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公开(公告)号:US20230348290A1
公开(公告)日:2023-11-02
申请号:US18217386
申请日:2023-06-30
Applicant: Applied Materials, Inc.
Inventor: Christopher Laurent Beaudry , Vahid Firouzdor , Joseph Frederick Sommers , Trevor Edward Wilantewicz , Hyun-Ho Doh , Joseph Frederick Behnke
CPC classification number: C01F17/34 , C23C14/08 , C23C4/134 , C23C4/11 , C23C14/221 , Y10T428/12667
Abstract: Described herein is a plasma resistant protective coating composition and bulk composition that provides enhanced erosion and corrosion resistance upon the coating composition's or the bulk composition's exposure to harsh chemical environment (such as hydrogen based and/or halogen based chemistries) and/or upon the coating composition's or the bulk composition's exposure to high energy plasma. Also described herein is a method of coating an article with a plasma resistant protective coating using electronic beam ion assisted deposition, physical vapor deposition, or plasma spray. Also described herein is a method of processing wafer, which method exhibits a reduced number of yttrium based particles.
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公开(公告)号:US11209478B2
公开(公告)日:2021-12-28
申请号:US15944688
申请日:2018-04-03
Applicant: APPLIED MATERIALS, INC.
Inventor: Sathyendra Ghantasala , Hyun-Ho Doh
IPC: G01R31/28 , G01R19/00 , H04B17/10 , H01L21/3065
Abstract: A system for verifying the operation of RF generators and resulting pulse waveforms in semiconductor processes includes a process chamber, a profile sensor, an optical sensor and a controller. A process implemented by the controller of the system for verifying the operation of RF generators and resulting pulse waveforms in semiconductor processes includes generating a pulse profile of a pulse shape of an RF generator under test, selecting a stored, representative profile of an RF generator known to be operating correctly to compare to the profile generated for the RF generator for a same pulse mode, defining a quantitative metric/control limit to identify similarities and/or differences between pulses of same pulse modes between the generated profile of the RF generator and the stored profile, comparing the generated profile and the selected stored profile, and determining if the RF generator under test is operating properly based on the comparison.
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公开(公告)号:US20230160055A1
公开(公告)日:2023-05-25
申请号:US18089807
申请日:2022-12-28
Applicant: APPLIED MATERIALS, INC.
Inventor: Vahid Firouzdor , Christopher Laurent Beaudry , Hyun-Ho Doh , Joseph Frederick Behnke , Joseph Frederick Sommers
IPC: C23C14/08 , H01J37/32 , C23C4/134 , C23C14/00 , H01L21/67 , C23C14/22 , C04B35/486 , C04B35/505 , C04B35/622 , C04B35/111
CPC classification number: C23C14/083 , H01J37/32495 , C23C4/134 , C23C14/0052 , H01L21/67213 , C23C14/221 , C04B35/486 , C04B35/505 , C04B35/62222 , C23C14/081 , C04B35/111
Abstract: Described herein is a protective coating composition that provides erosion and corrosion resistance to a coated article (such as a chamber component) upon the article's exposure to harsh chemical environment (such as hydrogen based and/or halogen based environment) and/or upon the article's exposure to high energy plasma. Also described herein is a method of coating an article with the protective coating using electronic beam ion assisted deposition, physical vapor deposition, or plasma spray. Also described herein is a method of processing wafer, which method exhibits, on average, less than about 5 yttrium based particle defects per wafer.
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公开(公告)号:US10607815B2
公开(公告)日:2020-03-31
申请号:US16023963
申请日:2018-06-29
Applicant: Applied Materials, Inc.
Inventor: Sathyendra Ghantasala , Hyun-Ho Doh , Vijayakumar C. Venugopal
Abstract: Methods of operating and assembling a plasma chamber are disclosed. An operating method includes tuning a match network of a plasma chamber while running a non-plasma discharge recipe. A hardware impedance of the plasma chamber is calculated from the match network settings from the tuning. A match loss for the plasma chamber is also calculated according to match network settings. A radio frequency (RF) power setting for the first plasma chamber is set according to the calculated hardware impedance and the calculated match loss. Such methods can be utilized to provide chamber-to-chamber performance matching across different plasma chambers. Certain disclosed methods of operating the plasma chamber can be utilized to identify hardware faults during operation and/or assembly processes.
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公开(公告)号:US20180138015A1
公开(公告)日:2018-05-17
申请号:US15349139
申请日:2016-11-11
Applicant: APPLIED MATERIALS, INC.
Inventor: Sathyendra K. Ghantasala , Vijayakumar C. Venugopal , Hyun-Ho Doh
CPC classification number: H01J37/32082 , G01R27/04 , H01J37/32935 , H01J2237/334
Abstract: A method of assigning faults to a processing chamber is described. Some embodiments include applying a radio frequency (RF) signal to a processing chamber to stimulate resonance in the chamber, measuring resonances of the applied RF signal in the chamber, extracting a fingerprint from the measured resonances, comparing the extracted fingerprint to a library of fingerprints, assigning a similarity index to combinations of the extracted fingerprint with at least one fingerprint in the fingerprint library, comparing each similarity index to a threshold, and if the similarity is greater than a threshold, then assigning a fault to the processing chamber using the library fingerprint.
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公开(公告)号:US11661650B2
公开(公告)日:2023-05-30
申请号:US16845207
申请日:2020-04-10
Applicant: APPLIED MATERIALS, INC.
Inventor: Vahid Firouzdor , Christopher Laurent Beaudry , Hyun-Ho Doh , Joseph Frederick Behnke , Joseph Frederick Sommers
IPC: C23C14/08 , C04B35/505 , C04B35/111 , H01L21/67 , H01J37/32 , C23C4/134 , C23C14/00 , C23C14/22 , C04B35/486 , C04B35/622
CPC classification number: C23C14/083 , C04B35/111 , C04B35/486 , C04B35/505 , C04B35/62222 , C23C4/134 , C23C14/0052 , C23C14/081 , C23C14/221 , H01J37/32495 , H01L21/67213
Abstract: Described herein is a protective coating composition that provides erosion and corrosion resistance to a coated article (such as a chamber component) upon the article's exposure to harsh chemical environment (such as hydrogen based and/or halogen based environment) and/or upon the article's exposure to high energy plasma. Also described herein is a method of coating an article with the protective coating using electronic beam ion assisted deposition, physical vapor deposition, or plasma spray. Also described herein is a method of processing wafer, which method exhibits, on average, less than about 5 yttrium based particle defects per wafer.
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公开(公告)号:US20210317564A1
公开(公告)日:2021-10-14
申请号:US16845207
申请日:2020-04-10
Applicant: APPLIED MATERIALS, INC.
Inventor: Vahid Firouzdor , Christopher Laurent Beaudry , Hyun-Ho Doh , Joseph Frederick Behnke , Joseph Frederick Sommers
IPC: C23C14/08 , H01J37/32 , C23C4/134 , C23C14/00 , C23C14/22 , C04B35/486 , C04B35/505 , C04B35/622 , H01L21/67
Abstract: Described herein is a protective coating composition that provides erosion and corrosion resistance to a coated article (such as a chamber component) upon the article's exposure to harsh chemical environment (such as hydrogen based and/or halogen based environment) and/or upon the article's exposure to high energy plasma. Also described herein is a method of coating an article with the protective coating using electronic beam ion assisted deposition, physical vapor deposition, or plasma spray. Also described herein is a method of processing wafer, which method exhibits, on average, less than about 5 yttrium based particle defects per wafer.
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公开(公告)号:US10553397B2
公开(公告)日:2020-02-04
申请号:US16365424
申请日:2019-03-26
Applicant: Applied Materials, Inc.
Inventor: Sathyendra K. Ghantasala , Vijayakumar C. Venugopal , Hyun-Ho Doh
Abstract: A method of assigning faults to a processing chamber is described. Some embodiments include applying a radio frequency (RF) signal to a processing chamber to stimulate resonance in the chamber, measuring resonances of the applied RF signal in the chamber, extracting a fingerprint from the measured resonances, comparing the extracted fingerprint to a library of fingerprints, assigning a similarity index to combinations of the extracted fingerprint with at least one fingerprint in the fingerprint library, comparing each similarity index to a threshold, and if the similarity is greater than a threshold, then assigning a fault to the processing chamber using the library fingerprint.
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公开(公告)号:US10283320B2
公开(公告)日:2019-05-07
申请号:US15349139
申请日:2016-11-11
Applicant: APPLIED MATERIALS, INC.
Inventor: Sathyendra K. Ghantasala , Vijayakumar C. Venugopal , Hyun-Ho Doh
Abstract: A method of assigning faults to a processing chamber is described. Some embodiments include applying a radio frequency (RF) signal to a processing chamber to stimulate resonance in the chamber, measuring resonances of the applied RF signal in the chamber, extracting a fingerprint from the measured resonances, comparing the extracted fingerprint to a library of fingerprints, assigning a similarity index to combinations of the extracted fingerprint with at least one fingerprint in the fingerprint library, comparing each similarity index to a threshold, and if the similarity is greater than a threshold, then assigning a fault to the processing chamber using the library fingerprint.
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公开(公告)号:US11920234B2
公开(公告)日:2024-03-05
申请号:US18089807
申请日:2022-12-28
Applicant: APPLIED MATERIALS, INC.
Inventor: Vahid Firouzdor , Christopher Laurent Beaudry , Hyun-Ho Doh , Joseph Frederick Behnke , Joseph Frederick Sommers
IPC: H01L21/67 , C04B35/111 , C04B35/486 , C04B35/505 , C04B35/622 , C23C4/134 , C23C14/00 , C23C14/08 , C23C14/22 , H01J37/32
CPC classification number: C23C14/083 , C04B35/111 , C04B35/486 , C04B35/505 , C04B35/62222 , C23C4/134 , C23C14/0052 , C23C14/081 , C23C14/221 , H01J37/32495 , H01L21/67213
Abstract: Described herein is a protective coating composition that provides erosion and corrosion resistance to a coated article (such as a chamber component) upon the article's exposure to harsh chemical environment (such as hydrogen based and/or halogen based environment) and/or upon the article's exposure to high energy plasma. Also described herein is a method of coating an article with the protective coating using electronic beam ion assisted deposition, physical vapor deposition, or plasma spray. Also described herein is a method of processing wafer, which method exhibits, on average, less than about 5 yttrium based particle defects per wafer.
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