公开(公告)号：US06971165B1

公开(公告)日：2005-12-06

申请号：US10417494

申请日：2003-04-17

Applicant: Avto Tavkhelidze

Inventor： Avto Tavkhelidze

IPC: H01J1/02 ,  H01J21/04 ,  H01R9/00

CPC classification number: H01J21/04 ,  H01J1/02 ,  Y10T29/413 ,  Y10T29/49128 ,  Y10T29/49147 ,  Y10T29/49156

Abstract: An improved method for manufacturing a matching pair of electrodes comprises the steps of: fabricating a first electrode with a substantially flat surface; depositing islands of an oxidizable material over regions of the surface; depositing a layer of a third material over the surface of the first electrode to form a second electrode; separating the first electrode from the second electrode; oxidizing the islands of oxidizable material, which causes the islands to expand; bringing the upper electrode and the lower electrode into close proximity, whereupon the expanded island of oxidizable material touches the upper surface and creates an insulating gap between the two surfaces, thereby forming a matching pairs of electrodes.

Abstract translation: 用于制造匹配的电极对的改进方法包括以下步骤：制造具有基本平坦表面的第一电极; 在表面的区域上沉积可氧化材料的岛; 在所述第一电极的表面上沉积第三材料层以形成第二电极; 将第一电极与第二电极分离; 氧化可氧化物质的岛屿，这导致岛屿扩张; 使上部电极和下部电极紧密接合，由此扩大的可氧化材料岛接触上表面并在两个表面之间形成绝缘间隙，由此形成一对匹配的电极对。

公开(公告)号：US5644188A

公开(公告)日：1997-07-01

申请号：US438023

申请日：1995-05-08

Applicant: Michael D. Potter

Inventor： Michael D. Potter

IPC: H01J3/02 ,  H01J9/02 ,  H01J21/04 ,  H01J21/10 ,  H01J31/12 ,  H01J1/16 ,  H01J19/24

CPC classification number: H01J21/04 ,  H01J21/105 ,  H01J3/022 ,  H01J31/127 ,  H01J9/025

Abstract: A lateral-emitter field emission device has a thin-film emitter cathode 50 which has thickness of not more than several hundred angstroms and has an edge or tip 110 having a small radius of curvature. To form a novel display cell structure, a cathodoluminescent phosphor anode 60 is positioned below the plane of the thin-film lateral-emitter cathode 50, allowing a large portion of the phosphor anode's top surface to emit light in the desired direction. An anode contact layer contacts the phosphor anode 60 from below to form a buried anode contact 90 which does not interfere with light emission. The anode phosphor is precisely spaced apart from the cathode edge or tip and receives electrons emitted by field emission from the edge or tip of the lateral-emitter cathode, when a small bias voltage is applied. The device may be configured as a diode, triode, or tetrode, etc. having one or more control electrodes 140 and/or 170 positioned to allow control of current from the emitter to the phosphor anode by an electrical signal applied to the control electrode. In a particularly simple embodiment, a single control electrode 140 is positioned in a plane below the emitter edge or tip 110 and automatically aligned to that edge. The display cell structure may be repeated many times in an array, and the display cell structure of the invention lends itself to novel array structures which are also disclosed.

Abstract translation: 横向发射极场发射器件具有薄膜发射极阴极50，薄膜发射极阴极50具有不超过几百埃的厚度，并具有具有小曲率半径的边缘或尖端110。 为了形成新颖的显示单元结构，阴极发光磷光体阳极60位于薄膜侧向发射极阴极50的平面的下方，允许荧光体阳极的顶表面的大部分在期望的方向上发光。 阳极接触层从下方接触荧光体阳极60，以形成不干扰光发射的掩埋阳极接触90。 当施加小的偏置电压时，阳极磷光体与阴极边缘或尖端精确地间隔开并且接收从侧向发射极阴极的边缘或尖端的场发射发射的电子。 该器件可以被配置为具有一个或多个控制电极140和/或170的二极管，三极管或四极管等，其被定位成允许通过施加到控制电极的电信号来控制从发射极到磷光体阳极的电流。 在特别简单的实施例中，单个控制电极140定位在发射器边缘或尖端110下方的平面中并自动对准该边缘。 显示单元结构可以在阵列中重复多次，并且本发明的显示单元结构本身也被公开了新颖的阵列结构。

公开(公告)号：US5175468A

公开(公告)日：1992-12-29

申请号：US798526

申请日：1991-11-26

Applicant: Gianfranco Cirri

Inventor： Gianfranco Cirri

IPC: H01J21/04 ,  H01J3/02 ,  H01J37/04 ,  H01J37/24

CPC classification number: H01J37/243 ,  H01J3/027 ,  H01J37/045 ,  H01J2237/0432

Abstract: An electron gun and a high tension switch permits the achievement of high-power electron beams which are ON-OFF modulated by DC up to frequencies exceeding kHz. The electron gun has a cathode, at least two accelerating electrodes, a cathode heater, and a possible focussing system. The or each accelerating voltage, generated by any source, which may in the case of space applications also be a tether, is applied between accelerating electrodes and cathode, with the exception of an appropriate accelerating electrode to which there is applied, by of the switch, alternately its accelerating voltage or the same voltage as that of the cathode, obtaining an ON-OFF modulation of the electron beam emitted by the gun.

公开(公告)号：US20050247929A1

公开(公告)日：2005-11-10

申请号：US11134800

申请日：2005-05-23

Applicant: Alexander Kastalsky ,  Sergey Shokhor

Inventor： Alexander Kastalsky ,  Sergey Shokhor

IPC: H01J19/24 ,  H01J21/04 ,  H01J21/10 ,  H01L29/10

CPC classification number: H01J19/24 ,  B82Y10/00 ,  H01J21/04 ,  H01J21/105 ,  H01J2201/30469 ,  Y10S977/876 ,  Y10S977/938

Abstract: New, hybrid vacuum electronic devices are proposed, in which the electrons are extracted from the nanotube into vacuum. Each nanotube is either placed on the cathode electrode individually or grown normally to the cathode plane. Arrays of the nanotubes are also considered to multiply the output current. Two- and three-terminal device configurations are discussed. In all the cases considered, the device designs are such that both input and output capacitances are extremely low, while the efficiency of the electron extraction into vacuum is very high, so that the estimated operational frequencies are expected to be in a tera-hertz range. New vacuum triode structure with ballistic electron propagation along the nanotube is also considered.

Abstract translation: 提出了新的混合真空电子器件，其中电子从纳米管提取到真空中。 每个纳米管或者单独地放置在阴极电极上或正常地生长到阴极平面。 纳米管阵列也被认为是乘以输出电流。 讨论了两端和三端设备配置。 在所有考虑的情况下，器件设计使得输入和输出电容都非常低，而电子提取到真空中的效率非常高，所以估计的工作频率预期为tera-Hz范围 。 也考虑了具有沿纳米管的弹道电子传播的新的真空三极管结构。

公开(公告)号：US5675972A

公开(公告)日：1997-10-14

申请号：US719792

申请日：1996-09-25

Applicant: Jonathan Sidney Edelson

Inventor： Jonathan Sidney Edelson

IPC: F25B21/00 ,  H01J21/04 ,  H01J21/10 ,  H01J45/00 ,  H01J1/05

CPC classification number: F25B21/00 ,  H01J21/04 ,  H01J21/105 ,  H01J45/00 ,  F25B2321/003 ,  H01J2201/30426 ,  Y02B30/66

Abstract: Vacuum diode-based devices, including Vacuum Diode Heat Pumps and Vacuum Thermionic Generators, are described in which the electrodes are coated with an electride. These materials have low work functions, which means that contact potential difference between cathode and anode may be set against the effects of space charge, resulting in an improved device whereby anode and cathode may be set at a greater distance from each other than has been previously envisaged.

Abstract translation: 描述了真空二极管的装置，其中包括真空二极管热泵和真空热电偶发生器，其中电极涂覆有电极。 这些材料具有低功函数，这意味着阴极和阳极之间的接触电位差可以针对空间电荷的影响来设定，从而得到改进的装置，由此阳极和阴极可以被设置在彼此之前比之前更大的距离 设想了

公开(公告)号：US5430300A

公开(公告)日：1995-07-04

申请号：US226397

申请日：1994-04-12

Applicant: Wing K. Yue ,  Donald L. Parker ,  Mark H. Weichold

Inventor： Wing K. Yue ,  Donald L. Parker ,  Mark H. Weichold

IPC: H01J1/304 ,  H01J9/02 ,  H01J21/04 ,  H01J21/10 ,  H01J37/073

CPC classification number: H01J21/105 ,  H01J1/3042 ,  H01J21/04 ,  H01J9/025

Abstract: A low voltage vacuum field emission device and method for manufacturing is provided. The devices are fabricated by anodizing a heavily doped silicon wafer substrate (12) in concentrated HF solution, forming extremely sharp silicon tips (18) at the silicon to porous silicon interface. The resulting porous silicon layer is then oxidized, and a metal film (22) is deposited by evaporation on the porous silicon. Silicon substrate (12) is the cathode, and metal film dots (22) are the anodes. The I-V characteristics for the field emission devices follow Fowler-Nordheim curves over three decades of current. The I-V characteristics are also utterly independent of temperature up to 250.degree. C. When the oxidized porous silicon layer (OPSL) is about 5000 .ANG., substantial current is obtained with less than 10 volts. Recent experiments leave no doubt that the charge transport is in the vacuum of the pores. A silicon wafer that contains an OPSL may prove to be a very useful material for the fabrication of low voltage, low noise field emitters for vacuum microelectronics.

Abstract translation: 提供一种低压真空场发射装置及其制造方法。 这些器件通过在浓HF溶液中阳极氧化重掺杂的硅晶片衬底（12）来制造，在硅处形成极其尖锐的硅尖端（18）到多孔硅界面。 然后将所得到的多孔硅层氧化，并通过蒸发将金属膜（22）沉积在多孔硅上。 硅基板（12）是阴极，金属膜点（22）是阳极。 现场发射装置的I-V特性符合Fowler-Nordheim曲线，经过三十年的电流。 I-V特性也完全独立于高达250℃的温度。当氧化的多孔硅层（OPSL）为约5000时，获得的电流小于10伏。 最近的实验毫无疑问地，电荷输送在孔的真空中。 含有OPSL的硅晶片可能被证明是制造用于真空微电子学的低电压，低噪声场发射器的非常有用的材料。

公开(公告)号：US5389796A

公开(公告)日：1995-02-14

申请号：US171408

申请日：1993-12-22

Applicant: Sung-Weon Kang ,  Jin-Yeong Kang

Inventor： Sung-Weon Kang ,  Jin-Yeong Kang

IPC: H01J21/06 ,  H01J1/34 ,  H01J9/12 ,  H01J17/06 ,  H01J19/24 ,  H01J21/04 ,  H01J40/16 ,  H01L21/331 ,  H01L31/12 ,  H01L29/06

CPC classification number: H01J1/34 ,  H01J17/066 ,  H01J21/04

Abstract: A vacuum transistor having an optical gate in which an optical signal is radiated from the optical gate. The transistor has a silicon substrate; an insulating layer deposited on said silicon substrate, the insulating layer having a recess portion formed by an etching method; an optical source for radiating the optical signal and serving as said optical gate; and two electrodes formed on said insulating layer and separated from each other under a vacuum or an atmosphere. One of the electrodes receives the optical signal and is an electron emitting electrode for emitting electrons, and the other electrode is an electron collecting electrode for collecting the electrons emitted from said electron emitting electrode. The electron emitting electrode is formed beneath said optical source under a vacuum or an atmosphere and is connected to ground; and said electron collecting electrode is connected to a power source. The amount of current flowing in said electron collecting electrode may be adjusted by the intensity of the optical signal from said optical source. The mobility of electrons between the electron emitting electrode and the electron collecting electrode is further improved owing to a vacuum state or an atmosphere state of the electron transferring path.

Abstract translation: 一种具有光栅的真空晶体管，其中光信号从光栅辐射。 晶体管具有硅衬底; 沉积在所述硅衬底上的绝缘层，所述绝缘层具有通过蚀刻方法形成的凹部; 用于辐射光信号并用作所述光栅的光源; 以及形成在所述绝缘层上并在真空或大气中彼此分离的两个电极。 一个电极接收光信号，并且是用于发射电子的电子发射电极，另一个电极是用于收集从所述电子发射电极发射的电子的电子收集电极。 电子发射电极在真空或大气下在所述光源下面形成并连接到地面; 并且所述电子收集电极连接到电源。 可以通过来自所述光源的光信号的强度来调节在所述电子收集电极中流动的电流量。 由于电子传输路径的真空状态或气氛状态，电子发射电极和电子收集电极之间的电子迁移率进一步提高。

公开(公告)号：US2405915A

公开(公告)日：1946-08-13

申请号：US51440943

申请日：1943-12-15

Applicant: PHILCO CORP

Inventor： VANSANT JOHN S

IPC: H01J21/04

CPC classification number: H01J21/04

公开(公告)号：US10483074B2

公开(公告)日：2019-11-19

申请号：US14658797

申请日：2015-03-16

Applicant: BRITISH TELECOMMUNICATIONS public limited company

Inventor： Robert Ghanea-Hercock

IPC: H01J19/04 ,  H01J9/18 ,  H01J21/04 ,  B05D1/26 ,  B05D1/36 ,  H01J19/08 ,  H01J21/10 ,  B29C64/188 ,  B29C64/00 ,  B33Y10/00 ,  B33Y30/00 ,  B33Y80/00

Abstract: A method of manufacturing an article with integral active electronic component uses an additive manufacturing process to: a) form a non-electrically conductive substrate; b) form a non-electrically conductive perforated layer having an aperture; c) form electrically conductive anode and cathode elements spaced in the aperture; d) deposit a conductive electrical connection to each of the elements suitable for imparting an electrical potential difference between the elements; e) form a non-electrically conductive sealing layer atop the perforated layer so as to retain and seal the aperture in the perforated layer.

公开(公告)号：US20170345610A1

公开(公告)日：2017-11-30

申请号：US15675835

申请日：2017-08-14

Applicant: BRITISH TELECOMMUNICATIONS public limited company

Inventor： Robert GHANEA-HERCOCK

IPC: H01J19/04 ,  H01J21/04 ,  H01J19/08 ,  B05D1/26 ,  B29C64/188 ,  H01J21/10 ,  B05D1/36 ,  B33Y10/00 ,  B33Y80/00 ,  B33Y30/00

CPC classification number: H01J19/04 ,  B05D1/265 ,  B05D1/36 ,  B29C64/00 ,  B29C64/188 ,  B33Y10/00 ,  B33Y30/00 ,  B33Y80/00 ,  H01J19/08 ,  H01J21/04 ,  H01J21/10

Abstract: A method of manufacturing an article with integral active electronic component comprising: using an additive manufacturing process to: a) form a non-electrically conductive substrate; b) form a non-electrically conductive perforated layer having an aperture; c) form electrically conductive anode and cathode elements spaced in the aperture; d) deposit a conductive electrical connection to each of the elements suitable for imparting an electrical potential difference between the elements; e) form a non-electrically conductive sealing layer atop the perforated layer so as to retain and seal the aperture in the perforated layer.