公开(公告)号：US20140084450A1

公开(公告)日：2014-03-27

申请号：US13627425

申请日：2012-09-26

Applicant: Sandia Corporation

Inventor： Gregory N. Nielson ,  Carlos Anthony Sanchez ,  Anna Tauke-Pedretti ,  Bongsang Kim ,  Jeffrey Cederberg ,  Murat Okandan ,  Jose Luis Cruz-Campa ,  Paul J. Resnick

IPC: H01L23/48 ,  H01L21/50

CPC classification number: H01L25/50 ,  B81C1/00373 ,  B81C2201/0194 ,  H01L21/283 ,  H01L21/31111 ,  H01L21/561 ,  H01L21/568 ,  H01L21/6835 ,  H01L21/6836 ,  H01L24/13 ,  H01L24/80 ,  H01L24/97 ,  H01L25/0657 ,  H01L2221/68327 ,  H01L2221/68354 ,  H01L2221/68368 ,  H01L2221/68381 ,  H01L2224/0401 ,  H01L2224/08145 ,  H01L2224/13005 ,  H01L2224/131 ,  H01L2224/14135 ,  H01L2224/80006 ,  H01L2224/80896 ,  H01L2224/9202 ,  H01L2224/97 ,  H01L2225/06517 ,  H01L2225/06568 ,  H01L2224/11 ,  H01L2224/80001 ,  H01L2924/00012 ,  H01L2924/014

Abstract: A method includes forming a release layer over a donor substrate. A plurality of devices made of a first semiconductor material are formed over the release layer. A first dielectric layer is formed over the plurality of devices such that all exposed surfaces of the plurality of devices are covered by the first dielectric layer. The plurality of devices are chemically attached to a receiving device made of a second semiconductor material different than the first semiconductor material, the receiving device having a receiving substrate attached to a surface of the receiving device opposite the plurality of devices. The release layer is etched to release the donor substrate from the plurality of devices. A second dielectric layer is applied over the plurality of devices and the receiving device to mechanically attach the plurality of devices to the receiving device.

Abstract translation: 一种方法包括在供体基底上形成释放层。 在剥离层上形成由第一半导体材料制成的多个器件。 在多个器件上形成第一介电层，使得多个器件的所有暴露表面被第一介电层覆盖。 所述多个装置化学地附接到由不同于第一半导体材料的第二半导体材料制成的接收装置，所述接收装置具有附接到与所述多个装置相对的所述接收装置的表面的接收基板。 蚀刻释放层以从多个装置释放施主衬底。 在多个装置和接收装置上施加第二介电层以将多个装置机械地附接到接收装置。

公开(公告)号：US20140057382A1

公开(公告)日：2014-02-27

申请号：US13749008

申请日：2013-01-24

Applicant: HONEYWELL INTERNATIONAL INC.

Inventor： Ryan Supino ,  Grant H. Lodden

IPC: B81C1/00

CPC classification number: B81C1/00523 ,  B81C1/00182 ,  B81C1/00619 ,  B81C2201/019 ,  B81C2201/0194

Abstract: In an embodiment a method of fabricating a MEMS structure is provided. The method includes fabricating a working structure in a doped layer proximate a first surface of a silicon substrate. The first surface of the silicon substrate is bonded to a first planar glass structure having a first one or more sacrificial features embedded therein. The method also includes etching to remove a bulk of the silicon substrate, wherein the bulk is reverse of the first surface on the silicon substrate, wherein etching removes the bulk and leaves the working structure bonded to the first planar glass structure. The method also includes etching to remove the first one or more sacrificial features from the first planar glass structure.

Abstract translation: 在一个实施例中，提供了一种制造MEMS结构的方法。 该方法包括在接近硅衬底的第一表面的掺杂层中制造工作结构。 硅衬底的第一表面被结合到具有嵌入其中的第一个或多个牺牲特征的第一平面玻璃结构。 该方法还包括蚀刻以去除大部分硅衬底，其中本体与硅衬底上的第一表面相反，其中蚀刻去除体并离开结合到第一平面玻璃结构的工作结构。 该方法还包括蚀刻以从第一平面玻璃结构去除第一个或多个牺牲特征。

公开(公告)号：US20140038392A1

公开(公告)日：2014-02-06

申请号：US13778047

申请日：2013-02-26

Applicant: Solexel, Inc.

Inventor： Takao Yonehara ,  Virenda V. Rana ,  Sean Seutter ,  Mehrdad M. Moslehi ,  Subramanian Tamilmani

IPC: H01L21/304

CPC classification number: H01L21/7813 ,  B23K26/0006 ,  B23K26/0093 ,  B23K26/0622 ,  B23K26/082 ,  B23K26/0869 ,  B23K26/244 ,  B23K26/50 ,  B23K26/53 ,  B23K26/702 ,  B23K2101/40 ,  B23K2103/52 ,  B42D25/00 ,  B81C1/0038 ,  B81C1/0088 ,  B81C2201/0192 ,  B81C2201/0194 ,  H01L21/268 ,  H01L21/304 ,  H01L21/76254 ,  H01L21/76259 ,  H01L25/0657 ,  H01L31/022441 ,  H01L31/0682 ,  H01L31/1892 ,  H01L33/0079 ,  H01L33/0095 ,  H01L2224/32145 ,  H01L2224/32245 ,  H01L2224/48091 ,  H01L2224/48145 ,  H01L2224/48247 ,  H01L2224/49107 ,  H01L2224/73265 ,  H01L2924/13091 ,  H01L2924/1461 ,  Y02E10/547 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

Abstract: Methods and systems are provided for the split and separation of a layer of desired thickness of crystalline semiconductor material containing optical, photovoltaic, electronic, micro-electro-mechanical system (MEMS), or optoelectronic devices, from a thicker donor wafer using laser irradiation.

Abstract translation: 提供的方法和系统用于使用激光照射从较厚的施主晶片分离和分离含有光学，光电，电子，微电子机械系统（MEMS）或光电子器件的期望厚度的结晶半导体材料的层。

公开(公告)号：US08590136B2

公开(公告)日：2013-11-26

申请号：US12870288

申请日：2010-08-27

Applicant: Kuang L. Yang ,  Li Chen ,  Thomas D. Chen

Inventor： Kuang L. Yang ,  Li Chen ,  Thomas D. Chen

IPC: H04R31/00

CPC classification number: H04R19/04 ,  B81B2201/0257 ,  B81C1/00182 ,  B81C2201/0194 ,  H04R19/005 ,  H04R2201/003 ,  Y10T29/43 ,  Y10T29/49002 ,  Y10T29/49005 ,  Y10T29/4908

Abstract: A dual backplate MEMS microphone system including a flexible diaphragm sandwiched between two single-crystal silicon backplates may be formed by fabricating each backplate in a separate wafer, and then transferring one backplate from its wafer to the other wafer, to form two separate capacitors with the diaphragm.

Abstract translation: 包括夹在两个单晶硅背板之间的柔性隔膜的双背板MEMS麦克风系统可以通过在单独的晶片中制造每个背板，然后将一个背板从其晶片传输到另一个晶片来形成两个单独的电容器，其中 隔膜

公开(公告)号：US20130196504A1

公开(公告)日：2013-08-01

申请号：US13879803

申请日：2011-11-18

Applicant: Toshinori Ogashiwa ,  Masaaki Kurita ,  Takashi Nishimori ,  Yukio Kanehira

Inventor： Toshinori Ogashiwa ,  Masaaki Kurita ,  Takashi Nishimori ,  Yukio Kanehira

IPC: H01L21/48

CPC classification number: H01L21/4885 ,  B22F7/08 ,  B23K1/0016 ,  B23K35/0244 ,  B23K35/3006 ,  B23K35/3013 ,  B23K35/322 ,  B23K2101/40 ,  B81C1/00095 ,  B81C1/00373 ,  B81C2201/0188 ,  B81C2201/0194 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L24/94 ,  H01L2224/03003 ,  H01L2224/031 ,  H01L2224/0312 ,  H01L2224/03334 ,  H01L2224/0401 ,  H01L2224/0508 ,  H01L2224/05082 ,  H01L2224/05083 ,  H01L2224/05139 ,  H01L2224/05144 ,  H01L2224/05166 ,  H01L2224/05169 ,  H01L2224/05639 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05664 ,  H01L2224/05666 ,  H01L2224/05669 ,  H01L2224/0567 ,  H01L2224/05671 ,  H01L2224/05673 ,  H01L2224/05676 ,  H01L2224/05678 ,  H01L2224/05681 ,  H01L2224/05684 ,  H01L2224/11003 ,  H01L2224/111 ,  H01L2224/1112 ,  H01L2224/11334 ,  H01L2224/13082 ,  H01L2224/13083 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/13164 ,  H01L2224/13166 ,  H01L2224/13169 ,  H01L2224/1317 ,  H01L2224/13171 ,  H01L2224/13173 ,  H01L2224/13176 ,  H01L2224/13178 ,  H01L2224/13181 ,  H01L2224/13184 ,  H01L2224/94 ,  H01L2924/01006 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/0104 ,  H01L2924/01044 ,  H01L2924/01045 ,  H01L2924/01047 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/1461 ,  H01L2924/15788 ,  H01L2224/05644 ,  H01L2924/00014 ,  H01L2924/01046 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2224/11

Abstract: The present invention provides a transfer substrate for transferring a metal wiring material to a transfer-receiving object, the transfer substrate comprising a substrate, at least one metal wiring material formed on the substrate and an underlying metal film formed between the substrate and the metal wiring material, wherein the metal wiring material is a molded article prepared by sintering, e.g., gold powder having a purity of 99.9% by weight or more and an average particle size of 0.01 μm to 1.0 μm and the underlying metal film is composed of a metal such as gold or an alloy. The transfer substrate is capable of transferring a metal wiring material to the transfer-receiving object even at a temperature for heating the transfer-receiving object of 80 to 300° C.

Abstract translation: 本发明提供一种用于将金属布线材料转印到转印接收对象的转印基板，所述转印基板包括基板，形成在所述基板上的至少一种金属布线材料和形成在所述基板和所述金属布线之间的下面的金属膜 材料，其中金属布线材料是通过烧结制备的模制品，例如纯度为99.9重量％以上的金粉末和0.01μm至1.0μm的平均粒度，并且下面的金属膜由金属 如金或合金。 转印基板即使在80〜300℃的转印接收对象的加热温度下也能够将金属配线材料转印到转印接收体。