公开(公告)号：US20130008380A1

公开(公告)日：2013-01-10

申请号：US13610798

申请日：2012-09-11

Applicant: Chia-Chih CHUANG ,  Yu Huang

Inventor： Chia-Chih CHUANG ,  Yu Huang

IPC: H01L21/203

CPC classification number: H01L21/02568 ,  C23C14/0623 ,  C23C14/228 ,  C23C14/24 ,  H01L21/02614

Abstract: An apparatus for fabricating IB-IIIA-VIA2 compound semiconductor thin films is provided, including a reaction chamber, a pressure control unit connected with the reaction chamber, a pedestal disposed in the reaction chamber wherein the at least one substrate includes elements of group IB and group IIIA, a first group VIA element supply unit connecting with the reaction chamber for providing vaporized first group VIA elements into the reaction chamber, and a plasma unit disposed in the reaction chamber. In one embodiment, during a reaction in the reaction chamber, the vaporized first group VIA elements flow through the high density plasma region and transform into ionized first group VIA elements, and the ionized first group VIA elements diffuse into the at least one substrate comprising elements of group IB and group IIIA to form a IB-IIIA-VIA2 compound semiconductor thin film thereover.

Abstract translation: 提供一种用于制造IB-IIIA-VIA2化合物半导体薄膜的装置，包括反应室，与反应室连接的压力控制单元，设置在反应室中的基座，其中至少一个基板包括组1B和 组IIIA，与反应室连接的用于将蒸发的第一组VIA元件提供到反应室中的第一组VIA元件供应单元和设置在反应室中的等离子体单元。 在一个实施方案中，在反应室中的反应期间，蒸发的第一组VIA元素流过高密度等离子体区域并转化成电离的第一组VIA元素，并且离子化的第一组VIA元素扩散到至少一个包含元素 的IB和IIIA族以形成IB-IIIA-VIA2化合物半导体薄膜。

公开(公告)号：US20050212394A1

公开(公告)日：2005-09-29

申请号：US11091495

申请日：2005-03-29

Applicant: Jing-Shie Lin ,  Yi-Lung Chiang ,  Chin-Tien Hsiao ,  Chia-Chih Chuang

Inventor： Jing-Shie Lin ,  Yi-Lung Chiang ,  Chin-Tien Hsiao ,  Chia-Chih Chuang

IPC: G06F3/14 ,  G09G5/02 ,  G09G5/14 ,  G09G5/36 ,  H01J1/02 ,  H01J1/304 ,  H01J31/12 ,  H04N1/46 ,  H04N1/60 ,  H04N17/02

CPC classification number: B82Y10/00 ,  H01J1/3044 ,  H01J31/127 ,  H01J2201/30469

Abstract: A carbon nanotube substrate structure including a substrate and a conductive layer disposed thereon. The carbon nanotube layer or the conductive layer has numerous support particles with a diameter smaller than the length of the carbon nanotube of the carbon nanotube layer. The carbon nanotubes, the conductive layer and the support particles are adhered to each other by means of a glue. The carbon nanotubes lean on the support particles, whereby the carbon nanotubes can stand and protrude from the surface of the carbon nanotube layer to serve as field emission sources.

Abstract translation: 一种碳纳米管基板结构，其包括基板和设置在其上的导电层。 碳纳米管层或导电层具有直径小于碳纳米管层的碳纳米管的长度的许多载体颗粒。 碳纳米管，导电层和载体颗粒通过胶粘剂彼此粘合。 碳纳米管靠在载体颗粒上，由此碳纳米管可以从碳纳米管层的表面放置并突出以用作场致发射源。

公开(公告)号：US20100173482A1

公开(公告)日：2010-07-08

申请号：US12502140

申请日：2009-07-13

Applicant: Chia-Chih Chuang ,  Yu Huang

Inventor： Chia-Chih Chuang ,  Yu Huang

IPC: H01L21/20 ,  C23C14/54

CPC classification number: H01L21/02568 ,  C23C14/0623 ,  C23C14/228 ,  C23C14/24 ,  H01L21/02614

Abstract: Methods and apparatus for fabricating IB-IIIA-VIA2 compound semiconductor thin films are provided. A method for fabricating IB-IIIA-VIA2 compound semiconductor thin films includes providing a substrate with a precursor film thereover, wherein the precursor film includes elements of group IB and group IIIA. An annealing process is performed on the substrate and the precursor film thereover and forms a group IB-IIIA alloy thin film over the substrate. A surface treatment is performed by transporting ionized group VIA elements to the group IB-IIIA alloy thin film to react therewith to thereby form an IB-IIIA-VIA2 compound semiconductor thin film.

Abstract translation: 提供了制造IB-IIIA-VIA2化合物半导体薄膜的方法和装置。 一种制造IB-IIIA-VIA2化合物半导体薄膜的方法包括在其上提供前体膜的衬底，其中前体膜包括IB族和IIIA族的元素。 在衬底和前体膜上进行退火处理，并在衬底上形成IB-IIIA族合金薄膜。 通过将离子化VIA族元素输送到IB-IIIA族合金薄膜进行表面处理，与其反应从而形成IB-IIIA-VIA2化合物半导体薄膜。

公开(公告)号：US20100297835A1

公开(公告)日：2010-11-25

申请号：US12567762

申请日：2009-09-26

Applicant: Chia-Chih Chuang ,  Jhe-Wei Guo ,  Yu Huang

Inventor： Chia-Chih Chuang ,  Jhe-Wei Guo ,  Yu Huang

IPC: H01L21/20 ,  H01L31/18

CPC classification number: H01L21/02491 ,  H01L21/02422 ,  H01L21/02568 ,  H01L21/02614 ,  H01L31/0322 ,  Y02E10/541

Abstract: A method for fabricating a copper-indium-gallium-diselenide (CIGS) compound thin film is provided. In this method, a substrate is first provided. An adhesive layer is formed over the substrate. A metal electrode layer is formed over the adhesive layer. A precursor stacked layer is formed over the metal electrode layer, wherein the precursor stacked layer includes a plurality of copper-gallium (CuGa) alloy layers and at least one copper-indium (CuIn) alloy layer sandwiched between the plurality of CuGa alloy layers. An annealing process is performed to convert the precursor stacked layer into a copper-indium-gallium (CuInGa) alloy layer. A selenization process is performed to convert the CuInGa alloy layer into a copper-indium-gallium-diselenide (CuInGaSe) compound thin film.

Abstract translation: 提供了一种制造铜 - 镓 - 二硒化铜（CIGS）复合薄膜的方法。 在该方法中，首先提供基板。 在衬底上形成粘合剂层。 在粘合剂层上形成金属电极层。 在金属电极层上方形成前体层叠层，其中前体堆叠层包括夹在多个CuGa合金层之间的多个铜 - 镓（CuGa）合金层和至少一个铜 - 铟（CuIn）合金层。 进行退火处理以将前体堆叠层转换成铜铟镓（CuInGa）合金层。 进行硒化处理以将CuInGa合金层转化为铜铟镓二硒化物（CuInGaSe）复合薄膜。

公开(公告)号：US20110048522A1

公开(公告)日：2011-03-03

申请号：US12610370

申请日：2009-11-02

Applicant: Chia-Chih Chuang ,  Jhe-Wei Guo ,  Tung-Po Hsieh

Inventor： Chia-Chih Chuang ,  Jhe-Wei Guo ,  Tung-Po Hsieh

IPC: H01L31/00

CPC classification number: H01L31/18 ,  H01L31/0322 ,  H01L31/0749 ,  Y02E10/541

Abstract: The invention provides a solar cell. The solar cell has the following structures: a substrate; a first electrode formed on the substrate; a light absorbing layer formed on the first electrode, wherein the light absorbing layer includes a first compound thin film and a second compound thin film, and a band gap of the second compound thin film is larger than that of the first compound thin film; a buffer layer formed on the light absorbing layer; a transparent conducting layer formed on the buffer layer; and a second electrode formed on the transparent conducting layer.

Abstract translation: 本发明提供一种太阳能电池。 太阳能电池具有以下结构：基板; 形成在所述基板上的第一电极; 形成在所述第一电极上的光吸收层，其中所述光吸收层包括第一化合物薄膜和第二化合物薄膜，并且所述第二化合物薄膜的带隙大于所述第一化合物薄膜的带隙; 形成在所述光吸收层上的缓冲层; 形成在缓冲层上的透明导电层; 以及形成在所述透明导电层上的第二电极。