公开(公告)号：US06300636B1

公开(公告)日：2001-10-09

申请号：US09410899

申请日：1999-10-02

Applicant: Kuo-Pin Shih ,  Wen-Lung Ho

Inventor： Kuo-Pin Shih ,  Wen-Lung Ho

IPC: H01J2700

CPC classification number: H01J27/08

Abstract: An improved ion source head for use with an ion implantation machine includes an arc chamber within which a heated filament creates an ion plasma from a source gas. The source gas is introduced into the chamber evenly through at least four, but preferably six through hole openings in a bottom liner in the chamber. Even distribution of the gas entering the chamber reduces build-up and flaking of material in the chamber that can result in short circuits.

Abstract translation: 用于离子注入机的改进的离子源头包括电弧室，其中加热的细丝在其中产生源气体的离子等离子体。 源气体通过室中的底部衬垫中的至少四个，但优选六个通孔开口均匀地引入室中。 进入腔室的气体的均匀分布减少了室内材料的堆积和剥落，这可能导致短路。