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公开(公告)号：US20210048108A1
公开(公告)日：2021-02-18
申请号：US16542798
申请日：2019-08-16
Applicant: APPLIED MATERIALS, INC.
Inventor： Andrew Nguyen , Yogananda Sarode Vishwanath , Xue Chang , Anilkumar Rayaroth , Chetan Naik , Balachandra Jatak Narayan
IPC: F16K1/42
Abstract: Embodiments of symmetric flow valves for use in a substrate processing chamber are provided herein. In some embodiments, a symmetric flow valve includes a valve body having sidewalls, a bottom plate, and a top plate that together define an interior volume, wherein the top plate includes one or more axisymmetrically disposed openings; a poppet disposed in the interior volume, wherein the poppet includes a central opening and a plurality of portions configured to selectively seal the one or more axisymmetrically disposed openings of the top plate when the symmetric flow valve is in a closed position; and a first actuator coupled to the poppet to position the poppet within the interior volume in at least an open position, where the poppet is spaced apart from the top plate to allow flow through the one or more axisymmetrically disposed openings of the top plate, and the closed position.
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公开(公告)号：US11199267B2
公开(公告)日：2021-12-14
申请号：US16542798
申请日：2019-08-16
Applicant: APPLIED MATERIALS, INC.
Inventor： Andrew Nguyen , Yogananda Sarode Vishwanath , Xue Chang , Anilkumar Rayaroth , Chetan Naik , Balachandra Jatak Narayan
Abstract: Embodiments of symmetric flow valves for use in a substrate processing chamber are provided herein. In some embodiments, a symmetric flow valve includes a valve body having sidewalls, a bottom plate, and a top plate that together define an interior volume, wherein the top plate includes one or more axisymmetrically disposed openings; a poppet disposed in the interior volume, wherein the poppet includes a central opening and a plurality of portions configured to selectively seal the one or more axisymmetrically disposed openings of the top plate when the symmetric flow valve is in a closed position; and a first actuator coupled to the poppet to position the poppet within the interior volume in at least an open position, where the poppet is spaced apart from the top plate to allow flow through the one or more axisymmetrically disposed openings of the top plate, and the closed position.
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公开(公告)号：US11835146B2
公开(公告)日：2023-12-05
申请号：US17539372
申请日：2021-12-01
Applicant: Applied Materials, Inc.
Inventor： Andrew Nguyen , Yogananda Sarode Vishwanath , Xue Chang , Anilkumar Rayaroth , Chetan Naik , Balachandra Jatak Narayan
CPC classification number: F16K1/42 , F16K1/36 , F16K11/22 , F16K51/02 , Y10T137/87877
Abstract: Embodiments of symmetric flow valves for use in a substrate processing chamber are provided herein. In some embodiments, a symmetric flow valve includes a valve body having sidewalls, a bottom plate, and a top plate that together define an interior volume, wherein the top plate includes one or more axisymmetrically disposed openings; a poppet disposed in the interior volume, wherein the poppet includes a central opening and a plurality of portions configured to selectively seal the one or more axisymmetrically disposed openings of the top plate when the symmetric flow valve is in a closed position; and a first actuator coupled to the poppet to position the poppet within the interior volume in at least an open position, where the poppet is spaced apart from the top plate to allow flow through the one or more axisymmetrically disposed openings of the top plate, and the closed position.
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公开(公告)号：US11447868B2
公开(公告)日：2022-09-20
申请号：US15606739
申请日：2017-05-26
Applicant: Applied Materials, Inc.
Inventor： Andrew Nguyen , Kartik Ramaswamy , Michael G. Chafin , Yang Yang , Anilkumar Rayaroth , Lu Liu
IPC: C23C16/46 , C23C16/458 , C23C16/48 , H01J37/32
Abstract: Embodiments of the disclosure relate to apparatus and method for a tunable plasma process within a plasma processing chamber. In one embodiment of the disclosure, a heater assembly for a plasma processing chamber is disclosed. The heater assembly includes a resistive heating element, a first lead coupling the resistive heating element to an RF filter and a tunable circuit element operable to adjust an impedance between the resistive heating element and the RF filter. Another embodiment provides a method for controlling a plasma process in a plasma processing chamber by forming a plasma from a process gas present inside the plasma processing chamber and adjusting an impedance between a resistive heating element and an RF filter coupled between the resistive heating element and a power source for the resistive heating element, while the plasma is present in the plasma processing chamber.
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