公开(公告)号：US20250034701A1

公开(公告)日：2025-01-30

申请号：US18782198

申请日：2024-07-24

Applicant: ASM IP Holding B.V.

Inventor： Bo Yin ,  Fu Tang ,  Andrea Illiberi ,  Charles Dezelah

IPC: C23C16/40 ,  C23C16/455 ,  H01L21/02

Abstract: Method, system and apparatus for forming one or more metal oxide layers on a substrate is disclosed. An example method comprises a) providing a substrate in a reaction chamber, b) flowing a first precursor comprising zinc or gallium or a combination thereof and an oxygen species into the chamber to deposit a first oxide layer on a top surface of the substrate, c) flowing a second precursor into the chamber to deposit a second oxide layer on the first oxide layer wherein the second precursor comprises aluminum having at least one R ligand and at least one L ligand, wherein the R ligand is an alkyl ligand and wherein the R ligand and the L ligand are different and repeating steps b) or c) or a combination thereof until a desired thickness of the first oxide layer or the second oxide layer, or a combination thereof is achieved.