INSULATING METAL SUBSTRATE STRUCTURE

    公开(公告)号:US20220418079A1

    公开(公告)日:2022-12-29

    申请号:US17358150

    申请日:2021-06-25

    Abstract: An insulating metal substrate structure is provided. The insulating metal substrate structure includes an electrically-insulating layer, a plurality of metal layers, a plurality of electrically-insulating heat-conductive layers, and a heat-dissipation layer. The plurality of electrically-insulating heat-conductive layers are formed on the heat-dissipation layer. The electrically-insulating layer surrounds the plurality of metal layers, such that the plurality of metal layers are separated into different regions in a different region to form a predetermined circuit pattern. The electrically-insulating layer has at least one recessed corner structure that is configured to position the electrically-insulating heat-conductive layers filled between one of the metal layers and the heat-dissipation layer.

    THERMALLY CONDUCTIVE AND ELECTRICALLY INSULATING SUBSTRATE

    公开(公告)号:US20220399244A1

    公开(公告)日:2022-12-15

    申请号:US17343745

    申请日:2021-06-10

    Abstract: A thermally conductive and electrically insulating substrate is provided. The thermally conductive and electrically insulating substrate includes a thermally conductive base, an electrically insulating layer, and one or more metal sheets. The electrically insulating layer is disposed on the thermally conductive base, and the one or more metal sheets are disposed on the electrically insulating layer. The metal sheet is allowed to have one or more chips arranged thereon, and a surface of the metal sheet where the metal sheet is allowed to be engaged with the chip is not parallel to a surface of the electrically insulating layer where the electrically insulating layer is mated with the metal sheet.

    IGBT MODULE WITH HEAT DISSIPATION STRUCTURE HAVING SPECIFIC LAYER THICKNESS RATIO

    公开(公告)号:US20220230932A1

    公开(公告)日:2022-07-21

    申请号:US17151203

    申请日:2021-01-17

    Abstract: An IGBT module with a heat dissipation structure having a specific layer thickness ratio includes a layer of IGBT chips, an upper bonding layer, a circuit layer, an insulating layer, and a heat dissipation layer. The insulating layer is disposed on the heat dissipation layer, the circuit layer is disposed on the insulating layer, the upper bonding layer is disposed on the circuit layer, and the layer of IGBT chips is disposed on the upper bonding layer. A thickness of the insulating layer is less than 0.2 mm, a thickness of the circuit layer is between 1.5 mm and 3 mm, and a thickness ratio of the circuit layer to the insulating layer is greater than or equal to 7.5:1.

    ETCHING METHOD FOR MANUFACTURING SUBSTRATE STRUCTURE HAVING THICK ELECTRICALLY CONDUCTIVE LAYER, AND SUBSTRATE STRUCTURE HAVING THICK ELECTRICALLY CONDUCTIVE LAYER

    公开(公告)号:US20230199969A1

    公开(公告)日:2023-06-22

    申请号:US17552907

    申请日:2021-12-16

    CPC classification number: H05K3/061 H05K1/0207 H05K2201/0166

    Abstract: An etching method for manufacturing a substrate structure having a thick electrically conductive layer, and a substrate structure having a thick electrically conductive layer are provided. The etching method includes providing an electrically insulating substrate structure including a thermally conductive and electrically insulating layer, an electrically conductive layer, and a non-photosensitive polymer masking layer, removing one part of the non-photosensitive polymer masking layer and one part of the electrically conductive layer by a machining process to form at least one electrically conductive recess having the electrically conductive layer exposed, forming a predetermined thickness ratio between a thickness of the electrically conductive recess and a thickness of the electrically conductive layer, removing a reserved part of the electrically conductive layer between a bottom wall of the electrically conductive recess and a bottom surface of the electrically conductive layer, and removing a remaining part of the non-photosensitive polymer masking layer.

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