Immobilization Particles for Removal of Microorganisms and/or Chemicals
    1.
    发明申请
    Immobilization Particles for Removal of Microorganisms and/or Chemicals 审中-公开
    用于去除微生物和/或化学物质的固定颗粒

    公开(公告)号:US20120108787A1

    公开(公告)日:2012-05-03

    申请号:US13344315

    申请日:2012-01-05

    Applicant: Brian C. Lue

    Inventor: Brian C. Lue

    Abstract: An immobilization particle for immobilizing a target microorganism or target chemical found in or on a mammal that includes: immobilization molecules capable of attaching to a target microorganism or a target chemical, which immobilization molecules are attached to one or more portions of a substrate structure; wherein the substrate structure is capable of inhibiting contact between tissues of the mammal and target microorganisms or target chemicals attached to immobilization molecules attached to the one or more portions.

    Abstract translation: 一种用于固定在哺乳动物中或哺乳动物中存在的靶微生物或靶化学物质的固定化颗粒,其包括:固定化分子,其能够附着于靶微生物或目标化学物质,所述固定分子附着于基材结构的一个或多个部分; 其中所述底物结构能够抑制哺乳动物的组织与附着于所述一个或多个部分的固定化分子的靶微生物或靶化学物质的接触。

    INTERLACED RTD SENSOR FOR ZONE/AVERAGE TEMPERATURE SENSING
    4.
    发明申请
    INTERLACED RTD SENSOR FOR ZONE/AVERAGE TEMPERATURE SENSING 审中-公开
    用于区域/平均温度感测的相互连接的RTD传感器

    公开(公告)号:US20080224817A1

    公开(公告)日:2008-09-18

    申请号:US11686781

    申请日:2007-03-15

    CPC classification number: G01K1/14 H01L21/67103 H01L21/67248

    Abstract: A device for heating a semiconductor wafer comprises a heating element arranged to conduct heat toward the wafer. The heating element can extend along a heating element path. An RTD sensor loop can extend along an RTD sensor path. The RTD sensor path can be positioned along the heating element path to measure a temperature that corresponds to the heating element. The RTD sensor loop can measure an average temperature along the heating element. Portions of the RTD sensor can be interlaced between portions of the heating element. The heating element path can be arranged with interstices between portions of the heating element path, and portions of the RTD sensor path can be positioned within the interstices to interlace the RTD sensor loop with the heating element. The RTD sensor loop can comprise a soft metal that is resistant to oxidation and extends along the RTD sensor path.

    Abstract translation: 用于加热半导体晶片的装置包括布置成朝向晶片传导热量的加热元件。 加热元件可以沿着加热元件路径延伸。 RTD传感器回路可以沿着RTD传感器路径延伸。 RTD传感器路径可以沿着加热元件路径定位,以测量对应于加热元件的温度。 RTD传感器回路可以测量加热元件的平均温度。 RTD传感器的部分可以在加热元件的部分之间交错。 加热元件路径可以在加热元件路径的部分之间布置有间隙,并且RTD传感器路径的部分可以位于间隙内,以使RTD传感器回路与加热元件交错。 RTD传感器回路可以包括耐金属氧化并沿RTD传感器路径延伸的软金属。

    METHOD AND SYSTEM FOR PERFORMING ELECTROSTATIC CHUCK CLAMPING IN TRACK LITHOGRAPHY TOOLS
    6.
    发明申请
    METHOD AND SYSTEM FOR PERFORMING ELECTROSTATIC CHUCK CLAMPING IN TRACK LITHOGRAPHY TOOLS 审中-公开
    轨道切割工具中静电切割夹具的方法和系统

    公开(公告)号:US20090109595A1

    公开(公告)日:2009-04-30

    申请号:US11933152

    申请日:2007-10-31

    CPC classification number: H01L21/6831

    Abstract: A method of clamping/declamping a semiconductor wafer on an electrostatic chuck in ambient air includes disposing the semiconductor wafer at a predetermined distance above a dielectric surface of the electrostatic chuck having one or more electrodes and applying a first voltage greater than a predetermined threshold to the one or more electrodes of the electrostatic chuck for a first time period. The method includes reducing the first voltage to a second voltage substantially equal to a self bias potential of the semiconductor wafer after the first time period. The method includes maintaining the second voltage for a second time period and adjusting the second voltage to a third voltage characterized by a polarity opposite to that of the first voltage and a magnitude smaller than the predetermined threshold. The method includes reducing the third voltage to a fourth voltage substantially equal to the second voltage after a third time period.

    Abstract translation: 在环境空气中将静电卡盘上的半导体晶片夹紧/放大的方法包括将半导体晶片设置在具有一个或多个电极的静电卡盘的电介质表面之上的预定距离处,并将大于预定阈值的第一电压施加到 静电卡盘的一个或多个电极第一时间段。 该方法包括在第一时间段之后将第一电压降低到基本上等于半导体晶片的自偏压电位的第二电压。 该方法包括将第二电压维持第二时间段,并将第二电压调整到第三电压,其特征在于具有与第一电压相反的极性和小于预定阈值的幅度。 该方法包括在第三时间段之后将第三电压降低到基本上等于第二电压的第四电压。

    METHOD AND SYSTEM TO MEASURE AND COMPENSATE FOR SUBSTRATE WARPAGE DURING THERMAL PROCESSING
    7.
    发明申请
    METHOD AND SYSTEM TO MEASURE AND COMPENSATE FOR SUBSTRATE WARPAGE DURING THERMAL PROCESSING 审中-公开
    在热处理过程中测量和补偿衬底温度的方法和系统

    公开(公告)号:US20080153182A1

    公开(公告)日:2008-06-26

    申请号:US11777929

    申请日:2007-07-13

    Abstract: A method of performing a thermal process using a bake plate of a track lithography tool. The bake plate includes a plurality of heater zones. The method includes providing a first drive signal to a first electrode in electrical communication with a process surface of the bake plate. The first electrode is associated with a first heater zone of the plurality of heater zones and each of the plurality of heater zones is adapted to receive a control voltage. The method also includes moving a semiconductor substrate toward the process surface of the bake plate, receiving a first response signal from the first electrode, processing the first response signal to determine a first capacitance value associated with a first gap between the first electrode and a first portion of the semiconductor substrate, and providing a measurement signal related to the first capacitance value.

    Abstract translation: 使用轨道光刻工具的烘烤板进行热处理的方法。 烘烤板包括多个加热器区域。 该方法包括向与烘烤板的处理表面电连通的第一电极提供第一驱动信号。 第一电极与多个加热器区域的第一加热器区域相关联,并且多个加热器区域中的每一个适于接收控制电压。 该方法还包括将半导体衬底朝向烘烤板的处理表面移动,从第一电极接收第一响应信号,处理第一响应信号以确定与第一电极和第一电极之间的第一间隙相关联的第一电容值 并且提供与第一电容值相关的测量信号。

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