公开(公告)号：US20210408089A1

公开(公告)日：2021-12-30

申请号：US17470178

申请日：2021-09-09

Applicant: ARGO AI, LLC

Inventor： Mark Allen ITZLER ,  Brian PICCIONE ,  Xudong JIANG ,  Krystyna SLOMKOWSKI

IPC: H01L27/144 ,  H01L31/107 ,  H01L31/02 ,  G01J1/44

Abstract: A GmAPD FPA having increased tolerance optical overstress includes a limit resistor that is monolithically integrated into each pixel in the FPA, and which limits the magnitude of the current entering the read out integrated circuit.

公开(公告)号：US20180358391A1

公开(公告)日：2018-12-13

申请号：US16002816

申请日：2018-06-07

Applicant: ARGO AI, LLC

Inventor： Mark Allen ITZLER ,  Brian PICCIONE ,  Xudong JIANG ,  Krystyna SLOMKOWSKI

IPC: H01L27/144 ,  H01L31/107 ,  H01L31/02 ,  G01J1/44 ,  H01C7/00

CPC classification number: H01L27/1446 ,  G01J1/44 ,  G01J2001/4466 ,  G01J2001/448 ,  H01C7/006 ,  H01L27/14609 ,  H01L31/02027 ,  H01L31/107

Abstract: A GmAPD FPA having increased tolerance optical overstress includes a limit resistor that is monolithically integrated into each pixel in the FPA, and which limits the magnitude of the current entering the read out integrated circuit.

公开(公告)号：US20220165782A1

公开(公告)日：2022-05-26

申请号：US17670176

申请日：2022-02-11

Applicant: ARGO AI, LLC

Inventor： Brian PICCIONE ,  Mark ITZLER ,  Xudong JIANG ,  Krystyna SLOMKOWSKI ,  Harold Y. HWANG ,  John L. HOSTETLER

IPC: H01L27/146

Abstract: Devices, systems, and methods are provided for reducing electrical and optical crosstalk in photodiodes. A photodiode may include a first layer with passive material, the passive material having no electric field. The photodiode may include a second layer with an absorbing material, the second layer above the first layer. The photodiode may include a diffused region with a buried p-n junction. The photodiode may include an active region with the buried p-n junction and having an electric field greater than zero. The photodiode may include a plateau structure based on etching through the second layer to the first layer, the etching performed at a distance of fifteen microns or less from the buried p-n junction.

公开(公告)号：US20220149086A1

公开(公告)日：2022-05-12

申请号：US17581464

申请日：2022-01-21

Applicant: ARGO AI, LLC

Inventor： Mark Allen ITZLER ,  Brian PICCIONE ,  Xudong JIANG ,  Krystyna SLOMKOWSKI

IPC: H01L27/144 ,  H01L31/107 ,  H01L31/02 ,  G01J1/44

Abstract: A GmAPD FPA having increased tolerance optical overstress includes a limit resistor that is monolithically integrated into each pixel in the FPA, and which limits the magnitude of the current entering the read out integrated circuit.