also disclosed. The apparatus and method provide the advantages of the combined ion sources without the inherent disadvantages of the individual sources. In an embodiment, the multimode ionization source includes an infrared emitter enclosed in an inner chamber for drying a charged aerosol. ESI/APCI multimode sources may include a corona needle shield and/or an auxiliary electrode.

Abstract translation: 本发明提供了一种与质谱仪一起使用的装置和方法。 本发明的多模电离源提供用于电离分子的一个或多个大气压电离源（例如电喷雾，大气压化学电离和/或大气压光电离）。 还公开了使用多模电离源产生离子的方法。 该装置和方法提供了组合离子源的优点，而没有各个源的固有缺点。 在一个实施例中，多模式电离源包括封闭在内室中用于干燥带电气溶胶的红外发射器。 ESI / APCI多模式源可以包括电晕针护罩和/或辅助电极。

公开(公告)号：US20040104342A1

公开(公告)日：2004-06-03

申请号：US10699805

申请日：2003-11-04

Applicant: Hitachi., Ltd.

Inventor： Masuyoshi Yamada ,  Izumi Waki

IPC: H01J049/10 ,  H01J027/02

CPC classification number: H01J49/04 ,  G01N33/005 ,  H01M8/04082

Abstract: There will be provided a mass spectrometer for detecting impurity in sample gas of a low flow rate. A mass spectrometer including: an atmospheric pressure chemical ionization source having a primary ionization part 28 for generating a primary ion by means of electric discharge of reagent gas, and a secondary ionization part 23 for generating an ion of the sample by a reaction of the primary ion and the sample; a mass spectrometric part 11 for performing mass spectrometric analysis of the ion generated; a mixing portion 33 for mixing the sample to be introduced into the secondary ionization part with dilution gas; and a mean 30 for controlling a flow rate of the dilution gas for flowing through the mixing portion; and a mean 12-1 or 12-2 or 12-3 for controlling a flow rate of the sample gas, wherein mixed gas obtained by mixing the sample with the dilution gas is introduced into the secondary ionization part and the sample is ionized.

Abstract translation: 将提供用于检测低流量的样品气体中的杂质的质谱仪。 一种质谱仪，包括：大气压化学电离源，其具有通过反应气体的放电产生一次离子的一次离子化部28;以及二次离子化部23，其通过所述一次反应生成该样品的离子 离子和样品; 用于对生成的离子进行质谱分析的质谱部11; 混合部分33，用于将要引入二次电离部分的样品与稀释气体混合; 以及用于控制用于流过混合部分的稀释气体的流量的平均值30; 以及用于控制样品气体的流量的平均值12-1或12-2或12-3，其中通过将样品与稀释气体混合而获得的混合气体被引入二次电离部分，并且样品被离​​子化。

公开(公告)号：US20030038245A1

公开(公告)日：2003-02-27

申请号：US10180813

申请日：2002-06-25

Applicant: Ionfinity LLC

Inventor： Frank T. Hartley

IPC: H01J049/04 ,  H01J027/02

CPC classification number: F03H1/00 ,  H01J27/26 ,  H01J49/168 ,  Y10S977/89

Abstract: A field ionizing element formed of a membrane that houses electrodes therein that are located closer to one another than the mean free path of the gas being ionized. The membrane includes a supporting portion, and a non supporting portion where the ions are formed. The membrane may be used as the front end for a number of different applications including a mass spectrometer, a thruster, an ion mobility element, or an electrochemical device such as a fuel cell.

公开(公告)号：US20040188631A1

公开(公告)日：2004-09-30

申请号：US10825339

申请日：2004-04-15

Applicant: SemEquip, Inc.

Inventor： Thomas Neil Horsky ,  John Noel Williams

IPC: H01J027/02 ,  H01J037/08

CPC classification number: H01J37/3171 ,  C23C14/48 ,  H01J27/205 ,  H01J37/08 ,  H01J2237/047 ,  H01J2237/049 ,  H01J2237/063 ,  H01J2237/0812 ,  H01J2237/0815 ,  H01J2237/082 ,  H01J2237/083 ,  H01J2237/0835 ,  H01J2237/31701 ,  H01J2237/31703 ,  H01J2237/31705 ,  H01L21/26513 ,  H01L21/2658 ,  H01L21/823814

Abstract: Various aspects of the invention provide improved approaches and methods for efficiently: Vaporizing decaborane and other heat-sensitive materials via a novel vaporizer and vapor delivery system; Delivering a controlled, low-pressure drop flow of vapors, e.g. decaborane, into the ion source; Ionizing the decaborane into a large fraction of B10Hxnull; Preventing thermal dissociation of decaborane; Limiting charge-exchange and low energy electron-induced fragmentation of B10Hxnull; Operating the ion source without an arc plasma, which can improve the emittance properties and the purity of the beam; Operating the ion source without use of a strong applied magnetic field, which can improve the emittance properties of the beam; Using a novel approach to produce electron impact ionizations without the use of an arc discharge, by incorporation of an externally generated, broad directional electron beam which is aligned to pass through the ionization chamber to a thermally isolated beam dump; Providing production-worthy dosage rates of boron dopant at the wafer; Providing a hardware design that enables use also with other dopants, especially using novel hydride, dimer-containing, and indium- or antimony-containing temperature-sensitive starting materials, to further enhance the economics of use and production worthiness of the novel source design and in many cases, reducing the presence of contaminants; Matching the ion optics requirements of the installed base of ion implanters in the field; Eliminating the ion source as a source of transition metals contamination, by using an external and preferably remote cathode and providing an ionization chamber and extraction aperture fabricated of non-contaminating material, e.g. graphite, silicon carbide or aluminum; Enabling retrofit of the new ion source into the ion source design space of existing Bernas source-based ion implanters and the like or otherwise enabling compatibility with other ion source designs; Using a control system in retrofit installations that enables retention of the installed operator interface and control techniques with which operators are already familiar; Enabling convenient handling and replenishment of the solid within the vaporizer without substantial down-time of the implanter; Providing internal adjustment and control techniques that enable, with a single design, matching the dimensions and intensity of the zone in which ionization occurs to the beam line of the implanter and the requirement of the process at hand; Providing novel approaches, starting materials and conditions of operation that enable the making of future generations of semiconductor devices and especially CMOS source/drains and extensions, and doping of silicon gates.

公开(公告)号：US20040075060A1

公开(公告)日：2004-04-22

申请号：US10419990

申请日：2003-04-22

Inventor： Henry A. Luten ,  Vijayen S. Veerasamy ,  Maximo Frati ,  Denis Shaw

IPC: H01J027/02

CPC classification number: H01J27/143

Abstract: A method and/or system for cleaning an ion source is/are provided. In certain embodiments of this invention, both the anode and cathode of the ion source are negatively biased during at least part of a cleaning mode. Ions generated are directed toward the anode and/or cathode in order to remove undesirable build-ups from the same during cleaning.

公开(公告)号：US20030234371A1

公开(公告)日：2003-12-25

申请号：US10465729

申请日：2003-06-19

Inventor： Byron J. Ziegler

IPC: H01J027/02

CPC classification number: C23C14/48 ,  C23C14/0031 ,  C23C14/54

Abstract: The invention relates to devices and methods for generating reactive ions in thin layer chemistry vacuum or vapor chamber where the mixture and delivery of gas to an ion source controlled by a controller sensitive to the chemical make up in the vacuum or vapor chamber.

Abstract translation: 本发明涉及用于在薄层化学真空或蒸汽室中产生反应离子的装置和方法，其中将气体混合并输送到由对化学物质敏感的控制剂在真空或蒸气室中组成的离子源。