公开(公告)号：US20120237061A1

公开(公告)日：2012-09-20

申请号：US13419230

申请日：2012-03-13

Applicant: Pietro Corona ,  Marco Ferrera ,  Igor Varisco ,  Roberto Campedelli

Inventor： Pietro Corona ,  Marco Ferrera ,  Igor Varisco ,  Roberto Campedelli

IPC: H04R3/00 ,  H01L29/84 ,  H01L21/02

CPC classification number: B81C1/00158 ,  B81B2201/0257 ,  B81B2203/0127 ,  B81C1/00293 ,  B81C2203/0145 ,  G01L9/0042 ,  G01L9/0073

Abstract: Disclosed herein is a microelectromechanical device and a process for manufacturing same. One or more embodiments may include forming a semiconductor structural layer separated from a substrate by a dielectric layer, and opening a plurality of trenches through the structural layer exposing a portion of the dielectric layer. A sacrificial portion of the dielectric layer is selectively removed through the plurality of trenches in membrane regions so as to free a corresponding portion of the structural layer to form a membrane. To close the trenches, the wafer is brought to an annealing temperature for a time interval in such a way as to cause migration of the atoms of the membrane so as to reach a minimum energy configuration.

Abstract translation: 本文公开了一种微机电装置及其制造方法。 一个或多个实施例可以包括通过电介质层形成与衬底分离的半导体结构层，以及通过暴露电介质层的一部分的结构层来打开多个沟槽。 电介质层的牺牲部分通过膜区域中的多个沟槽选择性地去除，以便释放结构层的相应部分以形成膜。 为了封闭沟槽，将晶片以这样的方式达到退火温度一段时间，使得膜的原子迁移以达到最小的能量构型。

公开(公告)号：US08633553B2

公开(公告)日：2014-01-21

申请号：US13190254

申请日：2011-07-25

Applicant: Marco Ferrera ,  Matteo Perletti ,  Igor Varisco ,  Luca Zanotti

Inventor： Marco Ferrera ,  Matteo Perletti ,  Igor Varisco ,  Luca Zanotti

IPC: H01L29/84 ,  H01L21/00

CPC classification number: B81C1/00119 ,  B01D67/0062 ,  B01D71/02 ,  B01D2325/021 ,  B01D2325/028 ,  B01L3/502707 ,  B01L3/502753 ,  B01L2300/0681 ,  B81B2201/10 ,  B81C1/00071 ,  B81C1/00087 ,  B81C2201/0133 ,  B81C2201/0157 ,  F04B19/006

Abstract: A process for manufacturing a micromechanical structure envisages: forming a buried cavity within a body of semiconductor material, separated from a top surface of the body by a first surface layer; and forming an access duct for fluid communication between the buried cavity and an external environment. The method envisages: forming an etching mask on the top surface at a first access area; forming a second surface layer on the top surface and on the etching mask; carrying out an etch such as to remove, in a position corresponding to the first access area, a portion of the second surface layer, and an underlying portion of the first surface layer not covered by the etching mask until the buried cavity is reached, thus forming both the first access duct and a filter element, set between the first access duct and the same buried cavity.

Abstract translation: 微机械结构的制造方法设想：在半导体材料体内形成通过第一表面层从主体顶表面分离的掩埋腔; 以及形成用于在所述掩埋腔和外部环境之间流体连通的进入管。 该方法设想：在第一进入区域的顶表面上形成蚀刻掩模; 在顶表面和蚀刻掩模上形成第二表面层; 进行蚀刻，以在对应于第一进入区域的位置中移除第二表面层的一部分，以及未被蚀刻掩模覆盖的第一表面层的下面部分，直到达到掩埋空腔，因此 形成第一进入管道和过滤元件，设置在第一进入管道和相同的掩埋空腔之间。

公开(公告)号：US09162876B2

公开(公告)日：2015-10-20

申请号：US13419230

申请日：2012-03-13

Applicant: Pietro Corona ,  Marco Ferrera ,  Igor Varisco ,  Roberto Campedelli

Inventor： Pietro Corona ,  Marco Ferrera ,  Igor Varisco ,  Roberto Campedelli

IPC: B81C1/00 ,  G01L9/00

CPC classification number: B81C1/00158 ,  B81B2201/0257 ,  B81B2203/0127 ,  B81C1/00293 ,  B81C2203/0145 ,  G01L9/0042 ,  G01L9/0073

Abstract: Disclosed herein is a microelectromechanical device and a process for manufacturing same. One or more embodiments may include forming a semiconductor structural layer separated from a substrate by a dielectric layer, and opening a plurality of trenches through the structural layer exposing a portion of the dielectric layer. A sacrificial portion of the dielectric layer is selectively removed through the plurality of trenches in membrane regions so as to free a corresponding portion of the structural layer to form a membrane. To close the trenches, the wafer is brought to an annealing temperature for a time interval in such a way as to cause migration of the atoms of the membrane so as to reach a minimum energy configuration.

Abstract translation: 本文公开了一种微机电装置及其制造方法。 一个或多个实施例可以包括通过电介质层形成与衬底分离的半导体结构层，以及通过暴露电介质层的一部分的结构层来打开多个沟槽。 电介质层的牺牲部分通过膜区域中的多个沟槽选择性地去除，以便释放结构层的相应部分以形成膜。 为了封闭沟槽，将晶片以这样的方式达到退火温度一段时间，使得膜的原子迁移以达到最小能量构型。

公开(公告)号：US20120018819A1

公开(公告)日：2012-01-26

申请号：US13190254

申请日：2011-07-25

Applicant: Marco Ferrera ,  Matteo Perletti ,  Igor Varisco ,  Luca Zanotti

Inventor： Marco Ferrera ,  Matteo Perletti ,  Igor Varisco ,  Luca Zanotti

IPC: H01L29/84 ,  H01L21/02

CPC classification number: B81C1/00119 ,  B01D67/0062 ,  B01D71/02 ,  B01D2325/021 ,  B01D2325/028 ,  B01L3/502707 ,  B01L3/502753 ,  B01L2300/0681 ,  B81B2201/10 ,  B81C1/00071 ,  B81C1/00087 ,  B81C2201/0133 ,  B81C2201/0157 ,  F04B19/006

Abstract: A process for manufacturing a micromechanical structure envisages: forming a buried cavity within a body of semiconductor material, separated from a top surface of the body by a first surface layer; and forming an access duct for fluid communication between the buried cavity and an external environment. The method envisages: forming an etching mask on the top surface at a first access area; forming a second surface layer on the top surface and on the etching mask; carrying out an etch such as to remove, in a position corresponding to the first access area, a portion of the second surface layer, and an underlying portion of the first surface layer not covered by the etching mask until the buried cavity is reached, thus forming both the first access duct and a filter element, set between the first access duct and the same buried cavity.

Abstract translation: 微机械结构的制造方法设想：在半导体材料体内形成通过第一表面层从主体顶表面分离的掩埋腔; 以及形成用于在所述掩埋腔和外部环境之间流体连通的进入管。 该方法设想：在第一进入区域的顶表面上形成蚀刻掩模; 在顶表面和蚀刻掩模上形成第二表面层; 进行蚀刻，以在对应于第一进入区域的位置中移除第二表面层的一部分，以及未被蚀刻掩模覆盖的第一表面层的下面部分，直到达到掩埋空腔，因此 形成第一进入管道和过滤元件，设置在第一进入管道和相同的掩埋空腔之间。