公开(公告)号：US11199769B2

公开(公告)日：2021-12-14

申请号：US16008585

申请日：2018-06-14

Applicant: Exogenesis Corporation

Inventor： Sean R. Kirkpatrick ,  Rangarajan Jagannathan

IPC: G03F1/80 ,  H01L21/311 ,  H01L21/265 ,  H01L21/02 ,  G03F1/82 ,  H05H3/02 ,  H01J37/317 ,  H01J37/147 ,  H01J37/05 ,  H01L21/321 ,  H01J37/31 ,  H01L29/36 ,  B24B37/04

Abstract: A method of processing a trench, via, hole, recess, void, or other feature that extends a depth into a substrate to a base or bottom and has an opening by irradiation with an accelerated neutral beam derived from an accelerated gas cluster ion beam for processing materials at the base or bottom of the opening.

公开(公告)号：US20190171098A1

公开(公告)日：2019-06-06

申请号：US16273013

申请日：2019-02-11

Applicant: Exogenesis Corporation

Inventor： Sean R. Kirkpatrick ,  Richard C. Svrluga ,  Stephen M. Blinn

IPC: G03F1/80 ,  H01L21/265 ,  H01J37/05 ,  H01J37/317 ,  H01L21/311 ,  H01L21/02 ,  G03F1/82 ,  H05H3/02 ,  H01J37/147

Abstract: An apparatus and method provides a drug layer formed on a surface region of a medical device, the drug layer comprised of a drug deposition and a carbonized or densified layer formed from the drug deposition by irradiation on an outer surface of the drug deposition, wherein the carbonized or densified layer does not penetrate through the drug deposition and is adapted to release drug from the drug deposition at a predetermined rate.

公开(公告)号：US20180292745A1

公开(公告)日：2018-10-11

申请号：US16008573

申请日：2018-06-14

Applicant: Exogenesis Corporation

Inventor： Sean R. Kirkpatrick ,  Kiet A. Chau ,  Son T. Chau

IPC: G03F1/80 ,  H01L21/265 ,  G03F1/82 ,  H01J37/05 ,  H01J37/147 ,  H01J37/317 ,  H01L21/02 ,  H05H3/02 ,  H01L21/311 ,  B24B37/04 ,  H01L29/36

Abstract: A method of processing a trench, via, hole, recess, void, or other feature that extends a depth into a substrate to a base or bottom and has an opening with high aspect ratio (into depth from opening to base or bottom divided by minimum space of the trench therebetween) by irradiation with an accelerated neutral beam derived from an accelerated gas cluster ion beam for processing materials at the base or bottom of the opening.

公开(公告)号：US09795719B2

公开(公告)日：2017-10-24

申请号：US14985825

申请日：2015-12-31

Applicant: Exogenesis Corporation

Inventor： Stephen M. Blinn ,  Richard C. Svrluga

IPC: A61L31/16 ,  A61L31/12 ,  A61F2/82 ,  C23C14/02 ,  C23C14/22 ,  C23C14/50

CPC classification number: A61L31/16 ,  A61F2/82 ,  A61F2250/0067 ,  A61L31/12 ,  A61L2300/406 ,  A61L2300/416 ,  A61L2300/42 ,  A61L2300/426 ,  A61L2300/61 ,  A61L2300/62 ,  A61L2400/18 ,  C23C14/022 ,  C23C14/221 ,  C23C14/505 ,  H01J2237/0812 ,  Y10T428/249988 ,  Y10T428/31504

Abstract: In one embodiment, a drug delivery system and method provide a member including a combination of a drug substance and a polymer or other material, and an encapsulating layer formed in an outer surface of the member by gas cluster ion beam irradiation of the outer surface of the member, which encapsulating layer is adapted to determine one or more characteristics of the drug delivery system.

公开(公告)号：US20170123309A1

公开(公告)日：2017-05-04

申请号：US15403964

申请日：2017-01-11

Applicant: Exogenesis Corporation

Inventor： Sean R. Kirkpatrick

IPC: G03F1/80 ,  G03F1/82 ,  H05H3/02

CPC classification number: G03F1/80 ,  B24B37/04 ,  G03F1/82 ,  H01J37/05 ,  H01J37/147 ,  H01J37/317 ,  H01J37/3171 ,  H01J2237/0041 ,  H01J2237/0812 ,  H01J2237/15 ,  H01L21/02115 ,  H01L21/02274 ,  H01L21/26506 ,  H01L21/26513 ,  H01L21/26566 ,  H01L21/31105 ,  H01L21/31111 ,  H01L29/36 ,  H05H3/02 ,  Y10T428/24355 ,  Y10T428/24479 ,  Y10T428/30

Abstract: A method for treating a substrate surface uses Neutral Beam irradiation derived from a gas-cluster ion-beam and articles produced thereby including lithography photomask substrates.

公开(公告)号：US20240018003A1

公开(公告)日：2024-01-18

申请号：US18214937

申请日：2023-06-27

Applicant: Exogenesis Corporation

Inventor： Sean R. Kirkpatrick ,  Son T. Chau

IPC: C01B32/196

CPC classification number: C01B32/196 ,  C01B2204/30

Abstract: A method for removing contaminants from a graphene product uses an accelerated neutral atom beam to remove product contaminants without disruption of the product's crystalline lattice and morphology to enable usage in high purity devices/systems such as exemplified in semi-conductor and like high purity needs applications.

公开(公告)号：US10858732B2

公开(公告)日：2020-12-08

申请号：US16273037

申请日：2019-02-11

Applicant: Exogenesis Corporation

Inventor： Sean R. Kirkpatrick ,  Allen R. Kirkpatrick ,  Michael J. Walsh

IPC: C23C14/00 ,  C23C14/58 ,  H01J37/32 ,  G02B1/12 ,  G02B1/02 ,  H01J37/05 ,  H01J37/317 ,  H01J37/147

Abstract: A method for Neutral Beam irradiation derived from gas cluster ion beams and articles produced thereby including optical elements.

公开(公告)号：US10670960B2

公开(公告)日：2020-06-02

申请号：US16008573

申请日：2018-06-14

Applicant: Exogenesis Corporation

Inventor： Sean R. Kirkpatrick ,  Kiet A. Chau ,  Son T. Chau

IPC: H01J37/00 ,  G03F1/80 ,  H01J37/317 ,  H01L21/311 ,  H01L21/265 ,  H01L21/02 ,  G03F1/82 ,  H05H3/02 ,  H01J37/147 ,  H01J37/05 ,  H01J37/32 ,  H01L29/36 ,  B24B37/04

Abstract: A method of processing a trench, via, hole, recess, void, or other feature that extends a depth into a substrate to a base or bottom and has an opening with high aspect ratio (into depth from opening to base or bottom divided by minimum space of the trench therebetween) by irradiation with an accelerated neutral beam derived from an accelerated gas cluster ion beam for processing materials at the base or bottom of the opening.

公开(公告)号：US20180299771A1

公开(公告)日：2018-10-18

申请号：US16008585

申请日：2018-06-14

Applicant: Exogenesis Corporation

Inventor： Sean R. Kirkpatrick ,  Rangarajan Jagannathan

IPC: G03F1/80 ,  H01L21/311 ,  H01L21/265 ,  H01L21/02 ,  G03F1/82

Abstract: A method of processing a trench, via, hole, recess, void, or other feature that extends a depth into a substrate to a base or bottom and has an opening by irradiation with an accelerated neutral beam derived from an accelerated gas cluster ion beam for processing materials at the base or bottom of the opening.

公开(公告)号：US09799488B2

公开(公告)日：2017-10-24

申请号：US14571533

申请日：2014-12-16

Applicant: Exogenesis Corporation

Inventor： Sean R. Kirkpatrick ,  Allen R. Kirkpatrick ,  Michael J. Walsh ,  Richard C. Svrluga

IPC: H01J37/05 ,  H01J37/317 ,  H01J37/08 ,  H01J37/147

CPC classification number: H01J37/3171 ,  C03C23/005 ,  C03C2204/08 ,  H01J37/05 ,  H01J37/08 ,  H01J37/147 ,  H01J37/317 ,  H01J2237/0041 ,  H01J2237/0812 ,  H01J2237/15 ,  H01J2237/31701 ,  H01L21/02115 ,  H01L21/02238 ,  H01L21/02274 ,  H01L21/26506 ,  H01L21/26513 ,  H01L21/26566 ,  H01L21/31105 ,  H01L21/31116 ,  H01L21/32115 ,  H01L29/36 ,  H01M4/04 ,  H01M10/04 ,  H01M10/0585 ,  H01M2004/021 ,  Y10T428/24355 ,  Y10T428/24479 ,  Y10T428/30

Abstract: A method of improving the surface of an object treats the surface with a neutral beam formed from a gas cluster ion mean to create a surface texture and/or increase surface area.