Chemical liquid supply unit, and substrate treating apparatus and method using the same
    4.
    发明授权
    Chemical liquid supply unit, and substrate treating apparatus and method using the same 有权
    化学液体供应单元,以及使用其的基板处理装置和方法

    公开(公告)号:US08739729B2

    公开(公告)日:2014-06-03

    申请号:US12289752

    申请日:2008-11-03

    Applicant: In-Cheol Ryu

    Inventor: In-Cheol Ryu

    CPC classification number: G03F7/162 H01L21/6715 H01L21/67248

    Abstract: Provided are a substrate treating unit, and substrate treating apparatus and method using the same. Two nozzle arms are provided, and photoresist liquid nozzles and an organic solvent nozzle are installed in each of the nozzle arms. A temperature of a photoresist liquid flowing into the photoresist liquid nozzles and a temperature of an organic solvent flowing into the organic solvent nozzle are maintained by a temperature control fluid supplied through the same passage. Also, a waiting port in which a nozzle arm used in a process temporarily waits is provided. The organic solvent is provided to a photoresist liquid nozzle that is not used in a process and is not provided to a photoresist liquid nozzle used in the process.

    Abstract translation: 提供了一种基板处理单元,以及使用该基板处理单元的基板处理装置和方法。 提供两个喷嘴臂,并且在每个喷嘴臂中安装光致抗蚀剂液体喷嘴和有机溶剂喷嘴。 流入光致抗蚀剂液体喷嘴的光致抗蚀剂液体的温度和流入有机溶剂喷嘴的有机溶剂的温度由通过相同通道供给的温度控制流体保持。 另外,提供了一个等待端口,其中在一个进程中使用的喷嘴臂暂时等待。 将有机溶剂提供到光刻胶液体喷嘴,该光致抗蚀剂液体喷嘴在工艺中不使用,并且不提供给在该方法中使用的光致抗蚀剂液体喷嘴。

    Method of developing a substrate and apparatus for performing the same
    6.
    发明授权
    Method of developing a substrate and apparatus for performing the same 有权
    显影基板的方法及其执行装置

    公开(公告)号:US08303197B2

    公开(公告)日:2012-11-06

    申请号:US12198153

    申请日:2008-08-26

    CPC classification number: G03F7/3021 H01L21/67057 H01L21/67178

    Abstract: In an apparatus for performing a substrate developing process, a first washing tank and a second washing tank are disposed on both sides of a substrate support section for supporting the substrate opposite to each other to wash a developing nozzle. The developing nozzle moves in a horizontal direction from the first washing tank toward the second washing tank and supplies a developing solution onto the substrate in the meantime. After supplying the developing solution, the developing nozzle is received in the second washing tank, and the developing solution adhered to the developing nozzle is removed by a washing solution in the second washing tank.

    Abstract translation: 在用于进行基板显影处理的装置中,第一清洗槽和第二清洗槽设置在基板支撑部的两侧,用于支撑彼此相对的基板以洗涤显影喷嘴。 显影喷嘴在水平方向上从第一洗涤槽向第二洗涤槽移动,同时将显影液供给到基板上。 在提供显影液之后,将显影喷嘴容纳在第二洗涤槽中,并且通过第二洗涤槽中的洗涤液除去附着在显影喷嘴上的显影液。

    THZ-BAND FOLDED DIPOLE ANTENNA HAVING HIGH INPUT IMPEDANCE
    7.
    发明申请
    THZ-BAND FOLDED DIPOLE ANTENNA HAVING HIGH INPUT IMPEDANCE 审中-公开
    具有高输入阻抗的THZ-BAND折叠双极天线

    公开(公告)号:US20100134372A1

    公开(公告)日:2010-06-03

    申请号:US12498870

    申请日:2009-07-07

    CPC classification number: H01Q9/26 H01Q9/285

    Abstract: Provided is a folded dipole antenna including a meander line formed on a photoconductive substrate, characterized by an input impedance of several kΩ, which is much higher than that of a conventional dipole antenna, due to optimization of a horizontal length, a line interval, a width, and a line number of the meander line. Accordingly, use of the folded dipole antenna greatly improves an impedance matching characteristic between the antenna and a photomixer having an output impedance of 10 kΩ or more, and accordingly an output of a THz continuous wave.

    Abstract translation: 提供了一种折叠偶极天线,其包括形成在光电导基板上的曲折线,其特征在于由于水平长度,线间隔的优化而导致的几个k&OHgr的输入阻抗远高于常规偶极子天线的输入阻抗, 宽度和曲折线的行号。 因此,使用折叠的偶极天线大大地改善了天线与输出阻抗为10kΩ的光混频器之间的阻抗匹配特性; 以上,因此输出THz连续波。

    Metal interconnection structure of a semiconductor device having low resistance and method of fabricating the same
    9.
    发明授权
    Metal interconnection structure of a semiconductor device having low resistance and method of fabricating the same 有权
    具有低电阻的半导体器件的金属互连结构及其制造方法

    公开(公告)号:US07452801B2

    公开(公告)日:2008-11-18

    申请号:US11268350

    申请日:2005-11-07

    CPC classification number: H01L21/76877

    Abstract: Provided is a metal interconnection structure of a semiconductor device, including a first metal film pattern disposed on an upper part of an insulation film of a semiconductor substrate; an intermetallic dielectric film having a metal contact plug in which a barrier layer, a metal film for contact plug and a second metal film are sequentially disposed, on the first metal film pattern; and a second metal film pattern disposed on the metal contact plug and intermetallic dielectric film and connected to the metal contact plug.

    Abstract translation: 提供一种半导体器件的金属互连结构,其包括设置在半导体衬底的绝缘膜的上部的第一金属膜图案; 具有金属接触插塞的金属间介电膜,所述金属接触插塞在所述第一金属膜图案上依次配置阻挡层,接触插塞用金属膜和第二金属膜; 以及设置在所述金属接触插塞和金属间介电膜上并连接到所述金属接触插塞的第二金属膜图案。

    METAL INTERCONNECTION STRUCTURE OF A SEMICONDUCTOR DEVICE HAVING LOW RESISTANCE AND METHOD OF FABRICATING THE SAME
    10.
    发明申请
    METAL INTERCONNECTION STRUCTURE OF A SEMICONDUCTOR DEVICE HAVING LOW RESISTANCE AND METHOD OF FABRICATING THE SAME 有权
    具有低电阻率的半导体器件的金属互连结构及其制造方法

    公开(公告)号:US20080237864A1

    公开(公告)日:2008-10-02

    申请号:US12136497

    申请日:2008-06-10

    CPC classification number: H01L21/76877

    Abstract: Provided is a metal interconnection structure of a semiconductor device, including a first metal film pattern disposed on an upper part of an insulation film of a semiconductor substrate; an intermetallic dielectric film having a metal contact plug in which a barrier layer, a metal film for contact plug and a second metal film are sequentially disposed, on the first metal film pattern; and a second metal film pattern disposed on the metal contact plug and intermetallic dielectric film and connected to the metal contact plug.

    Abstract translation: 提供一种半导体器件的金属互连结构,其包括设置在半导体衬底的绝缘膜的上部的第一金属膜图案; 具有金属接触插塞的金属间介电膜,所述金属接触插塞在所述第一金属膜图案上依次配置阻挡层,接触插塞用金属膜和第二金属膜; 以及设置在所述金属接触插塞和金属间介电膜上并连接到所述金属接触插塞的第二金属膜图案。

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