System and method for allocating multi-function resources for a wetdeck process in semiconductor wafer fabrication
    2.
    发明授权
    System and method for allocating multi-function resources for a wetdeck process in semiconductor wafer fabrication 有权
    用于在半导体晶片制造中为湿法工艺分配多功能资源的系统和方法

    公开(公告)号:US07184850B1

    公开(公告)日:2007-02-27

    申请号:US11263589

    申请日:2005-10-31

    Abstract: A system and method is disclosed for allocating multi-function resources among a plurality of tasks within a wetdeck process in semiconductor wafer fabrication. A resource allocator allocates multi-function resources among tasks within a process system that executes at least one application process. The resource allocator comprises a monitoring controller, model of the process system and a resource allocation controller. The monitoring controller monitors measurable characteristics associated with the executing application process, multi-function resources and tasks. The model represents the multi-function resources and the tasks, and defines relationships among them. The resource allocation controller operates the model in response to the monitored measurable characteristics and allocates ones of the multi-function resources among ones of the tasks to efficiently execute the wetdeck process of the semiconductor wafer fabrication process.

    Abstract translation: 公开了一种用于在半导体晶片制造中的湿地工艺中的多个任务之间分配多功能资源的系统和方法。 资源分配器在执行至少一个应用进程的进程系统内的任务之间分配多功能资源。 资源分配器包括监视控制器,过程系统的模型和资源分配控制器。 监视控制器监视与执行的应用进程相关的可测量特征,多功能资源和任务。 该模型代表多功能资源和任务,并定义了它们之间的关系。 资源分配控制器响应于可监测的可测量特性来操作模型,并且在任务之一中分配多个功能资源中的一个以有效地执行半导体晶片制造过程的湿法处理。

    Semiconductor structure with flared mesa burying layers
    3.
    发明授权
    Semiconductor structure with flared mesa burying layers 失效
    半导体结构具有扩张的台面埋层

    公开(公告)号:US4935936A

    公开(公告)日:1990-06-19

    申请号:US313636

    申请日:1989-02-22

    CPC classification number: H01L33/0062 H01S5/227 H01S5/2275

    Abstract: A semiconductor structure and methods for making it, for use in opto-electronic devices, employs only MOVPE growth steps. The structure is based on a mesa having substantially non-reentrant sides. To make it, an initial semiconductor structure is produced which comprises a substrate with a mesa thereon, the mesa having a self-aligned, central stripe of metal organic vapour phase growth suppressing material on its uppermost surface. Burying layers are then grown by MOVPE at either side of the mesa, the stripe removed, and covering layers grown over the mesa and adjoining regions of the burying layers. To make an opto-electronic device, a silica window can be formed on the uppermost surface of the covering layers and contacts provided through the window and to the remote face of the substrate. Two methods of making the initial semiconductor structure are described. Devices such as optical detectors and waveguides can be made using methods according to the invention. Particularly importantly, semiconductor lasers which will operate in a single transverse mode can be made.

    Pharmaceutical compositions containing a
2-carboxy-4-oxo-4H,-10H-(2)benzopyrano-(4,3-g)-(1) benzopyran or a salt
thereof and method of use
    9.
    发明授权
    Pharmaceutical compositions containing a 2-carboxy-4-oxo-4H,-10H-(2)benzopyrano-(4,3-g)-(1) benzopyran or a salt thereof and method of use 失效
    含有2-羧基-4-氧代-4H,-10H-(2)苯并吡喃并(4,3-g) - (1)苯并吡喃或其盐的药物组合物及其使用方法

    公开(公告)号:US3998962A

    公开(公告)日:1976-12-21

    申请号:US587331

    申请日:1975-06-16

    Abstract: Pharmaceutical dosage unit compositions containing as an active ingredient a compound of the formula ##STR1## wherein R.sub.1 is hydrogen or lower alkyl, R.sub.2, R.sub.4 and R.sub.5, which may be identical to or different from each other, are each hydrogen, lower alkyl, hydroxyl, lower alkoxy, acyloxy, halogen, nitro or --SO.sub.3 H, andR.sub.3 and R.sub.6, which may be identical to or different from each other, are each hydrogen, lower alkyl, hydroxyl, lower alkoxy, acyloxy, halogen, nitro, --SO.sub.3 H, hydroxycarbonyl-methoxy, .beta.-hydroxy-ethoxy or .beta.-amino-ethoxy,Or a salt thereof; and a method of using the same as antiallergics.

    Abstract translation: 作为活性成分的药物剂量单位组合物,其中R 1为氢或可以相同或不同的低级烷基,R 2,R 4和R 5各自为氢,低级烷基,羟基 ,低级烷氧基,酰氧基,卤素,硝基或-SO 3 H,R 3和R 6可以相同或不同,分别为氢,低级烷基,羟基,低级烷氧基,酰氧基,卤素,硝基,-SO3H, 羟基羰基 - 甲氧基,β-羟基 - 乙氧基或β-氨基 - 乙氧基,或其盐; 以及将其用作抗病毒的方法。

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