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公开(公告)号：US11114295B2
公开(公告)日：2021-09-07
申请号：US16901435
申请日：2020-06-15
Applicant: SHOWA DENKO K.K.
Inventor： Takashi Aigo , Wataru Ito , Tatsuo Fujimoto
IPC: H01L21/02 , C30B25/16 , C30B29/36 , H01L21/205 , C23C16/32 , C30B25/18 , C30B25/20 , C23C16/02 , C23C16/455 , C30B29/06
Abstract: An epitaxial silicon carbide single crystal wafer having a small depth of shallow pits and having a high quality silicon carbide single crystal thin film and a method for producing the same are provided. The epitaxial silicon carbide single crystal wafer according to the present invention is produced by forming a buffer layer made of a silicon carbide epitaxial film having a thickness of 1 μm or more and 10 μm or less by adjusting the ratio of the number of carbon to that of silicon (C/Si ratio) contained in a silicon-based and carbon-based material gas to 0.5 or more and 1.0 or less, and then by forming a drift layer made of a silicon carbide epitaxial film at a growth rate of 15 μm or more and 100 μm or less per hour. According to the present invention, the depth of the shallow pits observed on the surface of the drift layer can be set at 30 nm or less.
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公开(公告)号：US11078598B2
公开(公告)日：2021-08-03
申请号：US16468413
申请日：2017-12-15
Applicant: SHOWA DENKO K.K.
Inventor： Yohei Fujikawa , Hidetaka Takaba
Abstract: A silicon carbide single crystal is grown by a method comprising: a single crystal growth step of growing a silicon carbide single crystal so as to not close a gap between a side surface of the silicon carbide single crystal growing on a silicon carbide seed crystal, and an inner-side surface of a guide member and a crystal deposited on the inner-side surface of the guide member; a crystal growth termination step of terminating crystal growth by temperature lowering; and a gap enlargement step, performed between the single crystal growth step and the crystal growth termination step, of enlarging the gap by maintaining a difference, Pin−Pout, between partial pressure Pin of Si2C in a source gas in the vicinity of an inlet of the gap and partial pressure Pout of Si2C in a source gas in the vicinity of an outlet of the gap at 0.18 torr or less.
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公开(公告)号：US20210230768A2
公开(公告)日：2021-07-29
申请号：US16468413
申请日：2017-12-15
Applicant: SHOWA DENKO K.K.
Inventor： Yohei FUJIKAWA , Hidetaka TAKABA
Abstract: A method for producing a silicon carbide single crystal according to the present invention is a method for producing a silicon carbide single crystal in which a single crystal of silicon carbide is grown on a silicon carbide seed crystal by using a guide member, the method comprising: a single crystal growth step of growing a silicon carbide single crystal in a manner so as to not close a gap between a side surface of the silicon carbide single crystal growing on the silicon carbide seed crystal, and an inner-side surface of the guide member and a crystal deposited on the inner-side surface of the guide member; a crystal growth termination step of terminating crystal growth by lowering the temperature; and a gap enlargement step, performed between the single crystal growth step and the crystal growth termination step, of enlarging the gap by maintaining a difference, Pin-Pout, between a partial pressure Pin of Si2C in a source gas in the vicinity of an inlet of the gap and a partial pressure Pout of Si2C in a source gas in the vicinity of an outlet of the gap at 0.18 torr or less.
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公开(公告)号：US20210201944A1
公开(公告)日：2021-07-01
申请号：US17116223
申请日：2020-12-09
Applicant: SHOWA DENKO K.K.
Inventor： Takehiro YAMAGUCHI , Takayuki FUKUSHIMA , Lei ZHANG , Hisato SHIBATA , Chen XU , Hiroshi KOYANAGI , Yuji UMEMOTO
IPC: G11B5/706
Abstract: A magnetic recording medium includes a substrate; a soft magnetic underlayer laminated on the substrate; an amorphous barrier layer laminated on the soft magnetic underlayer; and a magnetic recording layer laminated on the amorphous barrier layer, wherein the soft magnetic underlayer includes Fe, B, Si, and one or more elements selected from the group consisting of Nb, Zr, Mo, and Ta, wherein the amorphous barrier layer includes Si, W, and one or more elements selected from the group consisting of Nb, Zr, Mo, and Ta, and wherein the magnetic recording layer includes an alloy having an L10 structure.
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85.发明授权公开(公告)号：US11028212B2
公开(公告)日：2021-06-08
申请号：US16324204
申请日：2017-08-01
Applicant: SHOWA DENKO K.K.
Inventor： Naoki Sekioka , Yuya Ohguma , Masanao Kamijo , Yoichiro Takenoshita
IPC: C08F279/02 , C08L51/04 , C09J151/04 , C09J111/02
Abstract: Provided is a method for producing a chloroprene graft copolymer latex containing no organic solvent and exhibiting high adhesive strength even for soft polyvinyl chloride. A method for producing a chloroprene graft copolymer latex includes a chloroprene polymerization step of giving a chloroprene polymer latex and a graft copolymerization step of giving a chloroprene graft copolymer latex. The chloroprene polymerization step is a step of subjecting at least chloroprene (A-1) of chloroprene (A-1) and a monomer (A-2) copolymerizable with chloroprene (A-1) to emulsion radical polymerization. The graft copolymerization step is a step of adding, to the chloroprene polymer latex, a (meth)acrylate (B) and an organic peroxide (C) having an octanol/water partition coefficient of −2.0 or more and 3.0 or less to subject the chloroprene polymer to graft copolymerization with the (meth)acrylate (B) at a temperature of 10° C. or more and 40° C. or less.
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Patent Agency Ranking
公开(公告)号：US11024334B2
公开(公告)日：2021-06-01
申请号：US16835770
申请日：2020-03-31
Applicant: SHOWA DENKO K.K.
Inventor： Takayuki Fukushima , Chen Xu , Lei Zhang , Hisato Shibata , Takehiro Yamaguchi , Kazuya Niwa , Tomoo Shige , Hiroaki Nemoto , Yuji Umemoto , Hiroshi Koyanagi
IPC: G11B11/105 , G11B5/65 , G11B5/66 , G11B5/60 , G11B5/00
Abstract: A magnetic recording medium includes a substrate, an underlayer, and a magnetic layer that are arranged in this order. The magnetic layer has a granular structure including magnetic grains having a L10 crystal structure, and grain boundary parts having a volume fraction in a range of 25 volume % to 50 volume %. The magnetic grains have a c-axis orientation with respect to the substrate. The grain boundary parts include a material having a lattice constant in a range of 0.30 nm to 0.36 nm, or in a range of 0.60 nm to 0.72 nm.
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公开(公告)号：US20210156016A1
公开(公告)日：2021-05-27
申请号：US17104265
申请日：2020-11-25
Applicant: SHOWA DENKO K.K.
Inventor： Takumi MARUYAMA
Abstract: Provided is a production method of an aluminum alloy forging for an automobile suspension having a disturbance affectable surface with not excessively notch-sensitive. The production method includes, as heat treatment processes, a solution heat treatment process, a quenching process, and an artificial age hardening process. The quenching process is performed by bringing a lower surface of the aluminum forging to be disposed on a ground side when assembled to the automobile into contact with water before an upper surface of the aluminum forging opposite to the lower surface is brought into contact with the water.
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公开(公告)号：US20210147669A1
公开(公告)日：2021-05-20
申请号：US16624055
申请日：2018-07-17
Applicant: SHOWA DENKO K.K. , JAPAN POLYETHYLENE CORPORATION
Inventor： Junichi KURODA , Yoshikuni OKUMURA , Shinya HAYASHI , Masahiro UEMATSU , Takaaki HATTORI , Yuichiro YASUKAWA
Abstract: A gas-barrier resin (A) having an oxygen permeability coefficient of 1.0×10−14 (cm3·cm/cm2·s·Pa) or less; and a copolymer (B) containing monomer structural units represented by the formula (1), the formula (2), and the formula (3): where: R1 represents a hydrogen atom or a methyl group; R2 represents a hydrocarbon group having 1 to 20 carbon atoms that may be substituted with a halogen atom, a hydroxy group, an alkoxy group, or an amino group; 1, m, and n represent numerical values representing molar proportions of the respective monomer structural units, and n may represent 0; and p represents an integer of from 1 to 4, wherein a ratio of a mass of the copolymer (B) to a total mass of the gas-barrier resin (A) and the copolymer (B) is from 1 mass % to 40 mass %.
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公开(公告)号：US10995418B2
公开(公告)日：2021-05-04
申请号：US16406539
申请日：2019-05-08
Applicant: SHOWA DENKO K.K.
Inventor： Yohei Fujikawa
Abstract: A shielding member, wherein the shielding member is formed of at least one of structure which has a non-flat plate shape having an inclined surface, and the inclined surface is located on a side of a substrate support part when the shielding member is disposed in a single crystal growth device, wherein the single crystal growth device comprising: a crystal growth container; a source storage part that is positioned at a lower inner part of the crystal growth container; the substrate support part, wherein the support part is disposed above the source storage part and supports a substrate to make the substrate face the source storage part; and a heating device that is disposed on an outer circumference of the crystal growth container, wherein the shielding member is disposed between the source storage part and the substrate support part, and wherein a single crystal of a source is grown on the substrate by sublimating the source from the source storage part.
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公开(公告)号：US10985079B2
公开(公告)日：2021-04-20
申请号：US16672650
申请日：2019-11-04
Applicant: SHOWA DENKO K.K.
Inventor： Yoshitaka Nishihara
Abstract: The invention provides a method of manufacturing a SiC epitaxial wafer in which stacking faults are less likely to occur when a current is passed in a forward direction. The method of manufacturing the SiC epitaxial wafer includes a measurement step for measuring a basal plane dislocation density, a layer structure determining process for determining the layer structure of the epitaxial layer, and an epitaxial growth step for growing the epitaxial layers. And in the layer structure determination step, in the case of (i) when the basal plane dislocation density is lower than a predetermined value, the epitaxial layer includes a conversion layer and a drift layer from the SiC substrate side; and in the case of (ii) when the density is equal to or higher than the predetermined value, the epitaxial layer includes a conversion layer, a recombination layer, and a drift layer from the SiC substrate side.
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