公开(公告)号：US20190301051A1

公开(公告)日：2019-10-03

申请号：US16468413

申请日：2017-12-15

Applicant: SHOWA DENKO K.K.

Inventor： Yohei FUJIKAWA ,  Hidetaka TAKABA

IPC: C30B29/36 ,  C30B23/06

Abstract: A silicon carbide single crystal is grown by a method comprising: a single crystal growth step of growing a silicon carbide single crystal so as to not close a gap between a side surface of the silicon carbide single crystal growing on a silicon carbide seed crystal, and an inner-side surface of a guide member and a crystal deposited on the inner-side surface of the guide member; a crystal growth termination step of terminating crystal growth by temperature lowering; and a gap enlargement step, performed between the single crystal growth step and the crystal growth termination step, of enlarging the gap by maintaining a difference, Pin−Pout, between partial pressure Pin of Si2C in a source gas in the vicinity of an inlet of the gap and partial pressure Pout of Si2C in a source gas in the vicinity of an outlet of the gap at 0.18 torr or less.

公开(公告)号：US20210047750A1

公开(公告)日：2021-02-18

申请号：US16963521

申请日：2018-12-21

Applicant: SHOWA DENKO K.K. ,  DENSO CORPORATION

Inventor： Takanori KIDO ,  Masatake NAGAYA ,  Hidetaka TAKABA

IPC: C30B29/36 ,  C30B33/00 ,  B24B7/22 ,  H01L21/02

Abstract: A seed crystal for single crystal 4H-SiC growth of the present invention is a disk-shaped seed crystal for single crystal 4H-SiC growth having a diameter of more than 150 mm and having a thickness within a range of more than or equal to 1 mm and less than or equal to 0.03 times of the diameter, in which one surface on which the single crystal 4H-SiC is grown is a mirror surface and an Ra of the other surface is more than 10 nm, and an absolute value of magnitude of waviness in a state where the seed crystal is freely deformed so that an internal stress distribution is reduced is less than or equal to 12 μm.

公开(公告)号：US20210230768A2

公开(公告)日：2021-07-29

申请号：US16468413

申请日：2017-12-15

Applicant: SHOWA DENKO K.K.

Inventor： Yohei FUJIKAWA ,  Hidetaka TAKABA

IPC: C30B29/36 ,  C30B23/06

Abstract: A method for producing a silicon carbide single crystal according to the present invention is a method for producing a silicon carbide single crystal in which a single crystal of silicon carbide is grown on a silicon carbide seed crystal by using a guide member, the method comprising: a single crystal growth step of growing a silicon carbide single crystal in a manner so as to not close a gap between a side surface of the silicon carbide single crystal growing on the silicon carbide seed crystal, and an inner-side surface of the guide member and a crystal deposited on the inner-side surface of the guide member; a crystal growth termination step of terminating crystal growth by lowering the temperature; and a gap enlargement step, performed between the single crystal growth step and the crystal growth termination step, of enlarging the gap by maintaining a difference, Pin-Pout, between a partial pressure Pin of Si2C in a source gas in the vicinity of an inlet of the gap and a partial pressure Pout of Si2C in a source gas in the vicinity of an outlet of the gap at 0.18 torr or less.

公开(公告)号：US20200020777A1

公开(公告)日：2020-01-16

申请号：US16471061

申请日：2017-12-22

Applicant: SHOWA DENKO K.K. ,  DENSO CORPORATION

Inventor： Yohei FUJIKAWA ,  Hidetaka TAKABA

IPC: H01L29/16 ,  C30B23/02 ,  C30B29/36

Abstract: In a SiC wafer, a difference between a threading dislocation density of threading dislocations exposed on a first surface and a threading dislocation density of threading dislocations exposed on a second surface is 10% or less of the threading dislocation density of the surface with a higher threading dislocation density among the first surface and the second surface, and 90% or more of the threading dislocations exposed on the surface with a higher threading dislocation density among the first surface and the second surface extend to the surface with a lower threading dislocation density.

公开(公告)号：US20210246572A1

公开(公告)日：2021-08-12

申请号：US17267847

申请日：2019-08-13

Applicant: SHOWA DENKO K.K. ,  DENSO CORPORATION

Inventor： Shunsuke NOGUCHI ,  Yohei FUJIKAWA ,  Hidetaka TAKABA

IPC: C30B29/36 ,  C30B23/02

Abstract: A SiC single crystal, wherein difference between the curving amount of the atomic arrangement surface on the cut surface cut along the direction through the center in plan view and the curving amount of the atomic arrangement surface on the cut surface cut along the direction that passes through the center of view and is perpendicular to the direction is 60 μm or less.

公开(公告)号：US20210189596A1

公开(公告)日：2021-06-24

申请号：US17267691

申请日：2019-08-13

Applicant: SHOWA DENKO K.K.

Inventor： Shunsuke NOGUCHI ,  Yohei FUJIKAWA ,  Hidetaka TAKABA

IPC: C30B29/36 ,  C30B25/02 ,  C30B33/00 ,  C23C16/32

Abstract: A SiC single crystal, wherein an atomic arrangement surface on the cut surface cut along the direction through the center in plan view and an atomic arrangement surface on the cut surface cut along the direction that passes through the center of the plan view and is perpendicular to the direction are curved in the same direction.