公开(公告)号：US20240150898A1

公开(公告)日：2024-05-09

申请号：US18386481

申请日：2023-11-02

Applicant: ASM IP Holding B.V.

Inventor： Yoshiyuki Kikuchi ,  Hirotsugu Sugiura ,  Alexey Remnev ,  Koei Aida ,  Lingjun Xue

IPC: C23C16/458 ,  H01J37/32

CPC classification number: C23C16/4585 ,  H01J37/32715 ,  H01J37/32743 ,  H01J2237/3321 ,  H01J2237/3323

Abstract: A substrate processing apparatus is provided. A substrate processing apparatus comprises a reaction chamber provided with a chamber wall comprising a first sidewall, a second sidewall disposed opposite to the first sidewall, a bottom wall connected to the first sidewall and the second sidewall; a gate valve tunnel disposed in the first sidewall configured to be closed by a gate valve; a substrate support provided with a top plate and a shaft, the substrate support being disposed within the reaction chamber and configured to support a substrate on the top plate, wherein the substrate support is configured to be vertically movable between a process position and a transfer position; and a liner disposed around perimeter of the substrate support and configured to move with the substrate support, wherein an outer wall of the liner is configured to cover the gate valve tunnel when the substrate support is in the process position.

公开(公告)号：US20250104999A1

公开(公告)日：2025-03-27

申请号：US18894170

申请日：2024-09-24

Applicant: ASM IP Holding B.V.

Inventor： Alexey Remnev ,  Takahiro Kawashima ,  Frank Wilson Amalraj ,  Tamal Saha

IPC: H01L21/02 ,  C23C16/505 ,  C23C16/56 ,  H01L21/311

Abstract: A method of filling trenches on a surface of a substrate is provided. The method may comprise comprises the steps of providing a substrate within a reaction chamber, the substrate comprising a plurality of narrow trenches and wide trenches formed on a surface of the substrate; a 1st deposition step comprising: (a) flowing a carbon precursor into the reaction chamber; and (b) exposing the carbon precursor to a plasma, wherein the carbon precursor reacts to form a first deposited material; (c) exposing the first deposited material to a post-deposition treatment to cause the first deposited material to flow within the trenches; (d) etching the first deposited material, wherein the first deposited material is substantially level in the narrow trenches and recessed in the wide trenches; and a 2nd deposition step comprising: (e) flowing the carbon precursor with the carrier gas into the reaction chamber; and (f) exposing the carbon precursor to a plasma, wherein the carbon precursor reacts to form a second deposited material on the first deposited material.

公开(公告)号：US20250037994A1

公开(公告)日：2025-01-30

申请号：US18782382

申请日：2024-07-24

Applicant: ASM IP Holding B.V.

Inventor： Yoshio Susa ,  Hirotsugu Sugiura ,  Yoshiyuki Kikuchi ,  Abhudaya Mishra ,  Alexey Remnev

IPC: H01L21/02 ,  H01J37/32

Abstract: A method of filling trenches on a surface of a substrate is provided. The method may comprise the steps of: positioning a substrate on a substrate support, the substrate support disposed within a reaction chamber, wherein a pressure of the reaction chamber is less than 200 Pa; flowing a carbon precursor into the reaction chamber continuously; flowing an etching gas into the reaction chamber continuously; generating a plasma in the reaction chamber by applying a first radio frequency (RF) power to one of one or more electrodes of the reaction chamber; and depositing an amorphous carbon layer in the trenches on the substrate.