公开(公告)号：US20230260754A1

公开(公告)日：2023-08-17

申请号：US18107588

申请日：2023-02-09

Applicant: ASM IP Holding B.V.

Inventor： Doohan Kim ,  YongGyu Han ,  KiChul Um ,  DaeYoun Kim

IPC: H01J37/32 ,  H01G5/16

CPC classification number: H01J37/32183 ,  H01J37/32091 ,  H01G5/16 ,  H01J2237/024 ,  H01J2237/24564 ,  H01J2237/24585 ,  H01J2237/332

Abstract: A substrate processing method capable of performing a stable plasma process includes: supplying a source gas under a first plasma atmosphere using a substrate processing apparatus including a power generation unit, a first reactor, and a matching network between the power generation unit and the first reactor; purging the source gas; supplying a reaction gas under a second plasma atmosphere; and purging the reaction gas, wherein setting a variable capacitor included in the matching network to a first value is performed during the purging of the source gas, and setting the variable capacitor to a second value is performed during the purging of the reaction gas.