-
公开(公告)号：US11848284B2
公开(公告)日：2023-12-19
申请号：US17834737
申请日：2022-06-07
Inventor： Javier A DeLaCruz , Belgacem Haba , Rajesh Katkar
IPC: H01L23/00 , H01L21/66 , H01L23/528
CPC classification number: H01L23/573 , H01L22/34 , H01L23/528 , H01L23/562 , H01L24/05 , H01L24/08 , H01L24/27 , H01L24/29 , H01L24/32 , H01L24/48 , H01L24/73 , H01L24/83 , H01L24/49 , H01L2224/08237 , H01L2224/29082 , H01L2224/29187 , H01L2224/32225 , H01L2224/48091 , H01L2224/48106 , H01L2224/48225 , H01L2224/49171 , H01L2224/73215
Abstract: A bonded structure is disclosed. The bonded structure can include a semiconductor element comprising active circuitry. The bonded structure can include a protective element directly bonded to the semiconductor element without an adhesive along a bonding interface. The protective element can include an obstructive material disposed over at least a portion of the active circuitry. The obstructive material can be configured to obstruct external access to the active circuitry. The bonded structure can include a disruption structure configured to disrupt functionality of the at least a portion of the active circuitry upon debonding of the protective element from the semiconductor element.
-
公开(公告)号：US20230395544A1
公开(公告)日：2023-12-07
申请号：US18339964
申请日：2023-06-22
Inventor： Javier A. DeLaCruz , Belgacem Haba , Jung Ko
IPC: H01L23/00 , H01L25/065 , G01R31/28 , G01R31/27
CPC classification number: H01L24/06 , H01L25/0657 , G01R31/2856 , G01R31/275 , H01L24/08
Abstract: A bonded structure is disclosed. The bonded structure can include a first element that has a first plurality of contact pads. The first plurality of contact pads includes a first contact pad and a second redundant contact pad. The bonded structure can also include a second element directly bonded to the first element without an intervening adhesive. The second element has a second plurality of contact pads. The second plurality of contact pads includes a third contact pad and a fourth redundant contact pad. The first contact pad is configured to connect to the third contact pad. The second contact pad is configured to connect to the fourth contact pad. The bonded structure can include circuitry that has a first state in which an electrical signal is transferred to the first contact pad and a second state in which the electrical signal is transferred to the second contact pad.
-
公开(公告)号：US20230361072A1
公开(公告)日：2023-11-09
申请号：US18147212
申请日：2022-12-28
Inventor： Liang Wang , Rajesh Katkar , Javier A. DeLaCruz , Arkalgud R. Sitaram
IPC: H01L23/00 , H01L23/498 , H01L23/532 , H01L23/528 , H01L23/10 , B81C1/00
CPC classification number: H01L24/29 , H01L23/49838 , H01L23/53228 , H01L23/53242 , H01L23/528 , H01L23/10 , H01L24/08 , H01L24/06 , H01L24/05 , B81C1/00293 , B81C1/00269 , H01L2224/29019 , H01L2224/05571 , H01L2224/05686 , H01L24/80 , H01L2224/80896 , H01L2224/06165 , H01L2224/08121 , H01L2224/80047 , H01L2224/80948 , H01L23/562 , H01L2224/05551 , H01L2224/08237 , H01L2224/06505 , H01L2224/05555 , H01L2224/8001 , H01L2224/05552 , H05K1/111
Abstract: A bonded structure can include a first element having a first conductive interface feature and a second element having a second conductive interface feature. An integrated device can be coupled to or formed with the first element or the second element. The first conductive interface feature can be directly bonded to the second conductive interface feature to define an interface structure. The interface structure can be disposed about the integrated device in an at least partially annular profile to connect the first and second elements.
-
公开(公告)号：US20230343734A1
公开(公告)日：2023-10-26
申请号：US18305149
申请日：2023-04-21
Inventor： Cyprian Emeka UZOH , Oliver ZHAO , Bongsub LEE , Laura Wills MIRKARIMI , Dominik SUWITO
IPC: H01L23/00
CPC classification number: H01L24/05 , H01L24/03 , H01L24/08 , H01L2224/05547 , H01L2224/05571 , H01L2224/05611 , H01L2224/05609 , H01L2224/05663 , H01L2924/01005 , H01L2224/05647 , H01L2224/05655 , H01L2224/05657 , H01L2224/05684 , H01L2224/0567 , H01L2224/0568 , H01L2924/0132 , H01L2224/05666 , H01L2224/05681 , H01L2224/05555 , H01L2224/05557 , H01L2224/05111 , H01L2224/05026 , H01L2224/05073 , H01L2224/05109 , H01L2224/05147 , H01L2224/05157 , H01L2224/05155 , H01L2224/0517 , H01L2224/05172 , H01L2224/0518 , H01L2224/05184 , H01L2224/05163 , H01L2224/03614 , H01L2224/03464 , H01L2224/03452 , H01L2224/03845 , H01L2224/08059 , H01L2224/08145 , H01L24/80 , H01L2224/80895
Abstract: An element, a bonded structure including the element, and a method forming the element and the bonded structure are disclosed. The element can include a non-conductive region having a cavity. The element can include a conductive feature formed in the cavity. The conductive feature includes a center portion and an edge portion having first and second coefficients of thermal expansion respectively. The center and edge portions are recessed relative to a contact surface of the non-conductive region by a first depth and a second depth respectively. The first coefficient of thermal expansion can be at least 5% greater than the second coefficient of thermal expansion. The bonded structure can include the element and a second element having a second non-conductive region and a second conductive feature. A conductive interface between the first and second conductive features has a center region and an edge region. In a side cross-section of the bonded structure, there are more voids at or near the edge region than at or near the center region.
-
公开(公告)号：US11742315B2
公开(公告)日：2023-08-29
申请号：US17231965
申请日：2021-04-15
Inventor： Cyprian Emeka Uzoh
IPC: H01L23/00 , H01L21/67 , H01L23/48 , H01L25/065 , H01L21/683 , H01L21/78 , H01L25/00
CPC classification number: H01L24/80 , H01L21/67046 , H01L21/67051 , H01L21/67132 , H01L21/67253 , H01L21/6836 , H01L21/6838 , H01L21/78 , H01L23/48 , H01L24/97 , H01L25/065 , H01L25/50 , H01L21/67144 , H01L24/81 , H01L2221/68322 , H01L2221/68336 , H01L2221/68363 , H01L2221/68381 , H01L2224/80006 , H01L2224/80011 , H01L2224/80012 , H01L2224/80013 , H01L2224/80019 , H01L2224/80031 , H01L2224/80895 , H01L2224/80896 , H01L2224/81005 , H01L2224/81801 , H01L2224/97 , H01L2224/97 , H01L2224/81 , H01L2224/97 , H01L2224/80001 , H01L2224/81801 , H01L2924/00014 , H01L2224/80895 , H01L2924/00014 , H01L2224/80896 , H01L2924/00014
Abstract: Representative implementations provide techniques and systems for processing integrated circuit (IC) dies. Dies being prepared for intimate surface bonding (to other dies, to substrates, to another surface, etc.) may be processed with a minimum of handling, to prevent contamination of the surfaces or the edges of the dies. The techniques include processing dies while the dies are on a dicing sheet or other device processing film or surface. Systems include integrated cleaning components arranged to perform multiple cleaning processes simultaneously.
-
Patent Agency Ranking
公开(公告)号：US20230268307A1
公开(公告)日：2023-08-24
申请号：US18058693
申请日：2022-11-23
Inventor： Cyprian Emeka Uzoh , Jeremy Alfred Theil , Liang Wang , Rajesh Katkar , Guilian Gao , Laura Wills Mirkarimi
IPC: H01L23/00
CPC classification number: H01L24/26 , H01L24/83 , H01L24/09 , H01L24/30 , H01L24/27 , H01L24/03 , H01L2924/01025 , H01L2224/08257 , H01L2924/01028 , H01L2924/01027
Abstract: Devices and techniques including process steps make use of recesses in conductive interconnect structures to form reliable low temperature metallic bonds. A fill layer is deposited into the recesses prior to bonding. First conductive interconnect structures are bonded at ambient temperatures to second metallic interconnect structures using direct bonding techniques, with the fill layers in the recesses in one or both of the first and second interconnect structures.
-
公开(公告)号：US20230253383A1
公开(公告)日：2023-08-10
申请号：US18300306
申请日：2023-04-13
CPC classification number: H01L25/162 , H01L21/4803 , H01L23/14
Abstract: Techniques for joining dissimilar materials in microelectronics are provided. Example techniques direct-bond dissimilar materials at an ambient room temperature, using a thin oxide, carbide, nitride, carbonitride, or oxynitride intermediary with a thickness between 100-1000 nanometers. The intermediary may comprise silicon. The dissimilar materials may have significantly different coefficients of thermal expansion (CTEs) and/or significantly different crystal-lattice unit cell geometries or dimensions, conventionally resulting in too much strain to make direct-bonding feasible. A curing period at ambient room temperature after the direct bonding of dissimilar materials allows direct bonds to strengthen by over 200%. A relatively low temperature anneal applied slowly at a rate of 1° C. temperature increase per minute, or less, further strengthens and consolidates the direct bonds. The example techniques can direct-bond lithium tantalate LiTaO3 to various conventional substrates in a process for making various novel optical and acoustic devices.
-
公开(公告)号：US11694925B2
公开(公告)日：2023-07-04
申请号：US17313185
申请日：2021-05-06
Inventor： Rajesh Katkar , Cyprian Emeka Uzoh
IPC: H01L21/768 , H01L23/00 , H01L21/68 , H01L25/065 , H01L23/532 , H01L25/00
CPC classification number: H01L21/76843 , H01L21/68 , H01L23/53238 , H01L24/09 , H01L25/0657 , H01L25/50 , H01L2224/08237 , H01L2225/06513 , H01L2924/37001
Abstract: Representative implementations of techniques and devices are used to reduce or prevent conductive material diffusion into insulating or dielectric material of bonded substrates. Misaligned conductive structures can come into direct contact with a dielectric portion of the substrates due to overlap, especially while employing direct bonding techniques. A barrier interface that can inhibit the diffusion is disposed generally between the conductive material and the dielectric at the overlap.
-
公开(公告)号：US20230197496A1
公开(公告)日：2023-06-22
申请号：US18067305
申请日：2022-12-16
Inventor： Jeremy Alfred Theil
IPC: H01L21/683 , B32B43/00
CPC classification number: H01L21/6835 , B32B43/006 , H01L2221/68381 , H01L2221/68327 , H01L21/02115
Abstract: A bonding method is disclosed. The bonding method can include providing a first element having a device portion and a first nonconductive bonding material disposed over the device portion of the first element. The bonding method can include providing a second element that includes a carrier. The second element having a substrate and a second nonconductive bonding material disposed over the substrate of the second element. The bonding method can include depositing a release layer between the device portion and the first nonconductive bonding material of the first element or between the substrate and the second nonconductive bonding material of the second element. The bonding method can include directly bonding the first nonconductive bonding material of the first element to the second nonconductive bonding material of the second element without an intervening adhesive. The bonding method can include removing the second element from the first element by transferring thermal energy to the release layer to thereby induce diffusion of gas including volatile species out of the release layer.
-
公开(公告)号：US11664357B2
公开(公告)日：2023-05-30
申请号：US16459610
申请日：2019-07-02
IPC: H01L21/762 , H01L21/20 , H01L25/16 , H01L21/48 , H01L23/14
CPC classification number: H01L25/162 , H01L21/4803 , H01L23/14
Abstract: Techniques for joining dissimilar materials in microelectronics are provided. Example techniques direct-bond dissimilar materials at an ambient room temperature, using a thin oxide, carbide, nitride, carbonitride, or oxynitride intermediary with a thickness between 100-1000 nanometers. The intermediary may comprise silicon. The dissimilar materials may have significantly different coefficients of thermal expansion (CTEs) and/or significantly different crystal-lattice unit cell geometries or dimensions, conventionally resulting in too much strain to make direct-bonding feasible. A curing period at ambient room temperature after the direct bonding of dissimilar materials allows direct bonds to strengthen by over 200%. A relatively low temperature anneal applied slowly at a rate of 1° C. temperature increase per minute, or less, further strengthens and consolidates the direct bonds. The example techniques can direct-bond lithium tantalate LiTaO3 to various conventional substrates in a process for making various novel optical and acoustic devices.
-
-
-
-
-
-
-
-
-
Search Results
246
records
(took 0.025 seconds)
