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    METHOD AND APPARATUS FOR FORMING A GRAPHENE PATTERN USING PEEL-OFF TECHNIQUE
    1.
    发明申请
    METHOD AND APPARATUS FOR FORMING A GRAPHENE PATTERN USING PEEL-OFF TECHNIQUE 审中-公开
    使用剥离技术形成图形图案的方法和装置

    公开(公告)号：US20150132488A1

    公开(公告)日：2015-05-14

    申请号：US14117582

    申请日：2012-05-10

    Applicant: Sun Sook Lee ,  Daesung Jung ,  Han Sun Kim ,  Ki-Seok An ,  Taek-Mo Chung ,  Chang Gyoun Kim ,  Young Kuk Lee

    Inventor： Sun Sook Lee ,  Daesung Jung ,  Han Sun Kim ,  Ki-Seok An ,  Taek-Mo Chung ,  Chang Gyoun Kim ,  Young Kuk Lee

    IPC: B32B43/00 ,  C23C16/56 ,  C23C16/26

    CPC classification number: B32B43/006 ,  B32B2313/04 ,  B81C1/00492 ,  B81C99/0025 ,  C23C16/26 ,  C23C16/56 ,  H01L21/304 ,  Y10T156/195

    Abstract: The present invention relates to a graphene pattern forming method using a delamination technique employing a polymer stamp. The technique is adequate for forming a graphene pattern having a an arbitrary target pattern. According to the present invention, a portion of a graphene layer formed on a substrate is physically and selectively delaminated using the polymer stamp to simply and easily form a desired graphene pattern having a uniform line width on the substrate. Also, a portion of the graphene layer formed on the substrate is physically and selectively delaminated in a roll-to-roll manner using a rotating body stamp or by using a stamp having a large area to simply and easily form a desired graphene pattern having a uniform line width on the a substrate having a large area.

    Abstract translation: 本发明涉及使用聚合物印模的分层技术的石墨烯图案形成方法。 该技术足以形成具有任意目标图案的石墨烯图案。 根据本发明，使用聚合物印模在基板上形成的石墨烯层的一部分被物理上和选择性地分层，以简单且容易地在基板上形成具有均匀线宽的所需石墨烯图案。 此外，形成在基板上的石墨烯层的一部分使用旋转体印模以卷对卷的方式物理地和选择性地分层，或者通过使用具有大面积的印模简单且容易地形成所需的石墨烯图案，其具有 具有大面积的基板上的均匀线宽度。

    NOVEL TIN AMINO-ALKOXIDE COMPLEXES AND PROCESS FOR PREPARING THEREOF
    2.
    发明申请
    NOVEL TIN AMINO-ALKOXIDE COMPLEXES AND PROCESS FOR PREPARING THEREOF 有权
    新型氨基烷基氧化物复合物及其制备方法

    公开(公告)号：US20090275770A1

    公开(公告)日：2009-11-05

    申请号：US12407526

    申请日：2009-03-19

    Applicant: Chang Gyoun KIM ,  Taek-Mo CHUNG ,  Young Kuk LEE ,  Ki-Seok AN ,  Sun Sook LEE ,  Beyong Hwan RYU ,  Se Jin JANG

    Inventor： Chang Gyoun KIM ,  Taek-Mo CHUNG ,  Young Kuk LEE ,  Ki-Seok AN ,  Sun Sook LEE ,  Beyong Hwan RYU ,  Se Jin JANG

    IPC: C07F7/22

    CPC classification number: C07F7/2204

    Abstract: The present invention relates to novel tin amino-alkoxide complexes and a method for preparing the same, precisely novel tin amino-alkoxide complexes represented by formula 1 and useful as a precursor for tin and tin oxide thin films and a precursor for the production of nano-sized tin and tin oxide particles and a method for preparing the same. In formula 1, A is linear or branched (C2-C10) alkylene substituted or not substituted with halogen; R1 and R2 are independently linear or branched (C1-C7) alkyl substituted or not substituted with halogen. Sn[O-A-NR1R2]2  [Formula 1]

    Abstract translation: 本发明涉及新的锡氨基 - 烷氧化物络合物及其制备方法，精细新型的由式1表示的锡氨基 - 醇盐络合物，可用作锡和锡氧化物薄膜的前体和用于生产纳米粒子的前体 锡和锡氧化物颗粒及其制备方法。 在式1中，A是被卤素取代或未被取代的直链或支链（C2-C10）亚烷基; R1和R2独立地是被卤素取代或未被取代的直链或支链（C1-C7）烷基。 Sn [O-A-NR1R2] 2 [式1]

    Tin amino-alkoxide complexes and process for preparing thereof
    5.
    发明授权
    Tin amino-alkoxide complexes and process for preparing thereof 有权
    锡氨基烷氧基络合物及其制备方法

    公开(公告)号：US08030507B2

    公开(公告)日：2011-10-04

    申请号：US12407526

    申请日：2009-03-19

    Applicant: Chang Gyoun Kim ,  Taek-Mo Chung ,  Young Kuk Lee ,  Ki-Seok An ,  Sun Sook Lee ,  Beyong Hwan Ryu ,  Se Jin Jang

    Inventor： Chang Gyoun Kim ,  Taek-Mo Chung ,  Young Kuk Lee ,  Ki-Seok An ,  Sun Sook Lee ,  Beyong Hwan Ryu ,  Se Jin Jang

    IPC: C07F7/22

    CPC classification number: C07F7/2204

    Abstract: The present invention relates to novel tin amino-alkoxide complexes and a method for preparing the same, precisely novel tin amino-alkoxide complexes represented by formula 1 and useful as a precursor for tin and tin oxide thin films and a precursor for the production of nano-sized tin and tin oxide particles and a method for preparing the same. In formula 1, A is linear or branched (C2-C10) alkylene substituted or not substituted with halogen; R1 and R2 are independently linear or branched (C1-C7) alkyl substituted or not substituted with halogen. Sn[O-A-NR1R2]2  [Formula 1]

    Abstract translation: 本发明涉及新的锡氨基 - 烷氧化物络合物及其制备方法，精细新型的由式1表示的锡氨基 - 醇盐络合物，可用作锡和锡氧化物薄膜的前体和用于生产纳米粒子的前体 锡和锡氧化物颗粒及其制备方法。 在式1中，A是被卤素取代或未被取代的直链或支链（C2-C10）亚烷基; R1和R2独立地是被卤素取代或未被取代的直链或支链（C1-C7）烷基。 Sn [O-A-NR1R2] 2 [式1]

    Method of depositing nanolaminate film for non-volatile floating gate memory devices by atomic layer deposition
    6.
    发明授权
    Method of depositing nanolaminate film for non-volatile floating gate memory devices by atomic layer deposition 失效
    通过原子层沉积法沉积用于非挥发性浮栅存储器件的纳米压电薄膜的方法

    公开(公告)号：US07659215B2

    公开(公告)日：2010-02-09

    申请号：US11846768

    申请日：2007-08-29

    Applicant: Chang-Gyoun Kim ,  Young-Kuk Lee ,  Taek-Mo Chung ,  Ki-Seok An ,  Sun-Sook Lee ,  Won-Tae Cho

    Inventor： Chang-Gyoun Kim ,  Young-Kuk Lee ,  Taek-Mo Chung ,  Ki-Seok An ,  Sun-Sook Lee ,  Won-Tae Cho

    IPC: H01L21/469 ,  H01L21/31 ,  H01L23/58 ,  H01L23/52 ,  H01L23/48 ,  H01L29/40 ,  H01L21/28

    CPC classification number: H01L21/3142 ,  H01L21/02175 ,  H01L21/02178 ,  H01L21/02181 ,  H01L21/02189 ,  H01L21/022 ,  H01L21/0228 ,  H01L21/28282 ,  H01L21/3162

    Abstract: Disclosed herein is a method of depositing a nanolaminate film for next-generation non-volatile floating gate memory devices by atomic layer deposition. The method includes the steps of: introducing a substrate into an atomic layer deposition reactor; forming on the substrate a first high-dielectric-constant layer by alternately supplying an oxygen source and a metal source selected from among an aluminum source, a zirconium source and a hafnium source; forming on the first high-dielectric-constant layer a nickel oxide layer by alternately supplying a nickel source and an oxygen source; and forming on the nickel oxide layer a second high-dielectric-constant layer by alternately supplying an oxygen source and a metal source selected from among an aluminum source, a zirconium source and a hafnium source. The nanolaminate film deposited according to the method shows good memory window characteristics compared to those of memory devices fabricated using nanocrystal floating gates according to the prior physical vapor deposition methods, and thus can be applied to non-volatile floating gate memory devices.

    Abstract translation: 本文公开了一种通过原子层沉积沉积下一代非易失性浮动栅极存储器件的纳米压电薄膜的方法。 该方法包括以下步骤：将衬底引入原子层沉积反应器; 通过交替地供给来自铝源，锆源和铪源的氧源和金属源，在衬底上形成第一高介电常数层; 通过交替地供给镍源和氧源，在第一高介电常数层上形成氧化镍层; 以及通过交替地供应氧源和选自铝源，锆源和铪源的金属源，在氧化镍层上形成第二高介电常数层。 与根据先前的物理气相沉积方法使用纳米晶体浮栅制造的存储器件相比，根据该方法沉积的纳米层压膜显示出良好的存储窗口特性，因此可以应用于非易失性浮动栅极存储器件。

    METHOD OF DEPOSITING NANOLAMINATE FILM FOR NON-VOLATILE FLOATING GATE MEMORY DEVICES BY ATOMIC LAYER DEPOSITION
    7.
    发明申请
    METHOD OF DEPOSITING NANOLAMINATE FILM FOR NON-VOLATILE FLOATING GATE MEMORY DEVICES BY ATOMIC LAYER DEPOSITION 失效
    通过原子层沉积沉积非挥发性气泡记忆体装置的纳米薄膜的方法

    公开(公告)号：US20080054332A1

    公开(公告)日：2008-03-06

    申请号：US11846768

    申请日：2007-08-29

    Applicant: Chang-Gyoun KIM ,  Young-Kuk LEE ,  Taek-Mo CHUNG ,  Ki-Seok AN ,  Sun-Sook LEE ,  Won-Tae CHO

    Inventor： Chang-Gyoun KIM ,  Young-Kuk LEE ,  Taek-Mo CHUNG ,  Ki-Seok AN ,  Sun-Sook LEE ,  Won-Tae CHO

    IPC: H01L29/788 ,  H01L21/31

    CPC classification number: H01L21/3142 ,  H01L21/02175 ,  H01L21/02178 ,  H01L21/02181 ,  H01L21/02189 ,  H01L21/022 ,  H01L21/0228 ,  H01L21/28282 ,  H01L21/3162

    Abstract: Disclosed herein is a method of depositing a nanolaminate film for next-generation non-volatile floating gate memory devices by atomic layer deposition. The method includes the steps of: introducing a substrate into an atomic layer deposition reactor; forming on the substrate a first high-dielectric-constant layer by alternately supplying an oxygen source and a metal source selected from among an aluminum source, a zirconium source and a hafnium source; forming on the first high-dielectric-constant layer a nickel oxide layer by alternately supplying a nickel source and an oxygen source; and forming on the nickel oxide layer a second high-dielectric-constant layer by alternately supplying an oxygen source and a metal source selected from among an aluminum source, a zirconium source and a hafnium source. The nanolaminate film deposited according to the method shows good memory window characteristics compared to those of memory devices fabricated using nanocrystal floating gates according to the prior physical vapor deposition methods, and thus can be applied to non-volatile floating gate memory devices.

    Abstract translation: 本文公开了一种通过原子层沉积沉积下一代非易失性浮动栅极存储器件的纳米压电薄膜的方法。 该方法包括以下步骤：将衬底引入原子层沉积反应器; 通过交替地供给来自铝源，锆源和铪源的氧源和金属源，在衬底上形成第一高介电常数层; 通过交替地供给镍源和氧源，在第一高介电常数层上形成氧化镍层; 以及通过交替地供应氧源和选自铝源，锆源和铪源的金属源，在氧化镍层上形成第二高介电常数层。 与根据先前的物理气相沉积方法使用纳米晶体浮栅制造的存储器件相比，根据该方法沉积的纳米层压膜显示出良好的存储窗口特性，因此可以应用于非易失性浮动栅极存储器件。

    Method for preparation of aluminum oxide thin film
    10.
    发明申请
    Method for preparation of aluminum oxide thin film 审中-公开
    氧化铝薄膜的制备方法

    公开(公告)号：US20050271817A1

    公开(公告)日：2005-12-08

    申请号：US10523374

    申请日：2003-07-29

    Applicant: Yunsoo Kim ,  Ki-Seok An ,  Sun-Sook Lee ,  Taek-Mo Chung ,  Wontae Cho ,  Kiwhan Sung

    Inventor： Yunsoo Kim ,  Ki-Seok An ,  Sun-Sook Lee ,  Taek-Mo Chung ,  Wontae Cho ,  Kiwhan Sung

    IPC: C23C16/40 ,  C23C16/44 ,  C23C16/455 ,  C23C16/00

    CPC classification number: C23C16/45553 ,  C23C16/403

    Abstract: An aluminum oxide film is formed on a substrate by a process comprising A) bringing the vapor of a dialkylaluminum alkoxide into contact with the substrate mounted in a deposition reactor so that an aluminum-containing adsorption layer is formed on the substrate; B) removing the unreacted aluminum compound and by-products from the reactor; C) introducing an oxygen source into the reactor so that the oxygen source reacts with the aluminum-containing adsorption layer to form an aluminum oxide layer, and D) removing the unreacted oxygen source and by-products from the reactor.

    Abstract translation: 通过包括以下方法在基材上形成氧化铝膜：A）使二烷基铝醇盐的蒸气与安装在沉积反应器中的基板接触，使得在基板上形成含铝吸附层; B）从反应器中除去未反应的铝化合物和副产物; C）将氧源引入反应器，使得氧源与含铝吸附层反应形成氧化铝层，以及D）从反应器中除去未反应的氧源和副产物。

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