公开(公告)号：US10037883B2

公开(公告)日：2018-07-31

申请号：US14182970

申请日：2014-02-18

Applicant: Applied Materials, Inc.

Inventor： Robert Chebi ,  Alfredo Granados ,  Zhao H. Ceng ,  Jianqi Wang ,  Rajan Balesan

IPC: H01L21/02 ,  H01L21/67 ,  H01J37/32

CPC classification number: H01L21/02118 ,  H01J37/321 ,  H01J37/32119 ,  H01J37/32522 ,  H01L21/67109

Abstract: Embodiments described herein generally relate to an apparatus and methods for reducing the deposition of polymers in a semiconductor processing chamber. A heater jacket and heat sources are provided and may be configured to maintain a uniform temperature profile of the processing chamber. A method of maintaining a uniform temperature profile of a dielectric ceiling of the processing chamber is also provided.

公开(公告)号：US09673069B2

公开(公告)日：2017-06-06

申请号：US13945756

申请日：2013-07-18

Applicant: APPLIED MATERIALS, INC.

Inventor： Yuri Trachuk ,  Robert Chebi ,  Carl Almgren

IPC: C23C16/00 ,  C23F1/00 ,  H01L21/306 ,  H01L21/67 ,  H05H1/46 ,  H01J37/32 ,  H01L21/3065

CPC classification number: H01L21/67069 ,  H01J37/321 ,  H01J37/32174 ,  H01L21/3065 ,  H05H1/46 ,  H05H2001/4682

Abstract: A plasma-assisted etch process for the manufacture of semiconductor or MEMS devices employs an RF source to generate a plasma that is terminated through an electrode. The termination is designed as a “short” at the frequency of the RF source to minimize voltage fluctuations on the electrode due to the RF source energy. The electrode voltage potential can then be accurately controlled with a bias source, resulting in improved control of etch depth of a semiconductor substrate disposed on the electrode.

公开(公告)号：US20140162462A1

公开(公告)日：2014-06-12

申请号：US13945756

申请日：2013-07-18

Applicant: APPLIED MATERIALS INC.

Inventor： Yuri Trachuck ,  Robert Chebi ,  Carl Almgren

IPC: H01L21/67 ,  H01L21/3065

CPC classification number: H01L21/67069 ,  H01J37/321 ,  H01J37/32174 ,  H01L21/3065 ,  H05H1/46 ,  H05H2001/4682

Abstract: A plasma-assisted etch process for the manufacture of semiconductor or MEMS devices employs an RF source to generate a plasma that is terminated through an electrode. The termination is designed as a “short” at the frequency of the RF source to minimize voltage fluctuations on the electrode due to the RF source energy. The electrode voltage potential can then be accurately controlled with a bias source, resulting in improved control of etch depth of a semiconductor substrate disposed on the electrode.

Abstract translation: 用于制造半导体或MEMS器件的等离子体辅助蚀刻工艺采用RF源来产生通过电极终止的等离子体。 终端设计为RF源的“短路”，以使由于RF源能量导致的电极上的电压波动最小化。 然后可以利用偏压源来精确地控制电极电压电位，从而改善对设置在电极上的半导体衬底的蚀刻深度的控制。