METHOD FOR FORMING CARBON FILM AND FILM FORMING APPARATUS

    公开(公告)号:US20240011151A1

    公开(公告)日:2024-01-11

    申请号:US18217685

    申请日:2023-07-03

    CPC classification number: C23C16/26 C23C16/045 H01L21/31116

    Abstract: A method for forming a carbon film on inner wall surfaces of a plurality of trenches which are formed on a substrate to be processed includes a depositing step of depositing the carbon film on the inner wall surfaces of the trenches of the substrate to be processed by supplying a mixed gas containing a carbon precursor gas and a carrier gas and applying a high frequency voltage to the mixed gas to generate plasma, an interval step of stopping the supply of the carbon precursor gas and the application of the high frequency voltage while continuing the supply of the carrier gas, and an etching step of etching a part of the carbon film by continuing to supply the carrier gas and applying a high frequency voltage to the carrier gas to generate plasma, wherein the above steps are repeated in the above order.

    METHODS OF FILLING TRENCHES ON SUBSTRATE SURFACE

    公开(公告)号:US20250037994A1

    公开(公告)日:2025-01-30

    申请号:US18782382

    申请日:2024-07-24

    Abstract: A method of filling trenches on a surface of a substrate is provided. The method may comprise the steps of: positioning a substrate on a substrate support, the substrate support disposed within a reaction chamber, wherein a pressure of the reaction chamber is less than 200 Pa; flowing a carbon precursor into the reaction chamber continuously; flowing an etching gas into the reaction chamber continuously; generating a plasma in the reaction chamber by applying a first radio frequency (RF) power to one of one or more electrodes of the reaction chamber; and depositing an amorphous carbon layer in the trenches on the substrate.

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