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    AREA-SELECTIVE ETCHING
    81.
    发明申请
    AREA-SELECTIVE ETCHING 有权

    公开(公告)号：US20220359215A1

    公开(公告)日：2022-11-10

    申请号：US17724337

    申请日：2022-04-19

    Applicant: ASM IP Holding B.V.

    Inventor： René Henricus Jozef Vervuurt ,  Takayoshi Tsutsumi ,  Masaru Hori ,  Nobuyoshi Kobayashi ,  Yoshinori Oda ,  Charles Dezelah

    IPC: H01L21/3065 ,  H01L21/02 ,  C23C16/455

    Abstract: The current disclosure relates to processes for selectively etching material from one surface of a semiconductor substrate over another surface of the semiconductor substrate. The disclosure further relates to assemblies for etching material from a surface of a semiconductor substrate. In the processes, a substrate comprising a first surface and a second surface is provided into a reaction chamber, an etch-priming reactant is provided into the reaction chamber in vapor phase; reactive species generated from plasma are provided into the reaction chamber for selectively etching material from the first surface. The etch-priming reactant is deposited on the first surface and the etch-priming reactant comprises a halogenated hydrocarbon. The halogenated hydrocarbon may comprise a head group and a tail group, and one or both of them may be halogenated.

    TRANSITION METAL DEPOSITION METHOD
    83.
    发明申请
    TRANSITION METAL DEPOSITION METHOD 有权

    公开(公告)号：US20220195599A1

    公开(公告)日：2022-06-23

    申请号：US17554009

    申请日：2021-12-17

    Applicant: ASM IP Holding B.V.

    Inventor： Charles Dezelah ,  Jan Willem Maes ,  Elina Färm ,  Saima Ali ,  Antti Niskanen

    IPC: C23C16/455 ,  C23C16/18 ,  C23C16/54

    Abstract: The current disclosure relates to methods of depositing transition metal on a substrate. The disclosure further relates to a transition metal layer, to a structure and to a device comprising a transition metal layer. In the method, transition metal is deposited on a substrate by a cyclical deposition process, and the method comprises providing a substrate in a reaction chamber, providing a transition metal precursor to the reaction chamber in a vapor phase and providing a reactant to the reaction chamber in a vapor phase to form transition metal on the substrate. The transition metal precursor comprises a transition metal from any of groups 4 to 6, and the reactant comprises a group 14 element selected from Si, Ge or Sn.

    METHOD OF FORMING STRUCTURES INCLUDING A VANADIUM OR INDIUM LAYER
    89.
    发明申请
    METHOD OF FORMING STRUCTURES INCLUDING A VANADIUM OR INDIUM LAYER 有权

    公开(公告)号：US20210242011A1

    公开(公告)日：2021-08-05

    申请号：US17162279

    申请日：2021-01-29

    Applicant: ASM IP Holding B.V.

    Inventor： Eric James Shero ,  Michael Eugene Givens ,  Qi Xie ,  Charles Dezelah ,  Giuseppe Alessio Verni

    IPC: H01L21/02 ,  H01L29/423 ,  H01L27/092 ,  H01L29/06 ,  H01L29/66

    Abstract: Methods and systems for depositing vanadium and/or indium layers onto a surface of a substrate and structures and devices formed using the methods are disclosed. An exemplary method includes using a cyclical deposition process, depositing a vanadium and/or indium layer onto the surface of the substrate. The cyclical deposition process can include providing a vanadium and/or indium precursor to the reaction chamber and separately providing a reactant to the reaction chamber. The cyclical deposition process may desirably be a thermal cyclical deposition process. Exemplary structures can include field effect transistor structures, such as gate all around structures. The vanadium and/or indium layers can be used, for example, as barrier layers or liners, as work function layers, as dipole shifter layers, or the like.

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