公开(公告)号：US11322337B2

公开(公告)日：2022-05-03

申请号：US15594297

申请日：2017-05-12

Applicant: APPLIED MATERIALS, INC.

Inventor： Dmitry Lubomirsky ,  Son T. Nguyen ,  Anh N. Nguyen ,  David Palagashvili

IPC: H01J37/32 ,  H01L21/67 ,  H01L21/687

Abstract: A workpiece carrier is described for a plasma processing chamber that has isolated heater plate blocks. In one example, a plasma processing system has a plasma chamber, a plasma source electrically coupled with a showerhead included within the plasma chamber, a workpiece holder in a processing region of the plasma chamber having a puck to carry a workpiece, wherein the workpiece holder includes a heater plate having a plurality of thermally isolated blocks each thermally coupled to the puck, wherein each block includes a heater to heat a respective block of the heater plate, and wherein the workpiece holder includes a cooling plate fastened to and thermally coupled to the heater plate, the cooling plate defining a cooling channel configured to distribute a heat transfer fluid to transfer heat from the cooling plate, and a temperature controller to independently control each heater.

公开(公告)号：US09070536B2

公开(公告)日：2015-06-30

申请号：US13632306

申请日：2012-10-01

Applicant: APPLIED MATERIALS, INC.

Inventor： Michael D. Willwerth ,  David Palagashvili ,  Michael G. Chafin ,  Ying-Sheng Lin

IPC: B23K9/02 ,  H01J37/32

CPC classification number: H01J37/321 ,  H01J37/32642 ,  H01J37/32715 ,  H01J37/32724

Abstract: Undesirable heating of a semiconductor process ring is prevented by thermally isolating the process ring from the insulating puck of an electrostatic chuck, and providing a thermally conductive and electrically insulating thermal ring contacting both the semiconductor process ring and an underlying metal base having internal coolant flow passages.

Abstract translation: 通过将工艺环与静电卡盘的绝缘圆盘热隔离，并且提供与半导体工艺环和下面的金属基座接触的导热和电绝缘的热环来防止半导体工艺环的不希望的加热，其具有内部冷却剂流动通道 。

公开(公告)号：US11302520B2

公开(公告)日：2022-04-12

申请号：US14747367

申请日：2015-06-23

Applicant: Applied Materials, Inc.

Inventor： Tien Fak Tan ,  Dmitry Lubomirsky ,  Kirby H. Floyd ,  Son T. Nguyen ,  David Palagashvili ,  Alexander Tam ,  Shaofeng Chen

IPC: H01J37/32

Abstract: Implementations of the disclosure generally provide an improved pedestal heater for a processing chamber. The pedestal heater includes a temperature-controlled plate having a first surface and a second surface opposing the first surface. The temperature-controlled plate includes an inner zone comprising a first set of heating elements, an outer zone comprising a second set of heating elements, the outer zone surrounding the inner zone, and a continuous thermal choke disposed between the inner zone and the outer zone, and a substrate receiving plate having a first surface and a second surface opposing the first surface, the second surface of the substrate receiving plate is coupled to the first surface of the temperature-controlled plate. The continuous thermal choke enables a very small temperature gradient to be created and manipulated between the inner zone and the outer zone, allowing center-fast or edge-fast etching profile to achieve on a surface of the substrate.

公开(公告)号：US20130277339A1

公开(公告)日：2013-10-24

申请号：US13632306

申请日：2012-10-01

Applicant: APPLIED MATERIALS, INC.

Inventor： Michael D. Willwerth ,  David Palagashvili ,  Michael G. Chafin ,  Ying-Sheng Lin

IPC: B23K10/00

CPC classification number: H01J37/321 ,  H01J37/32642 ,  H01J37/32715 ,  H01J37/32724

Abstract: Undesirable heating of a semiconductor process ring is prevented by thermally isolating the process ring from the insulating puck of an electrostatic chuck, and providing a thermally conductive and electrically insulating thermal ring contacting both the semiconductor process ring and an underlying metal base having internal coolant flow passages.

Abstract translation: 通过将工艺环与静电卡盘的绝缘圆盘热隔离，并且提供与半导体工艺环和下面的金属基座接触的导热和电绝缘的热环来防止半导体工艺环的不希望的加热，其具有内部冷却剂流动通道 。

公开(公告)号：US10083816B2

公开(公告)日：2018-09-25

申请号：US15149923

申请日：2016-05-09

Applicant: Applied Materials, Inc.

Inventor： Michael D. Willwerth ,  David Palagashvili ,  Valentin N. Todorow ,  Stephen Yuen

IPC: B44C1/22 ,  C03C15/00 ,  C03C25/68 ,  C23F1/00 ,  H01J37/32 ,  H05B6/10 ,  H01L21/67 ,  C23C14/22 ,  C23C16/44 ,  H01F21/12 ,  H05B6/02

CPC classification number: H01J37/321 ,  C23C14/22 ,  C23C16/44 ,  H01F21/12 ,  H01J37/32321 ,  H01J37/32522 ,  H01J37/32623 ,  H01J37/32935 ,  H01J2237/327 ,  H01J2237/334 ,  H01L21/67017 ,  H01L21/67069 ,  H05B6/02 ,  H05B6/108

Abstract: A shielded lid heater lid heater suitable for use with a plasma processing chamber, a plasma processing chamber having a shielded lid heater and a method for plasma processing are provided. The method and apparatus enhances positional control of plasma location within a plasma processing chamber, and may be utilized in etch, deposition, implant, and thermal processing systems, among other applications where the control of plasma location is desirable. In one embodiment, a process for tuning a plasma processing chamber is provided that include determining a position of a plasma within the processing chamber, selecting an inductance and/or position of an inductor coil coupled to a lid heater that shifts the plasma location from the determined position to a target position, and plasma processing a substrate with the inductor coil having the selected inductance and/or position.

公开(公告)号：US09639097B2

公开(公告)日：2017-05-02

申请号：US14497253

申请日：2014-09-25

Applicant: Applied Materials, Inc.

Inventor： Chetan Mahadeswaraswamy ,  Kartik Ramaswamy ,  Bryan Liao ,  Sergio Shoji ,  Duy D. Nguyen ,  Hamid Noorbakhsh ,  David Palagashvili

IPC: G06F19/00 ,  G05D23/19 ,  H01J37/32 ,  H01L21/67 ,  G05B15/02

CPC classification number: G05D23/19 ,  G05B15/02 ,  H01J37/32522 ,  H01J37/32724 ,  H01J37/32908 ,  H01J37/3299 ,  H01L21/67248

Abstract: Methods and systems for controlling temperatures in plasma processing chamber for a wide range of setpoint temperatures and reduced energy consumption. Temperature control is coordinated between a coolant liquid loop and a heat source by a control algorithm implemented by the plasma processing module controller. The control algorithm may completely stop the flow of coolant liquid to a temperature-controlled component in response to a feedback signal indicating an actual temperature is below the setpoint temperature. The control algorithm may further be based at least in part on a feedforward control signal derived from a plasma power or change in plasma power input into the processing chamber during process recipe execution.