公开(公告)号：US5430300A

公开(公告)日：1995-07-04

申请号：US226397

申请日：1994-04-12

Applicant: Wing K. Yue ,  Donald L. Parker ,  Mark H. Weichold

Inventor： Wing K. Yue ,  Donald L. Parker ,  Mark H. Weichold

IPC: H01J1/304 ,  H01J9/02 ,  H01J21/04 ,  H01J21/10 ,  H01J37/073

CPC classification number: H01J21/105 ,  H01J1/3042 ,  H01J21/04 ,  H01J9/025

Abstract: A low voltage vacuum field emission device and method for manufacturing is provided. The devices are fabricated by anodizing a heavily doped silicon wafer substrate (12) in concentrated HF solution, forming extremely sharp silicon tips (18) at the silicon to porous silicon interface. The resulting porous silicon layer is then oxidized, and a metal film (22) is deposited by evaporation on the porous silicon. Silicon substrate (12) is the cathode, and metal film dots (22) are the anodes. The I-V characteristics for the field emission devices follow Fowler-Nordheim curves over three decades of current. The I-V characteristics are also utterly independent of temperature up to 250.degree. C. When the oxidized porous silicon layer (OPSL) is about 5000 .ANG., substantial current is obtained with less than 10 volts. Recent experiments leave no doubt that the charge transport is in the vacuum of the pores. A silicon wafer that contains an OPSL may prove to be a very useful material for the fabrication of low voltage, low noise field emitters for vacuum microelectronics.

Abstract translation: 提供一种低压真空场发射装置及其制造方法。 这些器件通过在浓HF溶液中阳极氧化重掺杂的硅晶片衬底（12）来制造，在硅处形成极其尖锐的硅尖端（18）到多孔硅界面。 然后将所得到的多孔硅层氧化，并通过蒸发将金属膜（22）沉积在多孔硅上。 硅基板（12）是阴极，金属膜点（22）是阳极。 现场发射装置的I-V特性符合Fowler-Nordheim曲线，经过三十年的电流。 I-V特性也完全独立于高达250℃的温度。当氧化的多孔硅层（OPSL）为约5000时，获得的电流小于10伏。 最近的实验毫无疑问地，电荷输送在孔的真空中。 含有OPSL的硅晶片可能被证明是制造用于真空微电子学的低电压，低噪声场发射器的非常有用的材料。