公开(公告)号：US20230187276A1

公开(公告)日：2023-06-15

申请号：US18108338

申请日：2023-02-10

Applicant: APPLIED MATERIALS, INC.

Inventor： Shi YOU ,  He REN ,  Naomi YOSHIDA ,  Nikolaos BEKIARIS ,  Mehul NAIK ,  Jay Martin SEAMONS ,  Jingmei LIANG ,  Mei-Yee SHEK

IPC: H01L21/768 ,  H01L21/02 ,  H01L21/67

CPC classification number: H01L21/76837 ,  H01L21/76828 ,  H01L21/76826 ,  H01L21/02337 ,  H01L21/76825 ,  H01L21/02323 ,  H01L21/76834 ,  H01L21/67103 ,  H01L21/02326

Abstract: Embodiments herein provide for oxygen based treatment of low-k dielectric layers deposited using a flowable chemical vapor deposition (FCVD) process. Oxygen based treatment of the FCVD deposited low-k dielectric layers desirably increases the Ebd to capacitance and reliability of the devices while removing voids. Embodiments include methods and apparatus for making a semiconductor device including: etching a metal layer disposed atop a substrate to form one or more metal lines having a top surface, a first side, and a second side; depositing a passivation layer atop the top surface, the first side, and the second side under conditions sufficient to reduce or eliminate oxygen contact with the one or more metal lines; depositing a flowable layer of low-k dielectric material atop the passivation layer in a thickness sufficient to cover the one or more metal lines; and contacting the flowable layer of low-k dielectric material with oxygen under conditions sufficient to anneal and increase a density of the low-k dielectric material