公开(公告)号：US10553398B2

公开(公告)日：2020-02-04

申请号：US14463205

申请日：2014-08-19

Applicant: APPLIED MATERIALS, INC.

Inventor： Samer Banna ,  Tza-Jing Gung ,  Vladimir Knyazik ,  Kyle Tantiwong ,  Dan A. Marohl ,  Valentin N. Todorow ,  Stephen Yuen

IPC: H01J37/32

Abstract: Embodiments of inductively coupled plasma (ICP) reactors are provided herein. In some embodiments, a dielectric window for an inductively coupled plasma reactor includes: a body including a first side, a second side opposite the first side, an edge, and a center, wherein the dielectric window has a dielectric coefficient that varies spatially. In some embodiments, an apparatus for processing a substrate includes: a process chamber having a processing volume disposed beneath a lid of the process chamber; and one or more inductive coils disposed above the lid to inductively couple RF energy into and to form a plasma in the processing volume above a substrate support disposed within the processing volume; wherein the lid is a dielectric window comprising a first side and an opposing second side that faces the processing volume, and wherein the lid has a dielectric coefficient that spatially varies to provide a varied power coupling of RF energy from the one or more inductive coils to the processing volume.

公开(公告)号：US10083816B2

公开(公告)日：2018-09-25

申请号：US15149923

申请日：2016-05-09

Applicant: Applied Materials, Inc.

Inventor： Michael D. Willwerth ,  David Palagashvili ,  Valentin N. Todorow ,  Stephen Yuen

IPC: B44C1/22 ,  C03C15/00 ,  C03C25/68 ,  C23F1/00 ,  H01J37/32 ,  H05B6/10 ,  H01L21/67 ,  C23C14/22 ,  C23C16/44 ,  H01F21/12 ,  H05B6/02

CPC classification number: H01J37/321 ,  C23C14/22 ,  C23C16/44 ,  H01F21/12 ,  H01J37/32321 ,  H01J37/32522 ,  H01J37/32623 ,  H01J37/32935 ,  H01J2237/327 ,  H01J2237/334 ,  H01L21/67017 ,  H01L21/67069 ,  H05B6/02 ,  H05B6/108

Abstract: A shielded lid heater lid heater suitable for use with a plasma processing chamber, a plasma processing chamber having a shielded lid heater and a method for plasma processing are provided. The method and apparatus enhances positional control of plasma location within a plasma processing chamber, and may be utilized in etch, deposition, implant, and thermal processing systems, among other applications where the control of plasma location is desirable. In one embodiment, a process for tuning a plasma processing chamber is provided that include determining a position of a plasma within the processing chamber, selecting an inductance and/or position of an inductor coil coupled to a lid heater that shifts the plasma location from the determined position to a target position, and plasma processing a substrate with the inductor coil having the selected inductance and/or position.