Abstract:
A laser apparatus may include: a master oscillator configured to output a pulsed laser beam at a repetition rate, the master oscillator including at least one semiconductor laser apparatus; at least one amplifier configured to amplify the pulsed laser beam from the master oscillator, the at least one amplifier being configured to include at least one gain bandwidth; and a controller for controlling a parameter affecting an output wavelength of the pulsed laser beam from the master oscillator such that a wavelength chirping range of the pulsed laser beam from the master oscillator overlaps at least a part of the at least one gain bandwidth.
Abstract:
A system includes a chamber, a laser beam apparatus configured to generate a laser beam to be introduced into the chamber, a laser controller for the laser beam apparatus to control at least a beam intensity and an output timing of the laser beam, and a target supply unit configured to supply a target material into the chamber, the target material being irradiated with the laser beam for generating extreme ultraviolet light.
Abstract:
A method of controlling a laser apparatus may include: exchanging a gain medium in a chamber configured to output a laser beam by exciting the gain medium; first measuring, after the exchanging, pulse energy of a laser beam which is oscillated in the chamber under a specific gas pressure and a specific charge voltage; calculating an approximate expression indicating a relationship between the pulse energy of the laser beam and the gas pressure in the chamber and the charge voltage, or a table representing a correlationship between the pulse energy, the gas pressure and the charge voltage, based on the specific pressure, the specific charge voltage and the pulse energy in the first measuring; storing the approximate expression or the table; second measuring, after the first measuring, pulse energy Er of a laser beam oscillated in the chamber; calculating pulse energy Eec which is supposed to be obtained directly after the exchanging under the gas pressure and the charge voltage in the second measuring based on the approximate expression or the table; calculating a reduction amount ΔEd of pulse energy based on the pulse energy Eec and the pulse energy Er using ΔEd=Eec−Er; and calculating a partial gas exchange amount Q for partial gas exchange in the chamber based on the reduction amount ΔEd of pulse energy.
Abstract:
A chamber apparatus used with a laser apparatus may include: a chamber provided with at least one inlet through which a laser beam outputted from the laser apparatus enters the chamber; a target supply unit provided to the chamber for supplying a target material to a predetermined region inside the chamber; a magnetic field generation unit for generating a magnetic field in the predetermined region; and a charged particle collection unit disposed in a direction of a magnetic flux of the magnetic field for collecting a charged particle thereinto, the charged particle being generated when the target material is irradiated with the laser beam inside the chamber and traveling along the magnetic flux.
Abstract:
An upper limit and a lower limit are preliminarily set for a spectral line width common to a plurality of narrow-band laser devices. When delivered or subjected to maintenance, the narrow-band laser device is caused to laser oscillate to detect its spectral line width before it is used as a light source for semiconductor exposure. A spectral line width adjustment unit provided in the narrow-band laser device is adjusted so that the spectral line width assumes a value between the upper limit and the lower limit. The present invention is able to suppress the variation in spectral line width such as E95 bandwidth caused by machine differences during the manufacture of the laser device, or by replacement or maintenance of the laser device, whereby the quality of integrated circuit patterns formed by the semiconductor exposure tool can be stabilized.
Abstract:
An extreme ultraviolet light source apparatus comprises a laser apparatus having a master oscillator outputting one or more longitudinal-mode-laser lights, an amplifier with a molecular gas as an amplifying agency amplifying a longitudinal-mode laser light of which wavelength is included in one of amplifiable lines, and a controller adjusting the master oscillator so that the wavelength of the longitudinal-mode laser light outputted from the master oscillator is included in one of the amplifiable lines, the laser apparatus being used as a driver laser, wherein the laser apparatus irradiates a target material with a laser light for generating plasma, and the extreme ultraviolet light is emitted from the plasma and outputted from the extreme ultraviolet light source apparatus.
Abstract:
A chamber apparatus used with an external apparatus having an obscuration region may include: a chamber in which extreme ultraviolet light is generated; a collector mirror provided in the chamber for collecting the extreme ultraviolet light; a support for securing the collector mirror to the chamber; and an output port provided to the chamber for allowing the extreme ultraviolet light collected by the collector mirror to be introduced therethrough into the external apparatus.
Abstract:
A window unit may include: a window configured to allow a laser beam to be transmitted therethrough; and a holder for holding the window at a periphery thereof, the holder being provided with a flow channel thereinside configured to allow a fluid to flow.
Abstract:
An apparatus used with an external laser apparatus for generating extreme ultraviolet light includes a target storage unit for storing a target material, a nozzle unit having a through-hole in communication with the interior of the storage unit through which the target material is outputted, an electrode having a through-hole facing the nozzle unit, and a target detector for detecting a target formed of the target material and outputting a detection signal. A direct current voltage adjuster applies and adjusts a direct current between the target material and the electrode, a pressure adjuster applies and adjusts a pressure to the target material through gas, and a controller controls at least one of the direct current voltage adjuster and the pressure adjuster based on the detection signal from the target detector.
Abstract:
A chamber apparatus used with a laser apparatus may include a chamber, a beam expanding optical system, and a focusing optical system. The chamber may be provided with at least one inlet, through which a laser beam outputted from the laser apparatus is introduced into the chamber. The beam expanding optical system is configured to expand the laser beam in diameter. The focusing optical system is configured to focus the laser beam that has been expanded in diameter.