公开(公告)号：US07410907B2

公开(公告)日：2008-08-12

申请号：US11095071

申请日：2005-03-31

Applicant: Dennis S. Greywall

Inventor： Dennis S. Greywall

IPC: H01L21/302 ,  H01L21/461

CPC classification number: B81C1/00404 ,  B81B2201/033

Abstract: A method of fabricating a device using a multi-layered wafer that has an embedded etch mask adapted to map a desired device structure onto an adjacent (poly)silicon layer. Due to the presence of the embedded mask, it becomes possible to delay the etching that forms the mapped structure in the (poly)silicon layer until a relatively late fabrication stage. As a result, flatness of the (poly)silicon layer is preserved for the deposition of any necessary over-layers, which substantially obviates the need for filling the voids created by the structure formation with silicon oxide.

Abstract translation: 一种使用具有适于将期望的器件结构映射到相邻（多）硅层上的嵌入式蚀刻掩模的多层晶片制造器件的方法。 由于嵌入式掩模的存在，可以延迟在（多）硅层中形成映射结构的蚀刻，直到相对较晚的制造阶段。 结果，保留了（多）硅层的平坦度，用于沉积任何必需的上层，这基本上消除了填充由氧化硅形成的结构形成的空隙的需要。

公开(公告)号：US20070287231A1

公开(公告)日：2007-12-13

申请号：US11733791

申请日：2007-04-11

Applicant: Seok-whan CHUNG ,  Hyung CHOI ,  Seok-jin KANG ,  Young-chul KO

Inventor： Seok-whan CHUNG ,  Hyung CHOI ,  Seok-jin KANG ,  Young-chul KO

IPC: H01L21/84

CPC classification number: B81C1/00166 ,  B81B2201/033 ,  B81B2201/042 ,  G02B26/0841

Abstract: A method of etching decoupled comb electrodes by self-alignment is provided The etching method is a self-alignment etching method for forming upper comb electrodes in a first silicon layer of a silicon on insulator (SOI) substrate and lower comb electrodes in a second silicon layer of the SOI substrate. The self-alignment etching method includes forming a first metal mask on the first silicon layer so as to cover portions of the first silicon layer where the upper comb electrodes are to be formed, forming a first photoresist (PR) mask on the first metal mask and portions of the first silicon layer corresponding to the lower comb electrodes, selectively etching the first silicon layer using the first PR mask as an etch barrier layer, selectively etching an insulating layer of the SOI substrate using the first PR mask as an etch barrier layer, selectively etching the second silicon layer of the SOI substrate using the first PR mask as an etch barrier layer, forming a second PR mask on portions of the second silicon layer corresponding to the upper comb electrodes, forming a second metal mask entirely on an exposed bottom surface of the second silicon layer including the second PR mask, removing the first and second PR masks, and etching the first and second silicon layers using the remaining first and second metal masks so as to form the upper comb electrodes and the lower comb electrodes.

Abstract translation: 提供了通过自对准来蚀刻去耦合梳状电极的方法。蚀刻方法是用于在绝缘体上硅（SOI）衬底的第一硅层中形成上梳状电极的自对准蚀刻方法和在第二硅中的下梳状电极 SOI衬底层。 自对准蚀刻方法包括在第一硅层上形成第一金属掩模以覆盖将要形成上梳状电极的第一硅层的部分，在第一金属掩模上形成第一光致抗蚀剂（PR）掩模 并且第一硅层对应于下梳状电极的部分，使用第一PR掩模选择性地蚀刻第一硅层作为蚀刻阻挡层，使用第一PR掩模作为蚀刻阻挡层选择性地蚀刻SOI衬底的绝缘层 使用第一PR掩模作为蚀刻阻挡层选择性地蚀刻SOI衬底的第二硅层，在对应于上梳状电极的第二硅层的部分上形成第二PR掩模，完全在暴露的 第二硅层的底表面包括第二PR掩模，去除第一和第二PR掩模，以及使用rema蚀刻第一和第二硅层 在第一和第二金属掩模上形成上梳状电极和下梳状电极。

公开(公告)号：US07247247B2

公开(公告)日：2007-07-24

申请号：US10839990

申请日：2004-05-06

Applicant: Jerwei Hsieh ,  Huai-Yuan Chu ,  Julius Ming-Lin Tsai ,  Weileun Fang

Inventor： Jerwei Hsieh ,  Huai-Yuan Chu ,  Julius Ming-Lin Tsai ,  Weileun Fang

IPC: B81C1/00

CPC classification number: H02N1/008 ,  B81B2201/033 ,  B81C1/00595 ,  Y10S438/942

Abstract: A selective etching method with lateral protection function is provided. The steps includes: (a) providing a substrate; (b) forming a plurality of tunnels; (c) forming a lateral strengthening structure at a peripheral wall of the tunnels; (d) removing a bottom portion of the lateral strengthening structure, and a part of the substrate by an etching process so as to form a lower structure and expose an unstrengthened structure; and (f) etching the unstrengthened structure laterally so as to form an upper structure.

Abstract translation: 提供了具有侧向保护功能的选择性蚀刻方法。 步骤包括：（a）提供基底; （b）形成多个隧道; （c）在隧道的周壁处形成横向加固结构; （d）通过蚀刻工艺去除侧向强化结构的底部和基底的一部分，以形成下部结构并暴露未加强的结构; 和（f）横向蚀刻非强化结构以形成上部结构。

公开(公告)号：US07205174B2

公开(公告)日：2007-04-17

申请号：US11224119

申请日：2005-09-13

Applicant: Chang-Li Hung

Inventor： Chang-Li Hung

IPC: H01L21/00

CPC classification number: B81B3/0045 ,  B81B2201/033 ,  B81B2201/042 ,  B81B2203/0109 ,  B81B2203/0154 ,  B81B2203/058 ,  G02B26/0841

Abstract: A micro-electro-mechanical component comprising a movable element with comb electrodes, and two stationary elements with comb electrodes aligned and stacked on each other but electrically insulated by a layer of insulation material. The movable element is supported by multiple torsional hinges and suspended over a cavity such that the element can oscillate about an axis defined by the hinges. The comb electrodes of the movable element are interdigitated with the comb electrodes of one stationary element in the same plane to form an in-plane comb actuator. The comb electrodes of the movable element are also interdigitated in an elevated plane with the comb electrodes of another stationary element to form a vertical comb actuator. As a result, the micro-electro-mechanical component is both an in-plane actuator and a vertical comb actuator, or a multiple-plane actuator. Methods of fabricating such actuator are also described.

Abstract translation: 一种微电子机械部件，包括具有梳状电极的可移动元件和具有梳状电极的两个固定元件，梳状电极彼此对准并堆叠，但是被绝缘材料层电绝缘。 可移动元件由多个扭转铰链支撑并悬挂在空腔上，使得元件可以围绕由铰链限定的轴线摆动。 可移动元件的梳状电极与同一平面中的一个固定元件的梳状电极相互交错，以形成平面内的梳状致动器。 可移动元件的梳状电极也在另一个固定元件的梳状电极的高架平面上交错形成垂直梳状致动器。 结果，微电子机械部件既是面内致动器，也是垂直梳状致动器，或者是多平面致动器。 还描述了制造这种致动器的方法。

公开(公告)号：US07033515B2

公开(公告)日：2006-04-25

申请号：US10686764

申请日：2003-10-17

Applicant: Norinao Kouma ,  Yoshihiro Mizuno ,  Osamu Tsuboi ,  Hisao Okuda ,  Hiromitsu Soneda ,  Satoshi Ueda ,  Ippei Sawaki ,  Yoshitaka Nakamura

Inventor： Norinao Kouma ,  Yoshihiro Mizuno ,  Osamu Tsuboi ,  Hisao Okuda ,  Hiromitsu Soneda ,  Satoshi Ueda ,  Ippei Sawaki ,  Yoshitaka Nakamura

IPC: H01L21/00

CPC classification number: B81C1/00182 ,  B81B2201/0235 ,  B81B2201/033 ,  B81B2201/042 ,  B81C2201/014 ,  B81C2201/0174 ,  G02B26/0841

Abstract: A method is for manufacturing a microstructure having a thin-walled portion with use of a material substrate. The material substrate has a laminated structure which includes a first conductor layer 101, a second conductor layer 102, a third conductor layer 103, a first insulating layer 104 interposed between the first conductor layer and the second conductor layer, and a second insulating layer 105 interposed between the second conductor layer and the third conductor layer. The first insulating layer is patterned to have a first masking part for covering a thin-wall forming region of the second conductor layer. The second insulating layer is patterned to have a second masking part for covering the thin-wall forming region of the second conductor layer. The method includes forming the thin-walled portion in the second conductor portion by etching the material substrate from the first conductor layer down to the second insulating layer via a mask pattern 58 including a non-masking region corresponding to the thin-wall forming region of the second conductor layer.

Abstract translation: 一种使用材料基板制造具有薄壁部分的微结构的方法。 材料基板具有包括第一导体层101，第二导体层102，第三导体层103，插入在第一导体层和第二导体层之间的第一绝缘层104和第二绝缘层105的层叠结构 插入在第二导体层和第三导体层之间。 第一绝缘层被图案化以具有用于覆盖第二导体层的薄壁形成区域的第一掩模部分。 图案化第二绝缘层以具有用于覆盖第二导体层的薄壁形成区域的第二掩模部分。 该方法包括：通过掩模图案58将材料基板从第一导体层蚀刻到第二绝缘层，从而在第二导体部分中形成薄壁部分，掩模图案58包括对应于薄壁形成区域的非屏蔽区域 第二导体层。

公开(公告)号：US20060054983A1

公开(公告)日：2006-03-16

申请号：US10943097

申请日：2004-09-15

Applicant: Cenk Acar ,  Andrei Shkel

Inventor： Cenk Acar ,  Andrei Shkel

IPC: H01L29/84 ,  H01L29/94 ,  H01L27/20

CPC classification number: H02N1/008 ,  B81B3/0056 ,  B81B2201/033 ,  B81B2203/051 ,  G01C19/5719 ,  G01P15/0802 ,  G01P15/125

Abstract: A MEMS device which utilizes a capacitive sensor or actuator is enhancement by initially fabricating the capacitive assembly which comprises the sensor or actuator as two sets of interdigitated fingers in a noninterdigitated configuration. One of the two sets of fingers is coupled to a movable stage. The stage is moved from an initial position to a post-release position in which the two sets of interdigitated fingers are interdigitated with each other. The stage is carried by two pairs flexures which maintain the stability of motion of the stage and when in the post-release position provide stiffness which prevents deflection of the set of fingers coupled to the stage. The stage and hence the assembled sets of fingers are then locked into the post-release position.

Abstract translation: 利用电容式传感器或致动器的MEMS器件通过最初制造包含传感器或致动器的电容性组件来增强，该电容式组件包括非指令配置的两组交叉指状物。 两组手指中的一组联接到可移动台。 舞台从初始位置移动到释放位置，其中两组交叉指状物彼此交错。 舞台通过两对弯曲进行，其保持舞台的运动的稳定性，并且当在释放位置时提供刚度，其防止联接到舞台的手指组的偏转。 然后将舞台和组合的手指组锁定到后释放位置。

公开(公告)号：US07005775B2

公开(公告)日：2006-02-28

申请号：US10142821

申请日：2002-05-09

Applicant: Chang Feng Wan

Inventor： Chang Feng Wan

IPC: H02N1/00 ,  G02B26/08

CPC classification number: G02B26/0841 ,  B81B3/0035 ,  B81B2201/033 ,  B81B2201/045 ,  B81B2203/058

Abstract: The present invention is related to a novel micro-electro-mechanical systems (MEMS) torsional drive that is capable of tilting suspended structure such as a micro-mirror for steering light beams in three-dimensional analog fashion, which is suitable for high port count optical switches. The torsional drive has the advantages of allowing large tilt angle, having low drive voltage, and capable of providing a feedback signal for closed-loop control.

Abstract translation: 本发明涉及一种新颖的微电机械系统（MEMS）扭转驱动器，其能够倾斜诸如用于以三维模拟方式转向光束的微镜等悬置结构，适用于高端口数 光开关。 扭转驱动器具有允许具有低驱动电压的大倾斜角度并且能够提供用于闭环控制的反馈信号的优点。

公开(公告)号：US20050231065A1

公开(公告)日：2005-10-20

申请号：US10828946

申请日：2004-04-20

Applicant: Yee-Chung Fu

Inventor： Yee-Chung Fu

IPC: G02B26/08 ,  H02N1/00

CPC classification number: H02N1/008 ,  B81B3/0045 ,  B81B2201/033 ,  B81B2201/047 ,  B81B2203/0109 ,  B81B2203/058 ,  G02B26/0841 ,  Y10S359/904

Abstract: A micro-electro-mechanical system (MEMS) mirror device includes an mirror, bonding pads, springs, and beams connected to the mirror. The mirror has a width greater than 1000 and less than 1200 microns, a length greater than 4000 and less than 5500 microns, and a thickness greater than 240 microns. Each beam includes a plurality of rotational comb teeth and is connected by multiple springs to the bonding pads.

Abstract translation: 具有旋转梳齿（416,434）的梁连接到长度为4000-5500微米且厚度大于240微米的反射镜。 弹簧将梁连接到焊盘（436,472）。 梁的宽度为800-1400微米，长度为3000-9000微米，厚度为120-240微米。

公开(公告)号：US20050139577A1

公开(公告)日：2005-06-30

申请号：US10479865

申请日：2003-02-03

Applicant: Sung-Chul Kim ,  Yong-Seop Yoon

Inventor： Sung-Chul Kim ,  Yong-Seop Yoon

IPC: G02B26/08 ,  B81B3/00 ,  B81B7/00 ,  B81C1/00 ,  G02B6/35 ,  H02N1/00 ,  B44C1/22

CPC classification number: G02B6/3584 ,  B81B2201/033 ,  B81B2203/0136 ,  B81B2203/0181 ,  B81C1/0019 ,  G02B6/3514 ,  G02B6/3546 ,  G02B6/357 ,  G02B6/3594 ,  G02B6/3596 ,  H02N1/008

Abstract: A microelectromechanical system (MEMS) comb actuator materialized in an insulating material and a manufacturing method thereof are provided. The MEMS comb actuator includes a stationary comb fixed to a substrate; a movable comb separated from the substrate; a post fixed to the substrate; and a spring connected to the post to be separated from the substrate so as to movably support the movable comb. The stationary comb, the movable comb, the post, and the spring are formed in an insulating material layer formed on the substrate, and a metal coating layer is formed at least on the surface of the stationary comb and the movable comb. The method includes preparing a substrate; forming an insulating material layer on the substrate using silica or polymer; and selectively etching the insulating material layer and the substrate, thereby forming a stationary comb, a movable comb, a post, and a spring in the insulating material layer, and forming a metal coating layer on the surfaces of the stationary comb and the movable comb.

Abstract translation: 提供了一种以绝缘材料形成的微电子机械系统（MEMS）梳状致动器及其制造方法。 MEMS梳状致动器包括固定在基底上的固定梳子; 与基板分离的可动梳子; 固定在基材上的柱; 以及连接到柱的弹簧以与基板分离以便可移动地支撑可动梳。 固定梳，可动梳，柱和弹簧形成在形成在基板上的绝缘材料层中，并且至少在固定梳和可动梳的表面上形成金属涂层。 该方法包括制备基材; 使用二氧化硅或聚合物在基板上形成绝缘材料层; 并且选择性地蚀刻绝缘材料层和基板，从而在绝缘材料层中形成静止梳子，可动梳子，柱子和弹簧，并且在固定梳子和可动梳子的表面上形成金属涂层 。

公开(公告)号：US20050042791A1

公开(公告)日：2005-02-24

申请号：US10935947

申请日：2004-09-08

Applicant: Mark Allen ,  Charles Chung

Inventor： Mark Allen ,  Charles Chung

IPC: B81B3/00 ,  B81B5/00 ,  B81C1/00 ,  H01L21/761 ,  H01L21/00

CPC classification number: H01L21/761 ,  B81B3/0086 ,  B81B2201/033 ,  Y10S257/93

Abstract: A micromachined structure having electrically isolated components is formed by thermomigrating a dopant through a substrate to form a doped region within the substrate. The doped region separates two portions of the substrate. The dopant is selected such that the doped region electrically isolates the two portions of the substrate from each other via junction isolation.

Abstract translation: 具有电隔离组分的微加工结构通过通过衬底热掺杂掺杂剂形成，以在衬底内形成掺杂区域。 掺杂区域分离衬底的两部分。 选择掺杂剂使得掺杂区域通过结隔离将衬底的两个部分彼此电隔离。