中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

4 records (took 0.011 seconds)

    Method of forming a micromechanical structure
    1.
    发明申请
    Method of forming a micromechanical structure 有权
    形成微机械结构的方法

    公开(公告)号：US20060035439A1

    公开(公告)日：2006-02-16

    申请号：US10917362

    申请日：2004-08-13

    Applicant: Ching-Heng Po ,  Shen-Ping Wang ,  Chia-Chiang Chen

    Inventor： Ching-Heng Po ,  Shen-Ping Wang ,  Chia-Chiang Chen

    IPC: H01L21/30

    CPC classification number: B81C1/0038 ,  B81C2201/0109

    Abstract: A method of forming a micromechanical structure, wherein at least one micromechanical structural layer is provided above a substrate. The micromechanical structural layer is sustained between a lower sacrificial silicon layer and an upper sacrificial silicon layer, wherein a metal silicide layer is formed between the lower and upper sacrificial silicon layers to increase interface adhesion therebetween. The upper sacrificial silicon layer, the metal silicide layer and the lower sacrificial silicon layer are then removed to release the micromechanical structural layer.

    Abstract translation: 一种形成微机械结构的方法，其中至少一个微机械结构层设置在基板上。 微机械结构层维持在下牺牲硅层和上牺牲硅层之间，其中在下牺牲硅层和上牺牲硅层之间形成金属硅化物层以增加它们之间的界面粘合。 然后去除上牺牲硅层，金属硅化物层和下牺牲硅层以释放微机械结构层。

    Method of forming a micromechanical structure
    2.
    发明申请
    Method of forming a micromechanical structure 审中-公开
    形成微机械结构的方法

    公开(公告)号：US20050057792A1

    公开(公告)日：2005-03-17

    申请号：US10660626

    申请日：2003-09-12

    Applicant: Shen-Ping Wang ,  Ching-Heng Po ,  Yuh-Hwa Chang

    Inventor： Shen-Ping Wang ,  Ching-Heng Po ,  Yuh-Hwa Chang

    IPC: B81C1/00 ,  G02B26/08 ,  H01L21/20 ,  H01L21/321 ,  G02B26/00

    CPC classification number: G02B26/0833 ,  B81B2201/047 ,  B81C1/0038 ,  B81C2201/0109 ,  B81C2201/019 ,  H01L21/0242 ,  H01L21/02422 ,  H01L21/0245 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/321

    Abstract: A method of forming a micromechanical structure. A first sacrificial silicon layer is formed on a substrate. A mirror plate is formed on part of the first sacrificial silicon layer. Argon sputtering is performed on the mirror plate and the first sacrificial silicon layer. A hydrogen treatment is performed on the first sacrificial silicon layer to form an H-treated silicon surface thereon. A second sacrificial silicon layer is formed over the mirror plate and the first sacrificial silicon layer. At least one hole is formed to penetrate the second sacrificial silicon layer, the mirror plate and the first sacrificial silicon layer. A conductive material fills in the hole to define a mirror support structure attached to the mirror plate and the substrate. The first and second sacrificial layers are removed to release the mirror plate.

    Abstract translation: 一种形成微机械结构的方法。 在基板上形成第一牺牲硅层。 在第一牺牲硅层的一部分上形成镜板。 在镜面板和第一牺牲硅层上进行氩溅射。 在第一牺牲硅层上进行氢处理，以在其上形成经H处理的硅表面。 在镜面板和第一牺牲硅层之上形成第二牺牲硅层。 形成至少一个孔以穿透第二牺牲硅层，镜板和第一牺牲硅层。 导电材料填充在孔中以限定附接到镜板和基板的反射镜支撑结构。 去除第一和第二牺牲层以释放镜板。

    Method of foming a micromechanical structure
    4.
    发明授权
    Method of foming a micromechanical structure 有权
    微机械结构的形成方法

    公开(公告)号：US07541280B2

    公开(公告)日：2009-06-02

    申请号：US10917362

    申请日：2004-08-13

    Applicant: Ching-Heng Po ,  Shen-Ping Wang ,  Chia-Chiang Chen

    Inventor： Ching-Heng Po ,  Shen-Ping Wang ,  Chia-Chiang Chen

    IPC: H01L21/4763 ,  H01L21/44

    CPC classification number: B81C1/0038 ,  B81C2201/0109

    Abstract: A method of forming a micromechanical structure, wherein at least one micromechanical structural layer is provided above a substrate. The micromechanical structural layer is sustained between a lower sacrificial silicon layer and an upper sacrificial silicon layer, wherein a metal silicide layer is formed between the lower and upper sacrificial silicon layers to increase interface adhesion therebetween. The upper sacrificial silicon layer, the metal silicide layer and the lower sacrificial silicon layer are then removed to release the micromechanical structural layer.

    Abstract translation: 一种形成微机械结构的方法，其中至少一个微机械结构层设置在基板上。 微机械结构层维持在下牺牲硅层和上牺牲硅层之间，其中在下牺牲硅层和上牺牲硅层之间形成金属硅化物层以增加它们之间的界面粘合。 然后去除上牺牲硅层，金属硅化物层和下牺牲硅层以释放微机械结构层。

Patent Agency Ranking