公开(公告)号：US09673069B2

公开(公告)日：2017-06-06

申请号：US13945756

申请日：2013-07-18

Applicant: APPLIED MATERIALS, INC.

Inventor： Yuri Trachuk ,  Robert Chebi ,  Carl Almgren

IPC: C23C16/00 ,  C23F1/00 ,  H01L21/306 ,  H01L21/67 ,  H05H1/46 ,  H01J37/32 ,  H01L21/3065

CPC classification number: H01L21/67069 ,  H01J37/321 ,  H01J37/32174 ,  H01L21/3065 ,  H05H1/46 ,  H05H2001/4682

Abstract: A plasma-assisted etch process for the manufacture of semiconductor or MEMS devices employs an RF source to generate a plasma that is terminated through an electrode. The termination is designed as a “short” at the frequency of the RF source to minimize voltage fluctuations on the electrode due to the RF source energy. The electrode voltage potential can then be accurately controlled with a bias source, resulting in improved control of etch depth of a semiconductor substrate disposed on the electrode.