公开(公告)号：US20230091094A1

公开(公告)日：2023-03-23

申请号：US17900578

申请日：2022-08-31

Applicant: ASM IP Holding B.V.

Inventor： Hannu Huotari ,  Daniele Piumi ,  Yoann Tomczak ,  Ivan Zyulkov ,  Charles Dezelah ,  Arpita Saha ,  David de Roest ,  Jerome Innocent ,  Michael Givens ,  Monica Thukkaram

IPC: G03F7/11 ,  G03F7/16

Abstract: Methods of forming structures including a photoresist absorber layer and structures including the photoresist absorber layer are disclosed. Exemplary methods include forming the photoresist absorber layer that includes at least two elements having an EUV cross section (σα) of greater than 2×106 cm2/mol.

公开(公告)号：US20240191347A1

公开(公告)日：2024-06-13

申请号：US18535440

申请日：2023-12-11

Applicant: ASM IP Holding B.V.

Inventor： Monica Thukkaram ,  Aditya Chauhan ,  Andrea Illiberi ,  Vivek Koladi Mootheri ,  Leo Lukose ,  Alessandra Leonhardt ,  Michael Eugene Givens

IPC: C23C16/40 ,  C23C16/455

CPC classification number: C23C16/407 ,  C23C16/403 ,  C23C16/45527 ,  C23C16/45553

Abstract: Methods and related solids and systems are described. In some embodiments, methods as described herein can comprise executing a plurality of super cycles. Ones from the plurality of super cycles can comprise a magnesium sub cycle, an aluminum sub cycle, and a zinc sub cycle. At least one super cycle can comprise more than one magnesium sub cycle, aluminum sub cycle, or zinc sub cycle. Thus, layers having a tunable magnesium, aluminum, or zinc composition can be formed.

公开(公告)号：US20230077088A1

公开(公告)日：2023-03-09

申请号：US17900065

申请日：2022-08-31

Applicant: ASM IP Holding B.V.

Inventor： Arpita Saha ,  David de Roest ,  Michael Givens ,  Charles Dezelah ,  Monica Thukkaram ,  Daniele Piumi

IPC: G03F1/22

Abstract: Methods of forming structures including a photoresist absorber layer and structures including the absorber layer underlying an extreme ultraviolet (EUV) photoresist are disclosed. Exemplary methods include forming the photoresist absorber layer or underlayer with an oxide of a high atomic number (z) element having an EUV cross section (σα) of greater than 2×106 cm2/mol and then forming the EUV photoresist over the high-z underlayer.