Removal of MEMS sacrificial layers using supercritical fluid/chemical formulations
    84.
    发明授权
    Removal of MEMS sacrificial layers using supercritical fluid/chemical formulations 失效
    使用超临界流体/化学配方去除MEMS牺牲层

    公开(公告)号:US07160815B2

    公开(公告)日:2007-01-09

    申请号:US10782355

    申请日:2004-02-19

    Abstract: A method and composition for removing silicon-containing sacrificial layers from Micro Electro Mechanical System (MEMS) and other semiconductor substrates having such sacrificial layers is described. The etching compositions include a supercritical fluid (SCF), an etchant species, a co-solvent, and optionally a surfactant. Such etching compositions overcome the intrinsic deficiency of SCFs as cleaning reagents, viz., the non-polar character of SCFs and their associated inability to solubilize polar species that must be removed from the semiconductor substrate. The resultant etched substrates experience lower incidents of stiction relative to substrates etched using conventional wet etching techniques.

    Abstract translation: 描述了用于从微机电系统(MEMS)和其它具有这种牺牲层的半导体衬底去除含硅牺牲层的方法和组合物。 蚀刻组合物包括超临界流体(SCF),蚀刻剂物质,共溶剂和任选的表面活性剂。 这样的蚀刻组合物克服了作为清洗剂的SCF的固有缺陷,即SCF的非极性特征以及它们不溶于必须从半导体衬底去除的极性物质。 所得到的蚀刻的衬底相对于使用常规湿蚀刻技术蚀刻的衬底的沉降事件较少。

    Method for removing a sacrificial material with a compressed fluid
    86.
    发明授权
    Method for removing a sacrificial material with a compressed fluid 有权
    用压缩流体去除牺牲材料的方法

    公开(公告)号:US06958123B2

    公开(公告)日:2005-10-25

    申请号:US10167272

    申请日:2002-06-10

    Abstract: A method comprises depositing an organic material on a substrate; depositing additional material different from the organic material after depositing the organic material; and removing the organic material with a compressed fluid. Also disclosed is a method comprising: providing an organic layer on a substrate; after providing the organic layer, providing one or more layers of a material different than the organic material of the organic layer; removing the organic layer with a compressed fluid; and providing an anti-stiction agent with a compressed fluid to material remaining after removal of the organic layer.

    Abstract translation: 一种方法包括在衬底上沉积有机材料; 在沉积有机材料之后沉积与有机材料不同的附加材料; 并用压缩流体除去有机材料。 还公开了一种方法,包括:在衬底上提供有机层; 在提供有机层之后,提供与有机层的有机材料不同的一层或多层材料; 用压缩流体去除有机层; 并且在去除有机层之后向剩余的材料提供具有压缩流体的抗静电剂。

    Removal of MEMS sacrificial layers using supercritical fluid/chemical formulations
    88.
    发明申请
    Removal of MEMS sacrificial layers using supercritical fluid/chemical formulations 审中-公开
    使用超临界流体/化学配方去除MEMS牺牲层

    公开(公告)号:US20050118832A1

    公开(公告)日:2005-06-02

    申请号:US10724791

    申请日:2003-12-01

    Abstract: A method and composition for removing silicon-containing sacrificial layers from Micro Electro Mechanical System (MEMS) substrates having such sacrificial layers is described. The etching compositions include a supercritical fluid, an etchant species, a co-solvent, and optionally a surfactant. Such etching compositions overcome the intrinsic deficiency of SCFs as cleaning reagents, viz., the non-polar character of SCFs and their associated inability to solubilize polar species that must be removed from the semiconductor substrate. The resultant etched MEMS substrates experience lower incidents of stiction relative to MEMS substrates etched using conventional wet etching techniques.

    Abstract translation: 描述了从具有这种牺牲层的微机电系统(MEMS)衬底去除含硅牺牲层的方法和组合物。 蚀刻组合物包括超临界流体,蚀刻剂物质,共溶剂和任选的表面活性剂。 这样的蚀刻组合物克服了作为清洗剂的SCF的固有缺陷,即SCF的非极性特征以及它们不溶于必须从半导体衬底去除的极性物质。 所得蚀刻的MEMS衬底相对于使用常规湿蚀刻技术蚀刻的MEMS衬底的静态故障事件。

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