Abstract:
A detector apparatus is disclosed that includes a housing and a multilayer disposed within the housing. The multilayer defining a leading edge and a trailing edge and is adapted to interact with a plurality of high-energy photons, impingent from the leading edge, to permit passage of photons of at least one selected energy. The multilayer is secured to a first securement adjacent to the leading edge. The multilayer is secured to a second securement bracket adjacent to the trailing edge. At least one detector is disposed adjacent to the trailing edge of the multilayer to detect the impingent high-energy photons. An adjustment mechanism operatively connects to the second securement bracket to adjust the position of the second securement bracket, thereby altering an angular position of the multilayer.
Abstract:
This invention extends the Kirkpatrick-Baez (KB) mirror focusing geometry to allow nondispersive focusing of neutrons with a convergence on a sample much larger than is possible with existing KB optical schemes by establishing an array of at least three mirrors and focusing neutrons by appropriate multiple deflections via the array. The method may be utilized with supermirrors, multilayer mirrors, or total external reflection mirrors. Because high-energy x-rays behave like neutrons in their absorption and reflectivity rates, this method may be used with x-rays as well as neutrons.
Abstract:
The invention relates to an optical device intended to treat an incident X-ray beam. The optical device comprises a monochromator and an optical element for conditioning the incident beam. The reflective surface of the optical element is able to produce a two-dimensional optical effect in order to adapt a beam in destination of the monochromator. The reflective surface of the optical element comprises a multilayer structure type surface that is reflective to X-rays. In particular, the reflective surface consists of a single surface shaped according to two curvatures corresponding to two different directions.
Abstract:
There is provided an illumination system. The illumination system includes a source of light having a wavelength of less than or equal to about 193 nm, a first facet, a second facet, and a reflective element. The light is incident on the first facet via a first path, propagates from the first facet to the second facet via a second path, and propagates from the second facet to the reflective element via a third path. The second path and the third path are in substantially opposite directions from one another and substantially parallel to each other.
Abstract:
An apparatus and method for EUV light production is disclosed which may comprise a laser produced plasma (“LPP”) extreme ultraviolet (“EUV”) light source control system comprising a target delivery system adapted to deliver moving plasma initiation targets and an EUV light collection optic having a ibeus defining a desired plasma initiation site, comprising; a target tracking and feedback system comprising: at least one imaging device providing as an output an image of a target stream track, wherein the target stream track results from the imaging speed of the camera being too slow to image individual plasma formation targets forming the target stream imaged as the target stream track; a stream track error detector detecting an error in the position of the target stream track in at least one axis genemily perpendicular to the target stream track from a desired stream truck intersecting the desired plasma initiation site.
Abstract:
An optical arrangement, in particular a projection system, illumination system or beam shaping system for EUV lithography, including at least one optical element that is arranged in a beam path of the optical arrangement and that reflects radiation in the soft X-ray- or EUV wavelength range, wherein at least during operation of the optical arrangement at least one of, preferably each of, the reflective optical elements in the beam path, at least at the optical surface, has an operating temperature of approximately 30° C. or more, preferably of approximately 100° C. or more, particularly preferably of approximately 150° C. or more, and even more preferably of approximately 250° C. or more, and wherein the optical design of the at least one reflective optical element is selected such that its optical characteristics are optimised for operation at the operating temperature. Also presented is a method for providing a reflective optical element with such an optical design.
Abstract:
Systems and methods are disclosed for cleaning a chamber window of an extreme ultraviolet (EUV) light source. The window may have an inside surface facing a chamber interior and an opposed outside surface and the light source may generate debris by plasma formation. For the system, a subsystem may be positioned outside the chamber and may be operable to pass energy through the window to heat debris accumulating on the inside surface of the window. In a first embodiment, the subsystem may place a flowing, heated gas in contact with the outside surface of the window. In another embodiment, electromagnetic radiation may be passed through the window.
Abstract:
There is provided a projection exposure apparatus for microlithography using a wavelength less than or equal to 193 nm. The apparatus includes an optical element with a pupil raster element, and a projection objective with a real entrance pupil. The optical element is situated in or near a plane defined by the real entrance pupil.
Abstract:
An X-ray optical element for and influencing of X-ray beam characteristics in two dimensions includes two reflective, curved elements arranged side-by-side to receive X-ray radiation from an X-ray beam source so that the radiation is directed onto both reflective elements and then reflected from one element onto the other element, wherein the two reflective elements are curved at different angles and have different focal lengths.
Abstract:
An apparatus and method is described which may comprise a plasma produced extreme ultraviolet (“EUV”) light source multilayer collector which may comprise a plasma formation chamber; a shell within the plasma formation chamber in the form of a collector shape having a focus; the shell having a sufficient size and thermal mass to carry operating heat away from the multilayer reflector and to radiate the heat from the surface of the shell on a side of the shell opposite from the focus. The material of the shell may comprise a material selected from a group which may comprise silicon carbide, silicon, Zerodur or ULE glass, aluminum, beryllium, molybdenum, copper and nickel. The apparatus and method may comprise at least one radiative heater directed at the shell to maintain the steady state temperature of the shell within a selected range of operating temperatures.